Abstract: In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. When the ferroelectric film is formed, the metal oxide film formed over the first metal film is reduced to a second metal film and the ferroelectric film is formed over the second metal film. When the ferroelectric film is formed, the amorphous or microcrystalline metal oxide film is apt to be reduced uniformly. As a result, the second metal film the orientation of which is good is obtained and the ferroelectric film the orientation of which is good is formed over the second metal film. After the ferroelectric film is formed, an upper electrode is formed over the ferroelectric film.

Abstract: According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film 11, a crystalline conductive film 21, a first conductive film 23, a ferroelectric film 24 and a second conductive film 25 on a silicon substrate 1 in sequence, forming a conductive cover film 18 on the second conductive film 25, forming a hard mask 26a on the conductive cover film 18, forming a capacitor upon etching the conductive cover film 18, the second conductive film 25, the ferroelectric film 24 and the first conductive film 23 using the hard mask 26a as an etching mask in areas exposed from the hard mask 26a, and etching the hard mask 26a and the crystalline conductive film 21 exposed from the lower electrode 23a using an etching condition under which the hard mask 26a is etched.

Abstract: A semiconductor device includes a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film.

Abstract: An FeRAM is produced by a method including the steps of forming a lower electrode layer (24), forming a first ferroelectric film (25a) on the lower electrode layer (24), forming on the first ferroelectric film (25a) a second ferroelectric film (25b) in an amorphous state containing iridium inside, thermally treating the second ferroelectric film (25b) in an oxidizing atmosphere to crystallize the second ferroelectric film (25b) and to cause iridium in the second ferroelectric film (25b) to diffuse into the first ferroelectric film (25a), forming an upper electrode layer (26) on the second ferroelectric film (25b), and processing each of the upper electrode layer (26), the second ferroelectric film (25b), the first ferroelectric film (25a), and the lower electrode layer (24) to form the capacitor structure.

Abstract: Ferroelectric capacitors (42) are formed over a semiconductor substrate (10), then, a barrier film (46) directly covering the ferroelectric capacitors (42) is formed. Thereafter, wirings (56a etc.) connected to the ferroelectric capacitors (42) are formed. Further, a barrier film (58) is formed at a position higher than the wirings (56a etc.). In forming the barrier film (46), a film stack is formed, the film stack including at least two kinds of diffusion preventive films (46a and 46b) having different components and preventing diffusion of hydrogen or water.

Abstract: The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.

Abstract: A magnetron-sputtering film-forming apparatus includes: a vacuum film-forming chamber (11); electrostatic chuck units (12) for adjusting a temperature of the substrate (14); a target (15) for causing high-frequency magnetron sputtering; power supply units (17) for applying a discharge voltage between the substrate (14) and the target (15), and calculating an integral power consumption of an electricity discharged by the target (15); and control units (18) for controlling the electrostatic chuck units (12) and the power supply units (17). In the magnetron-sputtering film-forming apparatus, the temperature of the substrate to be processed (14) that is most suitable for sputtering is calculated based on the integral power consumption of the electricity discharged by the target (15) until that time, and the substrate (14) is adjusted to have a predetermined temperature to be subjected to the sputtering.

Abstract: A ferroelectric capacitor is formed over a semiconductor substrate (10), and thereafter, interlayer insulating films (48, 50, 52) covering the ferroelectric capacitor are formed. Next, a contact hole (54) reaching a top electrode (40) is formed in the interlayer insulating films (48, 50, 52). Next, a wiring (58) electrically connected to the top electrode (40) through the contact hole (54) is formed on the interlayer insulating films (48, 50, 52). At the time of forming the top electrode (40), conductive oxide films (40a, 40b) are formed, and then a cap film (40c) composed of a noble metal exhibiting less catalytic action than Pt and having a thickness of 150 nm or less is formed on the conductive oxide films (40a, 40b).

Abstract: An FeRAM is produced by a method including the steps of forming a lower electrode layer (24), forming a first ferroelectric film (25a) on the lower electrode layer (24), forming on the first ferroelectric film (25a) a second ferroelectric film (25b) in an amorphous state containing iridium inside, thermally treating the second ferroelectric film (25b) in an oxidizing atmosphere to crystallize the second ferroelectric film (25b) and to cause iridium in the second ferroelectric film (25b) to diffuse into the first ferroelectric film (25a), forming an upper electrode layer (26) on the second ferroelectric film (25b), and processing each of the upper electrode layer (26), the second ferroelectric film (25b), the first ferroelectric film (25a), and the lower electrode layer (24) to form the capacitor structure.

Abstract: The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.

Abstract: A semiconductor device manufacturing method includes forming a first film made of a first metal to an upper portion of a substrate, forming a second film made of an amorphous metal oxide or an microcrystalline metal oxide on the first film, subjecting the second film to a heat treatment, subjecting the second film after the heat treatment to a reduction treatment, forming a third film made of a ferroelectric material on the second film, and forming a fourth film made of a second metal on the third film.

Abstract: A semiconductor device includes a capacitor, the capacitor includes a lower electrode, which includes platinum, provided above a semiconductor substrate; a first ferroelectric film, which includes lead zirconate titanate added with La, provided on the lower electrode; a second ferroelectric film, which includes lead zirconate titanate added with La, Ca, and Sr, provided directly on the first ferroelectric film, the second ferroelectric film having a thickness smaller than that of the first ferroelectric film and includes amounts of Ca and Sr greater than amounts of Ca and Sr that may be present in the first ferroelectric film; and an upper electrode, which includes a conductive oxide, provided on the second ferroelectric film.

Abstract: A semiconductor device includes a ferroelectric capacitor formed above the lower interlevel insulating film covering a MOS transistor formed on a semiconductor substrate, including lamination of a lower electrode, an oxide ferroelectric film, a first upper electrode made of conductive oxide having a stoichiometric composition AOx1 and an actual composition AOx2, a second upper electrode made of conductive oxide having a stoichiometric composition BOy1 and an actual composition BOy2, where y2/y1>x2/x1, and a third upper electrode having a composition containing metal of the platinum group; and a multilayer wiring structure formed above the lower ferroelectric capacitor, and including interlevel insulating films and wirings. Abnormal growth and oxygen vacancies can be prevented which may occur when the upper electrode of the ferroelectric capacitor is made of a conductive oxide film having a low oxidation degree and a conductive oxide film having a high oxidation degree.

Abstract: A method of manufacturing a semiconductor device including forming a lower electrode over a substrate, increasing the temperature of the substrate with the lower electrode to a predetermined temperature under mixture gas atmosphere of inert gas and oxygen gas, forming a dielectric film on the lower electrode by using an organic metal raw material after the temperature reaches the predetermined temperature, and forming an upper electrode on the dielectric film.

Abstract: A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOx film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOx film containing columnar crystals is formed.

Abstract: A ferroelectric capacitor is formed over a semiconductor substrate (10), and thereafter, interlayer insulating films (48, 50, 52) covering the ferroelectric capacitor are formed. Next, a contact hole (54) reaching a top electrode (40) is formed in the interlayer insulating films (48, 50, 52). Next, a wiring (58) electrically connected to the top electrode (40) through the contact hole (54) is formed on the interlayer insulating films (48, 50, 52). At the time of forming the top electrode (40), conductive oxide films (40a, 40b) are formed, and then a cap film (40c) composed of a noble metal exhibiting less catalytic action than Pt and having a thickness of 150 nm or less is formed on the conductive oxide films (40a, 40b).

Abstract: A ferroelectric capacitor (42) is formed over a semiconductor substrate (10), and thereafter, a barrier film (46) directly covering the ferroelectric capacitor (42) is formed. Then, an interlayer insulating film (48) is formed and flattened. Then, an inclined groove is formed in the interlayer insulating film (48), and a barrier film (50) is formed over the entire surface.

Abstract: The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases.

Abstract: A semiconductor device includes a ferroelectric capacitor formed above the lower interlevel insulating film covering a MOS transistor formed on a semiconductor substrate, including lamination of a lower electrode, an oxide ferroelectric film, a first upper electrode made of conductive oxide having a stoichiometric composition AOx1 and an actual composition AOx2, a second upper electrode made of conductive oxide having a stoichiometric composition BOy1 and an actual composition BOy2, where y2/y1>x2/x1, and a third upper electrode having a composition containing metal of the platinum group; and a multilayer wiring structure formed above the lower ferroelectric capacitor, and including interlevel insulating films and wirings. Abnormal growth and oxygen vacancies can be prevented which may occur when the upper electrode of the ferroelectric capacitor is made of a conductive oxide film having a low oxidation degree and a conductive oxide film having a high oxidation degree.

Abstract: The present invention provides a semiconductor device which is characterized as follows. The semiconductor device includes: an interlayer insulating film formed above a semiconductor substrate and provided with a hole above an impurity diffusion region; a conductive plug formed in the hole and electrically connected to the impurity diffusion region; a conductive oxygen barrier film formed on the conductive plug and the interlayer insulating film around the conductive plug; a conductive anti-diffusion film formed on the conductive oxygen barrier film; and a capacitor that has a lower electrode which is formed on the conductive anti-diffusion film and which exposes platinum or palladium on the upper surface, a capacitor dielectric film made of a ferroelectric material, and an upper electrode. The conductive anti-diffusion film is made of a non-oxide conductive material for preventing the diffusion of the constituent element of the capacitor dielectric film.