Abstract: An apparatus for providing a return current path for RF current between a chamber wall and a substrate support is provided comprising a low impedance flexible curtain having a first end and a second end, the first end adapted to be electrically connected to the chamber wall and the second end adapted to be connected to the substrate support, wherein the curtain further comprises at least one fold in the curtain material, located an axial distance between the first end and the second end, and at least one perforation cut into the curtain proximate the second end.

Abstract: Provided herein is a double dual slot load lock chamber. The double dual slot load lock chamber includes two isolated load lock regions that are vertically stacked and share a common wall, wherein each isolated load lock region comprises two substrate slots.

Abstract: A load lock chamber and method for transferring large area substrates is provided. In one embodiment, a load lock chamber suitable for transferring large area substrates includes a plurality of vertically stacked single substrate transfer chambers. The configuration of vertically stacked single substrate transfer chambers contributes to reduced size and greater throughput as compared to conventional state of the art, dual slot dual substrate designs. Moreover, the increased throughput has been realized at reduced pumping and venting rates, which corresponds to reduced probability of substrate contamination due to particulates and condensation.

Abstract: A method for conditioning a surface of a substrate, particularly substrates useful in a fuel cell, is disclosed. In one aspect, a method is disclosed for treating a substrate to increase the substrate's resistance to acid etching. The method includes depositing a layer of etch-resistant material via a PVD process onto a surface of the substrate. The substrate may comprise a carbon composite material or a conductive polymer, among others. In one aspect, the layer of etch-resistant material is about 1000 ? thick or less. In another aspect, the layer of etch-resistant material is a TiN layer. In another embodiment, a method is provided for treating a surface of a substrate decrease the substrate's liquid contact angle. The method includes depositing a layer of hydrophilic material via a PVD process onto a surface of the substrate. In one aspect, the deposited material may be a low resistivity material.

Abstract: One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as well as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

Abstract: Embodiments of a substrate handling system are provided herein. In one embodiment apparatus for handling a substrate includes a conveyor having a plurality of rollers arranged to convey a substrate thereon and a substrate handler. The substrate handler includes a first bracket and a first plurality of fingers extending horizontally from the first bracket. The first plurality of fingers has a substrate support surface and is disposed between adjacent ones of the plurality of rollers. The substrate handler is movable between an idle position having the first plurality of fingers disposed beneath a support elevation of the plurality of rollers, and a transfer position having the first plurality of fingers disposed above the plurality of rollers.

Abstract: Embodiments of a vacuum conveyor system are provided herein. In one embodiment a vacuum conveyor system includes a first vacuum sleeve having a plurality of rollers that support and move substrates through the first vacuum sleeve. A port is provided for sealably coupling the first vacuum sleeve to a process chamber. A first substrate handler is disposed proximate the port. Multiple ports may be provided for sealably coupling the first vacuum sleeve to a plurality of process chambers. A dedicated substrate handler is provided for each process chamber. A second vacuum sleeve may be sealably coupled to an opposing side of the process chambers. The vacuum conveyor system may be modular with independent modules linked via load lock chambers. The plurality of rollers may compensate for any sag of the leading edge of a substrate being transported thereupon.

Abstract: Embodiments of a vacuum conveyor system are provided herein. In one embodiment, apparatus for conveying a substrate includes a vacuum sleeve and a plurality of rollers disposed within the vacuum sleeve for supporting and transporting the substrate thereupon. The plurality of rollers is adapted to simultaneously support the substrate thereupon at a plurality of elevations. A leading edge of the substrate is supported at an elevation above an adjacent one of the plurality of rollers in the direction of travel.

Abstract: In one embodiment, a slit valve is provided that is adapted to seal an opening and that includes a valve housing having a first wall, a first opening formed in the first wall, a second wall and a second opening formed in the second wall. The slit valve also includes a closure member having a sealing portion adapted to contact the second wall and seal the second opening, and a bracing member moveable relative to the sealing portion and adapted to contact the first wall. The slit valve further includes at least one actuating mechanism adapted to (1) move the sealing portion toward the second wall and into contact with the second wall; and (2) move the bracing member away from the sealing portion and into contact with the first wall so as to brace the sealing portion against the second wall. Numerous other aspects are provided.

Abstract: An apparatus for providing a return current path for RF current between a chamber wall and a substrate support is provided comprising a low impedance flexible curtain having a first end and a second end, the first end adapted to be electrically connected to the chamber wall and the second end adapted to be connected to the substrate support, wherein the curtain further comprises at least one fold in the curtain material, located an axial distance between the first end and the second end, and at least one perforation cut into the curtain proximate the second end.

Abstract: A method and apparatus for fabricating large scale PV cell and solar module/panel is disclosed. The method includes designing a PV cell wiring scheme for a number of PV cells and patterning a plurality of features on a large size silicon sheet. A number of large scale silicon sheets, having a number of PV cells on each silicon sheet, can be bonded to a wiring plane to directly manufacture into a solar module/panel. Each PV cell on the solar module is then isolated. Methods of the invention greatly cut down the cost of solar module/panel manufacturing and PV cell assembly.

Abstract: In a first aspect, a first multi-piece chamber is provided. The first multi-piece chamber includes (1) a central piece having a first side and a second side; (2) a first side piece adapted to couple with the first side of the central piece; and (3) a second side piece adapted to couple with the second side of the central piece. The central piece, the first side piece and the second side piece form a substantially cylindrical inner chamber region when coupled together. The pieces may each include openings in the top of the pieces and flat mounting surfaces for coupling the pieces together. Numerous other aspects are provided.

Abstract: Provided herein is a substrate processing system, which comprises a cassette load station; a load lock chamber; a centrally located transfer chamber; and one or more process chambers located about the periphery of the transfer chamber. The load lock chamber comprises double dual slot load locks constructed at same location. Such system may be used for processing substrates for semiconductor manufacturing.

Abstract: An apparatus for providing a return current path for RF current between a chamber wall and a substrate support is provided comprising a low impedance flexible curtain having a first end and a second end, the first end adapted to be electrically connected to the chamber wall and the second end adapted to be connected to the substrate support, wherein the curtain further comprises at least one fold in the curtain material, located an axial distance between the first end and the second end, and at least one perforation cut into the curtain proximate the second end.

Abstract: A transfer chamber for a substrate processing tool includes a main body having side walls adapted to couple to at least one processing chamber and at least one load lock chamber. The main body houses at least a portion of a robot adapted to transport a substrate between the processing chamber and the load lock chamber. A lid couples to and seals a top of the main body of the transfer chamber. The transfer chamber also has a domed bottom adapted to couple to and to seal a bottom portion of the main body of the transfer chamber.

Abstract: A method and apparatus for depositing a dielectric material at a rate of at least 3000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is provided. In one embodiment, the dielectric material is silicon oxide. Also provided is a large area substrate having a layer of dielectric material deposited by a process yielding a deposition rate in excess of about 3000 Angstroms per minute and a processing chamber for fabricating the same.

Abstract: An apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support is provided. The RF grounding apparatus, which is RF grounded and is place above the substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing.

Abstract: In a first aspect, a first multi-piece chamber is provided. The first multi-piece chamber includes (1) a central piece having a first side and a second side; (2) a first side piece adapted to couple with the first side of the central piece; and (3) a second side piece adapted to couple with the second side of the central piece. The central piece, the first side piece and the second side piece form a substantially cylindrical inner chamber region when coupled together. Numerous other aspects are provided.

Abstract: An actuator assembly for a slit valve door is configured to maintain a slit valve in a closed condition notwithstanding a high pressure differential between adjacent chambers that the slit valve isolates from each other. The slit valve door actuator assembly includes an actuator which moves the slit valve door between open and closed positions, and a locking mechanism to keep the slit valve door in a position to seal the slit valve in resistance to high gas pressure against the slit valve door. The locking mechanism may include a hard stop which is selectively movable into position to block retracting movement of the slit valve door.

Abstract: A method and apparatus for dechucking a substrate is provided. In one embodiment, a processing chamber is provided that includes a grounded chamber body having a substrate support assembly disposed in an interior volume. A dechucking circuit selectively couples the substrate support assembly to ground or to a power source. In another embodiment of the invention, a method for dechucking a substrate includes the steps of completing a plasma process on a substrate disposed on a grounded substrate support assembly, disconnecting the substrate support assembly from ground, and applying a dechucking voltage to the substrate support assembly.