Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Abstract: An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an interconnect structure over a substrate. The method includes forming a first conductive pad and a mask layer over the interconnect structure. The mask layer covers a top surface of the first conductive pad. The method includes forming a metal oxide layer over a sidewall of the first conductive pad. The method includes forming a second conductive pad over the first conductive pad and passing through the mask layer. The first conductive pad and the second conductive pad are made of different materials.

Abstract: A device for imaging one dimension nanomaterials is provided. The device includes an optical microscope with a liquid immersion objective, a laser device, and a spectrometer. The laser device is configured to provide an incident light beam with a continuous spectrum. The spectrometer is configured to obtain spectral information of the one dimensional nanomaterials.

Abstract: A method for imaging 1-D nanomaterials is provided. The method includes: providing a 1-D nanomaterials sample; immersing the 1-D nanomaterials sample in a liquid; illuminating the 1-D nanomaterials sample by a first incident light and a second incident light to cause resonance Rayleigh scattering, wherein the first incident light and the second incident light are not parallel to each other; and acquiring a resonance Rayleigh scattering image of the 1-D nanomaterials sample with a microscope.

Abstract: A imaging device 1-D nanomaterials is provided. The device includes: a first light source, a second light source, a microscope with a liquid immersion object, and a carrier. The first light source is configured to provide a first incident light and the second light source is configured to provide a second incident light, the first incident light and the incident light are not parallel to each other. The carrier is configured to contain a 1-D nanomaterials sample and a liquid, both the 1-D nanomaterials sample and the liquid immersion object are immersed in the liquid.

Abstract: An electrostatic sensing device comprises an electrostatic sensing module and a control unit electrically connected to the electrostatic sensing module. The electrostatic sensing module comprises a first electrostatic sensing element comprising opposite ends, and two first electrodes. The two first electrodes are separately located on and electrically connected to the two opposite ends of the first electrostatic sensing element. The first electrostatic sensing element is a single walled carbon nanotube or a few-walled carbon nanotube. The control unit electrically is configured to apply a direct voltage to the first electrostatic sensing element and measure a current/resistance of the first electrostatic sensing element.

Abstract: An electrostatic sensing device comprises an electrostatic sensing module and a control unit electrically connected to the electrostatic sensing module. The electrostatic sensing module comprises a first electrostatic sensing element comprising opposite ends, and two first electrodes. The two first electrodes are separately located on and electrically connected to the two opposite ends of the first electrostatic sensing element. The first electrostatic sensing element is a single walled carbon nanotube or a few-walled carbon nanotube. The control unit electrically is configured to apply a direct voltage to the first electrostatic sensing element and measure a current/resistance of the first electrostatic sensing element.

Abstract: A hover controlling device includes a sensing unit and a hover control unit. The sensing unit includes a plurality of first electrostatic sensing elements, a plurality of first electrodes, a plurality of second electrostatic sensing elements, and a plurality of third electrodes located on a substrate. Each first electrostatic sensing element and each second electrostatic sensing element include a single walled carbon nanotube or a few-walled carbon nanotube. The resistances of the plurality of first electrostatic sensing elements and the plurality of second electrostatic sensing elements are changed in process of a sensed object with electrostatic near, but does not touch the plurality of first electrostatic sensing elements and the plurality of second electrostatic sensing elements. The hover control unit is electrically connected to the plurality of first electrostatic sensing elements and the plurality of second electrostatic sensing elements.

Abstract: A hover controlling device includes a sensing unit and a hover control unit. The sensing unit includes a plurality of first electrostatic sensing elements, a plurality of first electrodes, a plurality of second electrostatic sensing elements, and a plurality of third electrodes located on a substrate. Each first electrostatic sensing element and each second electrostatic sensing element include a single walled carbon nanotube or a few-walled carbon nanotube. The resistances of the plurality of first electrostatic sensing elements and the plurality of second electrostatic sensing elements are changed in process of a sensed object with electrostatic near, but does not touch the plurality of first electrostatic sensing elements and the plurality of second electrostatic sensing elements. The hover control unit is electrically connected to the plurality of first electrostatic sensing elements and the plurality of second electrostatic sensing elements.

Abstract: A touch and hover sensing device includes a hover sensing module is located on a first surface of a substrate, the hover sensing module includes a plurality of first electrostatic sensing elements and a plurality of second electrostatic sensing elements electrically insulated from each other. Each of the plurality of first electrostatic sensing elements and each of the plurality of second electrostatic sensing elements include a single walled carbon nanotube or few-walled carbon nanotube. A touch sensing module is located on a second surface of the substrate. The hover sensing module and the touch sensing module are connected to a control chip, the control chip controls the hover sensing module and the touch sensing module simultaneously working or working separately, to sense a position coordinate of the sensed object.

Abstract: A method for assigning chirality of carbon nanotube is provided. Firstly, carbon nanotube sample, an optical microscope with a liquid immersion objective and a liquid are provided. Secondly, the carbon nanotube sample is immersed in the liquid. Thirdly, the carbon nanotube sample is illuminated by an incident beam to generate resonance Rayleigh scattering. Fourthly, the liquid immersion objective is immersed into the liquid to get a resonance Rayleigh scattering (RRS) image of the carbon nanotube sample. Fifthly, spectra of the carbon nanotube sample are measured to obtain chirality of the carbon nanotube sample.

Abstract: A method for imaging one dimension nanomaterials is provided. Firstly, one dimension nanomaterials sample, an optical microscope with a liquid immersion objective and a liquid are provided. Secondly, the one dimensional nanomaterials sample is immersed in the liquid. Thirdly, the one dimensional nanomaterials sample is illuminated by an incident beam to generate resonance Rayleigh scattering. Fourthly, the liquid immersion objective is immersed into the liquid to get a resonance Rayleigh scattering (RRS) image of the one dimensional nanomaterials sample. Fifthly, spectra of the one dimensional nanomaterials sample are measured to obtain chirality of the one dimensional nanomaterials sample.

Abstract: A touch and hover sensing device includes a sensing module, a hover sensing unit, a touch sensing unit, and a switching control unit switching between a hover mode and a touch mode. The sensing module includes a plurality of first electrostatic sensing elements and a plurality of second electrostatic sensing elements electrically insulated from each other and located on a surface of an insulating substrate. The plurality of first electrostatic sensing elements is spaced from each other and extends along a first direction, and the plurality of second electrostatic sensing elements is spaced from each other and extends along a second direction. Each first electrostatic sensing element and each second electrostatic sensing element includes a single walled carbon nanotube or few-walled carbon nanotube.

Abstract: An electrostatic sensing device comprises an electrostatic sensing module and a control unit electrically connected to the electrostatic sensing module. The electrostatic sensing module comprises a first electrostatic sensing element comprising opposite ends, and two first electrodes. The two first electrodes are separately located on and electrically connected to the two opposite ends of the first electrostatic sensing element. The first electrostatic sensing element is one-dimensional semiconducting linear structure with a diameter less than 100 nanometers. The control unit electrically is configured to apply a direct voltage to the first electrostatic sensing element and measure a current/resistance of the first electrostatic sensing element.

Abstract: An electrostatic sensing device comprises an electrostatic sensing module and a control unit electrically connected to the electrostatic sensing module. The electrostatic sensing module comprises a first electrostatic sensing element comprising opposite ends, and two first electrodes. The two first electrodes are separately located on and electrically connected to the two opposite ends of the first electrostatic sensing element. The first electrostatic sensing element is a single walled carbon nanotube or a few-walled carbon nanotube. The control unit electrically is configured to apply a direct voltage to the first electrostatic sensing element and measure a current/resistance of the first electrostatic sensing element.

Abstract: An electrostatic sensing method is provided. An electrostatic sensing device comprising an electrostatic sensing module comprising a first electrostatic sensing element, and a control unit electrically connected to the electrostatic sensing module is provided. The first electrostatic sensing element is one-dimensional semiconducting linear structure. A direct voltage is applied to the first electrostatic sensing element. A sensed object with electrostatic charge is moved to the electrostatic sensing device in a distance near but not touching the first electrostatic sensing element. A resistance changed value of the first electrostatic sensing element is measured.

Abstract: A method for imaging 1-D nanomaterials is provided. The method includes: providing a 1-D nanomaterials sample; immersing the 1-D nanomaterials sample in a liquid; illuminating the 1-D nanomaterials sample by a first incident light and a second incident light to cause resonance Rayleigh scattering, wherein the first incident light and the second incident light are not parallel to each other; and acquiring a resonance Rayleigh scattering image of the 1-D nanomaterials sample with a microscope.