Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element. Further, the dopant ink composition includes a silicon-containing compound.

Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.

Abstract: A method for fabricating a boron-comprising ink is provided. The method includes providing an inorganic boron-comprising material, combining the inorganic boron-comprising material with a polar solvent having a boiling point in a range of from about 50° C. to about 250° C., and combining the inorganic boron-comprising material with a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6.

Abstract: Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 ?m, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.

Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.

Abstract: Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.

Abstract: Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.

Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents.

Abstract: Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.

Abstract: Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 ?m, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.

Abstract: Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.

Abstract: Methods for forming doped regions in a semiconductor material that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material and methods for fabricating semiconductor devices that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material are provided. In one exemplary embodiment, a method for forming doped regions in a semiconductor material comprises depositing a conductivity-determining type dopant comprising a dopant element overlying a first portion of the semiconductor material. A diffusion barrier material is applied such that it overlies a second portion of the semiconductor material. The dopant element of the conductivity-determining type dopant is diffused into the first portion of the semiconductor material.

Abstract: Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes are provided. In an exemplary embodiment, a method for forming doped regions in a semiconductor substrate is provided. The method comprises providing an ink comprising a conductivity-determining type dopant, applying the ink to the semiconductor substrate using a non-contact printing process, and subjecting the semiconductor substrate to a thermal treatment such that the conductivity-determining type dopant diffuses into the semiconductor substrate.

Abstract: Thermal interface materials comprise at least one silicon-based polymer and are formed from a combination of at least one silicon-based material, at least one catalyst and at least one elasticity promoter. In some embodiments, contemplated materials are also formed utilizing at least one polymerization component. Thermal interface materials are also disclosed that are capable of withstanding temperatures of at least 250 C where the material comprises at least one silicon-based polymer coupled with at least one elasticity promoter. Methods of forming these thermal interface materials comprise providing each of the at least one silicon-based material, at least one catalyst and at least one elasticity promoter, blending the components and optionally including the at least one polymerization component. Contemplated thermal interface materials disclosed are thermally stable, sticky, and elastic, and show a good thermal conductivity and strong adhesion when deposited on the high thermally conductive material.

Abstract: A method for forming a substantially transparent nanoporous organosilicate film on a substantially transparent substrate, for use in optical lighting devices such as organic light emitting diodes (OLEDs). The method includes first preparing a composition comprising a silicon containing pre-polymer, a porogen, and a catalyst. The composition is coated onto a substrate which is substantially transparent to visible light, forming a film thereon. The film is then gelled by crosslinking and cured by heating, such that the resulting cured film is substantially transparent to visible light. It is preferred that both the substrate and the nanoporous film are at least 98% transparent to visible light. Optical devices which include the resulting structures of this invention exhibit improved light extraction and illuminance where the nanoporous organosilicate film has a low refractive index in the range of 1.05 to 1.4, serving as an impedance matching layer in such devices.

Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents.

Abstract: The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits having improved electrical properties. A silica dielectric film is formed on a substrate (a) preparing a composition comprising a silicon containing pre-polymer, a metal-ion-free catalyst, and optionally water; (b) coating a substrate with the composition to form a film, (c) crosslinking the composition by first heating the composition in a nitrogen atmosphere at a temperature of from about 750° C. to about 850° C. for from about 30 minutes to about 120 minutes; and thereafter heating the composition in an oxygen atmosphere at a temperature of from about 850° C. to about 1000° C. for from about 30 minutes to about 120 minutes, effective to produce a substantially crack-free, and substantially void-free silica dielectric film having a density of from about 1.8 to about 2.3 g/ml, a dielectric constant of about 4.

Abstract: The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.

Abstract: Nanoporous low dielectric constant materials are fabricated from a first reagent and a second reagent. The reagents are mixed to give a reagent mixture and a polymeric structure is formed from the reagent mixture. Nanosized voids are created by removing at least in part the second reagent from the polymeric structure by a method other than thermolysis, and other than evaporation.