Patents by Inventor Wendy H. Yeh

Wendy H. Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
    Patent number: 7064078
    Abstract: A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
    Type: Grant
    Filed: January 30, 2004
    Date of Patent: June 20, 2006
    Assignee: Applied Materials
    Inventors: Wei Liu, Jim Zhongyi He, Sang H. Ahn, Meihua Shen, Hichem M'Saad, Wendy H. Yeh, Chistopher D. Bencher
  • Nitrogen-free antireflective coating for use with photolithographic patterning
    Patent number: 6853043
    Abstract: A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.
    Type: Grant
    Filed: November 4, 2002
    Date of Patent: February 8, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Wendy H. Yeh, Sang Ahn, Christopher Dennis Bencher, Hichem M'Saad, Sudha Rathi
  • Nitrogen-free antireflective coating for use with photolithographic patterning
    Publication number: 20040087139
    Abstract: A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.
    Type: Application
    Filed: November 4, 2002
    Publication date: May 6, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Wendy H. Yeh, Sang Ahn, Christopher Dennis Bencher, Hichem M'Saad, Sudha Rathi
  • Ashable layers for reducing critical dimensions of integrated circuit features
    Publication number: 20030219988
    Abstract: A method is described for decreasing the critical dimensions of integrated circuit features in which a first masking layer (101) is deposited, patterned and opened in the manner of typical feature etching, and a second masking layer (201) is deposited thereon prior to etching the underlying insulator. The second masking layer is advantageously coated in a substantially conformal manner. Opening the second masking layer while leaving material of the second layer on the sidewalls of the first masking layer as spacers leads to reduction of the feature critical dimension in the underlying insulator. Ashable masking materials, including amorphous carbon and organic materials are removable without CMP, thereby reducing costs. Favorable results are also obtained utilizing more than one masking layer (101, 301) underlying the topmost masking layer (302) from which the spacers are formed. Embodiments are also described in which slope etching replaces the addition of a separate spacer layer.
    Type: Application
    Filed: May 22, 2002
    Publication date: November 27, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Hongqing Shan, Kenny L. Doan, Jingbao Liu, Michael S. Barnes, Huong Thanh Nguyen, Christopher Dennis Bencher, Christopher S. Ngai, Wendy H. Yeh, Eda Tuncel, Claes H. Bjorkman