Patents by Inventor Wendy L. Valentine

Wendy L. Valentine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single supply HFET with temperature compensation
    Patent number: 6479843
    Abstract: A method of fabricating apparatus, and the apparatus, for providing low voltage temperature compensation in a single power supply HFET including a stack of epitaxially grown compound semiconductor layers with an HFET formed in the stack. A Schottky diode is formed in the stack adjacent the HFET during the formation of the HFET. The HFET and the Schottky diode are formed simultaneously, with a portion of one of the layers of metal forming the gate of the HFET being positioned in contact with a layer of the stack having a low bandgap (e.g. less than 0.8 eV) to provide a turn-on voltage for the Schottky diode of less than 1.8 Volts. The Schottky diode is connected to the gate contact of the HFET by a gate circuit to compensate for changes in current loading in the gate circuit with changes in temperature.
    Type: Grant
    Filed: April 27, 2000
    Date of Patent: November 12, 2002
    Assignee: Motorola, Inc.
    Inventors: Jenn-Hwa Huang, Elizabeth C. Glass, Olin Hartin, Wendy L. Valentine, Julio Costa
  • Single supply hfet with temperature compensation
    Publication number: 20020127787
    Abstract: A method of fabricating apparatus, and the apparatus, for providing low voltage temperature compensation in a single power supply HFET including a stack of epitaxially grown compound semiconductor layers with an HFET formed in the stack. A Schottky diode is formed in the stack adjacent the HFET during the formation of the HFET. The HFET and the Schottky diode are formed simultaneously, with a portion of one of the layers of metal forming the gate of the HFET being positioned in contact with a layer of the stack having a low bandgap (e.g. less than 0.8 eV) to provide a turn-on voltage for the Schottky diode of less than 1.8 Volts. The Schottky diode is connected to the gate contact of the HFET by a gate circuit to compensate for changes in current loading in the gate circuit with changes in temperature.
    Type: Application
    Filed: April 27, 2000
    Publication date: September 12, 2002
    Inventors: Jenn-Hwa Huang, Elizabeth C. Glass, Olin Hartin, Wendy L. Valentine, Julio Costa