Patents by Inventor Wen Wen

Wen Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240169376
    Abstract: An approach is disclosed that receives an incoming data record, the data record including a number of data fields. The approach determines a current Real-Time Resources Score (RTRS). The RTRS being a forecast of the information handling system's ability to handle incoming data transmissions. When the RTRS is lower than a current data accumulation rate, a subset of the data record is sent based on field priorities. The approach assigns priorities to each of the data fields included in the data record based on a priority assessment of the respective data fields. The approach then sends, to a data receiver, a subset of the plurality of data fields based on the assigned priority.
    Type: Application
    Filed: November 23, 2022
    Publication date: May 23, 2024
    Inventors: LING MA, Cheng Fang Wang, Jing Yan ZZ Zhang, Bing Qian, Wen Wen Guo, Bo Chen Zhu
  • Patent number: 11989005
    Abstract: A system performs adaptive thermal ceiling control at runtime. The system includes computing circuits and a thermal management module. When detecting a runtime condition change that affects power consumption in the system, the thermal management module determines an adjustment to the thermal ceiling of a computing circuit, and increases the thermal ceiling of the computing circuit according to the adjustment.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: May 21, 2024
    Assignee: MediaTek Inc.
    Inventors: Bo-Jr Huang, Jia-Wei Fang, Jia-Ming Chen, Ya-Ting Chang, Chien-Yuan Lai, Cheng-Yuh Wu, Yi-Pin Lin, Wen-Wen Hsieh, Min-Shu Wang
  • Patent number: 11983109
    Abstract: An air freight rate data caching method and system. The method includes converting air freight rate data into a data format of a first-level cache, and storing same in the first-level cache; performing, on the basis of a flight origin city and a flight destination city, data fragmentation on the air freight rate data stored in the first-level cache so as to generate fragmented data; and storing the fragmented data, after same is validated, in a second-level cache. Each data node of the fragmented data cached in the second-level cache only includes part of the air freight rate data on which a fragmentation algorithm can be performed, and therefore, the horizontal expansion capacity of a cache system is improved relative to the case where cached data copies are all complete sets.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: May 14, 2024
    Assignee: TravelSky Technology Limited
    Inventors: Jinfang Du, Lingbin Meng, Wen Wen, Chunsheng Ju, Bing Liu, Yongbo Fei
  • Publication number: 20240152194
    Abstract: A power consumption reduction method can include defining y operation scenarios according to x types of extracted information, generating z power profiles each used for controlling power provided to a subset of a plurality of processors, assigning the z power profiles to the y operation scenarios in a machine learning model, collecting to-be-evaluated information by the plurality of processors, comparing the to-be-evaluated information with the x types of extracted information to find a most similar type of extracted information, using the machine learning model to select an optimal power profile from the z power profiles according to the most similar type of extracted information, and applying the optimal power profile to control the power provided to the subset of the plurality of processors. The subset of the plurality of processors are of the same type of processor. x, y and z can be an integer larger than zero.
    Type: Application
    Filed: August 18, 2023
    Publication date: May 9, 2024
    Applicant: MEDIATEK INC.
    Inventors: Wen-Wen Hsieh, Ying-Yi Teng, Chien-Chih Wang
  • Publication number: 20240126056
    Abstract: The present disclosure relates to a light energy collecting system and a detection apparatus. Some embodiments of the present disclosure provide a light energy collecting system and a detection apparatus, to correct chromatic aberration, simplify system structure, and improve system reliability and stability.
    Type: Application
    Filed: May 11, 2023
    Publication date: April 18, 2024
    Applicant: SUZHOU VDO BIOTECH CO., LTD.
    Inventors: Guohua Lu, Jingzhang Wu, Wen Wen
  • Publication number: 20240119200
    Abstract: A method of building a characteristic model includes: acquiring raw electrical data from a measurement system outside one or more processing units; acquiring operational state-related data from an information collector inside the one or more processing units; performing a data annealing process on the raw electrical data and the operational state-related data to obtain and purified electrical data and purified operational state-related data; and performing a machine learning (ML)-based process to build the characteristic model based on the purified electrical data and the purified operational state-related data.
    Type: Application
    Filed: October 3, 2023
    Publication date: April 11, 2024
    Applicant: MEDIATEK INC.
    Inventors: Yu-Jen Chen, Chien-Chih Wang, Wen-Wen Hsieh, Ying-Yi Teng
  • Patent number: 11901295
    Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: February 13, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Yi Wu, Li-Hsuan Chu, Ching-Wen Wen, Chia-Chun Hung, Chen Liang Chang, Chin-Szu Lee, Hsiang Liu
  • Patent number: 11882769
    Abstract: A magnetoresistive random access memory (MRAM) structure is provided in the present invention, including multiple MRAM cells, and an atomic layer deposition dielectric layer between and at outer sides of the MRAM cells, wherein the material of top electrode layer is titanium nitride, and the nitrogen percentage is greater than titanium percentage and further greater than oxygen percentage in the titanium nitride, and the nitrogen percentage gradually increases inward from the top surface of top electrode layer to a depth and then start to gradually decrease to a first level and then remains constant, and the titanium percentage gradually decreases inward from the top surface of top electrode layer to the depth and then start to gradually increase to a second level and then remains constant.
    Type: Grant
    Filed: April 25, 2021
    Date of Patent: January 23, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Bo-Yun Huang, Wen-Wen Zhang, Kun-Chen Ho
  • Publication number: 20230411489
    Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.
    Type: Application
    Filed: July 19, 2022
    Publication date: December 21, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Wen Zhang, Kun-Chen Ho, Chun-Lung Chen, Chung-Yi Chiu, Ming-Chou Lu
  • Publication number: 20230411213
    Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer on the CESL, forming a contact plug in the ILD layer and adjacent to the gate structure, forming a first stop layer on the ILD layer, and removing the first stop layer and the ILD layer around the gate structure to form an air gap exposing the CESL.
    Type: Application
    Filed: July 20, 2022
    Publication date: December 21, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Wen Zhang, Ming-Chou Lu, Kun-Chen Ho, Dien-Yang Lu, Chun-Lung Chen, Chung-Yi Chiu
  • Publication number: 20230297551
    Abstract: A system may port a data model into a strict schema system, translate the data model into a transformation rule definition, fit the transformation rule definition to a transform action, receive strict schema data, perform the transform action on the strict schema data based on the transformation rule definition to form rough data, and execute filtering and enriching operations on the rough data to form loose schema data.
    Type: Application
    Filed: March 15, 2022
    Publication date: September 21, 2023
    Inventors: Cheng Luo, Wen Wen Guo, Chu Yun Tong, Xiao Ming Hu, Miao Liu, YI XIN SONG
  • Publication number: 20230211532
    Abstract: A molding die includes a first mold assembly, a second mold assembly, and a mold core. The first and second mold assemblies are adapted to be clamped together. The mold core defines a molding groove. The molding core is pressed between the first and second mold assemblies to form a molding cavity. The second mold assembly includes a light transmitting area corresponding to the molding cavity, so that the molding cavity will receive incident light through the light transmitting area. In the molding die, the first mold assembly, the second mold assembly, and the mold core cooperate to form the molding cavity, adhesive is injected into the molding cavity, and the molding cavity receives incident light through the light transmitting area, so that curing efficiency of the adhesive is improved, production efficiency is high, shape of molded adhesive is uniform, and product quality is improved.
    Type: Application
    Filed: December 28, 2022
    Publication date: July 6, 2023
    Inventors: ZHI-QIANG CHEN, WEN-WEN HONG, HUA-ZHONG LIU, BING CHEN, XIANG-YONG LIU, YU-MEI ZHAO
  • Publication number: 20230131681
    Abstract: A computer-implemented method includes analyzing, by a processing unit, a relational database to discover a plurality of static relationships between a plurality of data fields captured in two or more tables. The processing unit can discover a plurality of entity relationships based on observing application-generated queries and results of accessing the relational database in response to one or more test triggers. The processing unit can build one or more relation graphs based on the static relationships and the entity relationships to link a plurality of nodes with one or more edges that define at least one relationship between the nodes. One or more class graphs are formed having a reduced number of edges than the one or more relation graphs. The processing unit can generate one or more result data graphs using the one or more class graphs as a graph database model of the relational database.
    Type: Application
    Filed: October 25, 2021
    Publication date: April 27, 2023
    Inventors: Chu Yun Tong, Cheng Luo, Xiao Ming Hu, Wen Wen Guo, Miao Liu, Yi Xin Song
  • Patent number: 11636111
    Abstract: A computer-implemented method includes analyzing, by a processing unit, a relational database to discover a plurality of static relationships between a plurality of data fields captured in two or more tables. The processing unit can discover a plurality of entity relationships based on observing application-generated queries and results of accessing the relational database in response to one or more test triggers. The processing unit can build one or more relation graphs based on the static relationships and the entity relationships to link a plurality of nodes with one or more edges that define at least one relationship between the nodes. One or more class graphs are formed having a reduced number of edges than the one or more relation graphs. The processing unit can generate one or more result data graphs using the one or more class graphs as a graph database model of the relational database.
    Type: Grant
    Filed: October 25, 2021
    Date of Patent: April 25, 2023
    Assignee: International Business Machines Corporation
    Inventors: Chu Yun Tong, Cheng Luo, Xiao Ming Hu, Wen Wen Guo, Miao Liu, Yi Xin Song
  • Patent number: 11604792
    Abstract: The invention discloses a method and a device for constructing a SQL statement based on reinforcement learning, wherein the method includes: initializing an actor-critic network parameter; acquiring a sequence pair of natural language and real SQL statement from a data set; inputting a natural language sequence into an actor network encoder, and inputting a real SQL sequence into a critic network encoder; using an encoded hidden state as an initialized hidden state of a corresponding decoder; gradually predicting, by an actor network decoder, a SQL statement action, and inputting the SQL statement action to a critic network decoder and an environment to obtain a corresponding reward; and using a gradient descent algorithm to update the network parameters, and obtaining a constructing model of the natural language to the SQL statement after repeated iteration training.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: March 14, 2023
    Assignee: GUANGDONG UNIVERSITY OF TECHNOLOGY
    Inventors: Ruichu Cai, Boyan Xu, Zhihao Liang, Zijian Li, Zhifeng Hao, Wen Wen, Bingfeng Chen
  • Publication number: 20230025163
    Abstract: A method of manufacturing a semiconductor structure including the following steps is provided. A substrate is provided. The substrate has a first region and a second region. A stacked structure is formed on the substrate in the first region. The stacked structure includes a first dielectric layer, a charge storage layer, a second dielectric layer, a first conductive layer, and a first hard mask layer. A dielectric material layer is formed on the substrate in the second region. A second conductive layer is formed on the dielectric material layer in the second region. A first patterned photoresist layer is formed. The first hard mask layer exposed by the first patterned photoresist layer and a portion of the dielectric material layer exposed by the first patterned photoresist layer are removed by using the first patterned photoresist layer as a mask.
    Type: Application
    Filed: August 17, 2021
    Publication date: January 26, 2023
    Applicant: United Microelectronics Corp.
    Inventors: Wen Wen Gong, Xiaofei Han, Chow Yee Lim, Hong Liao, Jun Qian
  • Publication number: 20220374355
    Abstract: An air freight rate data caching method and system. The method includes converting air freight rate data into a data format of a first-level cache, and storing same in the first-level cache; performing, on the basis of a flight origin city and a flight destination city, data fragmentation on the air freight rate data stored in the first-level cache so as to generate fragmented data; and storing the fragmented data, after same is validated, in a second-level cache. Each data node of the fragmented data cached in the second-level cache only includes part of the air freight rate data on which a fragmentation algorithm can be performed, and therefore, the horizontal expansion capacity of a cache system is improved relative to the case where cached data copies are all complete sets.
    Type: Application
    Filed: July 8, 2020
    Publication date: November 24, 2022
    Applicant: TravelSky Technology Limited
    Inventors: Jinfang Du, Lingbin Meng, Wen Wen, Chunsheng Ju, Bing Liu, Yongbo Fei
  • Patent number: 11507049
    Abstract: The present invention discloses a method for detecting abnormity in an unsupervised industrial system based on deep transfer learning. Labeled machine sensor sequence data from a source domain and unlabeled sensor sequence data from a target domain are used in the present invention to train an industrial system abnormal detection model with good generalization ability, and the industrial system abnormal detection model is trained and tested to finally generate a trained industrial system abnormity discrimination model. Using the model, received machine sensor sequence data can be analyzed and whether a machine is abnormal is discriminated.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: November 22, 2022
    Assignee: GUANGDONG UNIVERSITY OF TECHNOLOGY
    Inventors: Ruichu Cai, Zijian Li, Wen Wen, Zhifeng Hao, Lijuan Wang, Bingfeng Chen, Boyan Xu, Junfeng Li
  • Publication number: 20220334558
    Abstract: A system performs adaptive thermal ceiling control at runtime. The system includes computing circuits and a thermal management module. When detecting a runtime condition change that affects power consumption in the system, the thermal management module determines an adjustment to the thermal ceiling of a computing circuit, and increases the thermal ceiling of the computing circuit according to the adjustment.
    Type: Application
    Filed: September 30, 2021
    Publication date: October 20, 2022
    Inventors: Bo-Jr Huang, Jia-Wei Fang, Jia-Ming Chen, Ya-Ting Chang, Chien-Yuan Lai, Cheng-Yuh Wu, Yi-Pin Lin, Wen-Wen Hsieh, Min-Shu Wang
  • Publication number: 20220302369
    Abstract: A magnetoresistive random access memory (MRAM) structure is provided in the present invention, including multiple MRAM cells, and an atomic layer deposition dielectric layer between and at outer sides of the MRAM cells, wherein the material of top electrode layer is titanium nitride, and the nitrogen percentage is greater than titanium percentage and further greater than oxygen percentage in the titanium nitride, and the nitrogen percentage gradually increases inward from the top surface of top electrode layer to a depth and then start to gradually decrease to a first level and then remains constant, and the titanium percentage gradually decreases inward from the top surface of top electrode layer to the depth and then start to gradually increase to a second level and then remains constant.
    Type: Application
    Filed: April 25, 2021
    Publication date: September 22, 2022
    Inventors: Hui-Lin Wang, Bo-Yun Huang, Wen-Wen Zhang, Kun-Chen Ho