Abstract: A ceiling fan blade assembly structure includes a blade holder, multiple fan blades, and multiple locking assemblies. Multiple fan blade assembly portions are disposed at an outer side of the blade holder. Each fan blade assembly portion includes two first side plates parallel to each other, a first radial positioning portion, and two first vertical positioning portions disposed on the two first side plates. Each fan blade has a fan blade connection portion that includes two second side plates, a second radial positioning portion, and two second vertical positioning portions. The second and the first radial positioning portions are engaged with each other, and the two second and first vertical positioning portions are engaged with each other. Accordingly, the fan blade connection portion is preliminarily positioned on the fan blade assembly portion. Through the locking assembly, the first and the second radial positioning portions are locked together.

Abstract: A near space atmospheric state simulation method and device based on the quantum walk comprises: firstly, based on a characteristic of a near space atmosphere changing along with latitude, dividing a study region into a plurality of bands according to the latitude; secondly, based on a one-dimensional topology network constructed by the bands, simulating interaction and transfer processes of gas molecules between the bands by quantum walk to obtain all possible near space atmospheric evolution models; then, screening for actually existing evolution models in each of the bands based on stepwise regression by taking observed atmospheric density data as constraint conditions; and finally, constructing a mapping mechanism between a plurality of near space atmospheric evolution models and atmospheric density parameter values to achieve simulation and optimization of near space atmospheric states.

Abstract: In a method of manufacturing a semiconductor device, an n-type source/drain epitaxial layer and a p-type source/drain epitaxial layer respectively formed, a dielectric layer is formed over the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer, a first opening is formed in the dielectric layer to expose a part of the n-type source/drain epitaxial layer and a second opening is formed in the dielectric layer to expose a part of the p-type source/drain epitaxial layer, and the n-type source/drain epitaxial layer and the p-type source/drain epitaxial layer respectively recessed. A recessing amount of the n-type source/drain epitaxial layer is different from a recessing amount of the p-type source/drain epitaxial layer.

Abstract: A system performs adaptive thermal ceiling control at runtime. The system includes computing circuits and a thermal management module. When detecting a runtime condition change that affects power consumption in the system, the thermal management module determines an adjustment to the thermal ceiling of a computing circuit, and increases the thermal ceiling of the computing circuit according to the adjustment.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a shallow trench isolation (STI) in a substrate, forming a first gate structure on the substrate and adjacent to the STI, forming a first doped region between the first gate structure and the STI, forming a second doped region between the first doped region and the first gate structure, forming a first contact plug on the first doped region, and then forming a second contact plug on the second doped region.

Abstract: A ceiling fan and a structure thereof are provided. The structure includes a blade holder, a plurality of blades, and a plurality of positioning elements. The blade holder includes a holder body and a plurality of support platforms. The holder body has a plurality of first matching structures spaced apart from each other. Each of the support platforms includes a first positioning structure. Each of the blades has a second matching structure and a second positioning structure. The second matching structures can be guided by the first matching structures, so that each of the blades is disposed at an installation position on one of the support platforms along an oblique track. When each of the blades is located at the installation position, the first positioning structures and the second positioning structures abut against each other.

Abstract: The present disclosure provides a base assembly of voice coil motor and a voice coil motor. The base assembly includes a base body having a first elastic piece connecting area, a lower elastic piece disposed on the first elastic piece connecting area, and a first terminal disposed in the base body. The first terminal has: a first conductive part disposed in the base body; a first terminal connecting part disposed on one side of the first conductive part and extending toward a direction away from the first conductive part, wherein a part of the first terminal connecting part protrudes from the first elastic piece connecting area and is contacted and connected with the lower elastic piece; and an engaging part disposed on one side of the first terminal connecting part and extending toward a direction away from the first terminal connecting part.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: A radiography diagnosis device includes a casing having an opening, a first shielding structure, a dose measuring unit, a transmission-type X-ray source module, and an image receiving assembly. The first shielding structure is disposed in the casing and forms a shielded space located between the transmission-type X-ray source module and the image receiving assembly and corresponding to the opening. An object to be detected is adapted to enter the shielded space through the opening. The transmission-type X-ray source module is disposed in the casing and adapted to provide an X-ray toward the object to be detected in the shielded space. The image receiving assembly is disposed in the casing. During image capturing, the X-ray generated by the transmission-type X-ray source module is received by the dose measuring unit, and the image receiving assembly receives the X-ray passing through the object to be detected at the same time.

Abstract: An anti-twist structure of voice coil motor includes a base, a lens housing, an elastic sheet, a magnet, and a yoke member. The lens housing has a margin wall, and the margin wall has a first protrusion and a contact portion. The elastic sheet has a hollowed slot, and the first protrusion pass through the hollowed slot, so that the elastic sheet is disposed on a portion of the margin wall and on the contact portion. The yoke member has an upper wall and a side wall. The side wall is disposed at one side of the upper wall and the side wall extends outward in a direction not parallel to the upper wall. The yoke member surrounds the lens housing, the elastic sheet, and the magnet. The lens housing has a deflectable angle relative to a horizontal reference line.

Abstract: An anti-twist structure of voice coil motor includes a base, a lens housing, an elastic sheet, a magnet, and a yoke member. The lens housing has a margin wall, and the margin wall has a first protrusion and a contact portion. The elastic sheet has a hollowed slot, and the first protrusion pass through the hollowed slot, so that the elastic sheet is disposed on a portion of the margin wall and on the contact portion. The yoke member has an upper wall and a side wall. The side wall is disposed at one side of the upper wall and the side wall extends outward in a direction not parallel to the upper wall. The yoke member surrounds the lens housing, the elastic sheet, and the magnet. The lens housing has a deflectable angle relative to a horizontal reference line.

Abstract: A micro-electro-mechanical system (MEMS) microphone is provided. The MEMS microphone includes a substrate, a diaphragm, a backplate and a first protrusion. The substrate has an opening portion. The diaphragm is disposed on one side of the substrate and extends across the opening portion of the substrate. The backplate includes a plurality of acoustic holes. The backplate is disposed on one side of the diaphragm. An air gap is formed between the backplate and the diaphragm. The first protrusion extends from the backplate towards the air gap.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: At least one computer processor can replace visual words of an unsupervised machine learning classification model with visual objects of an image. At least two co-occurring single visual objects adjacent to each other in pixels of the image can be combined to obtain a compound visual object. The unsupervised machine learning classification model can be augmented to model the image as a mixture of subjects, where each subject is represented through placements of the visual objects in a mixture of concentric spheres centering on a mixture of intersections on a mixture of horizontal layers. At least one processor can learn latent relationships between the placements of the visual objects in a three-dimensional space depicted in the image and image semantics. Learning the latent relationships trains the unsupervised machine learning classification model to perform image subject classification through the placements of the visual objects in a new image.

Abstract: An antenna system includes a first antenna element and a second antenna element. The first antenna element includes a first ground element, a first radiation element, a second radiation element, and a third radiation element. The first radiation element has a first feeding point. The second radiation element is coupled to the first ground element. The third radiation element is coupled to the first ground element. The third radiation element is adjacent to the first radiation element and the second radiation element. The second antenna element includes a second ground element, a fourth radiation element, a fifth radiation element, and a sixth radiation element. The fourth radiation element has a second feeding point. The fifth radiation element is adjacent to the fourth radiation element. The fifth radiation element is coupled through the sixth radiation element to the second ground element.

Abstract: A foamable resin composition comprising: (meth)acrylate oligomer, which accounts for 10-40 wt % of the foamable resin composition; (meth)acrylate monomer, which accounts for 35-80 wt % of the foamable resin composition; a photocuring initiator, which accounts for 1-5 wt % of the foamable resin composition; and a foaming agent, which accounts for 3-20 wt % of the foamable resin composition; wherein the foamable resin composition has a specific gravity of 0.10-1.05 g/cm3 after photocuring and thermal foam expansion for 15-20 minutes at 120° C. The aforementioned foamable resin composition can become a low specific gravity (0.10-1.05 g/cm3) material after photocuring and thermal foam expansion, then can expand the application in 3D printing, and manufacture of plastic products, such as shoe soles, coasters, floats, various types of protective gear and the like.

Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.

Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Abstract: A method for knowledge representation and deduction of service logic includes: generating, based on a knowledge representation model, a semantic graph corresponding to conceptual-layer service logic, where the semantic graph includes one or more types of nodes and edges for connecting the one or more types of nodes, and the nodes include at least a node of a variable type; generating, based on the semantic graph and a physical table to which a service object is mapped, an instance graph, where the instance graph includes the nodes and edges in the semantic graph; generating executable code based on a service logic relationship between the nodes in the instance graph; and determining, based on the executable code and a data instance corresponding to a node whose in-degree is 0 in the instance graph, a data instance corresponding to each node in the instance graph.