Abstract: In certain aspects, a semiconductor device includes a vertical transistor, a metal bit line, and a pad layer. The vertical transistor includes a semiconductor body extending in a first direction, and a gate structure coupled to at least one side of the semiconductor body. The gate structure includes a gate dielectric and a gate electrode. The metal bit line extends in a second direction perpendicular to the first direction and coupled to a terminal of the vertical transistor via an ohmic contact. The pad layer is positioned between the gate electrode and the metal bit line in the first direction. The gate dielectric and the pad layer have different dielectric materials.

Abstract: An anechoic chamber and a construction method thereof are provided, the anechoic chamber includes a top surface, being a polygon; trapezoid surfaces, corresponding to edges of top surface, upper edge lengths of trapezoid surface being equal to edge lengths of top surface, trapezoid surfaces being connected to edges of top surface through the upper edges, the trapezoid surfaces being sequentially connected along a circumferential direction of top surface, and being at angle to the top surface; rectangular surfaces, corresponding to the trapezoid surfaces, upper edge lengths of rectangular surface being equal to lower edge lengths of trapezoid surface, rectangular surfaces being connected to the trapezoid surfaces through the upper edges, the rectangular surfaces being sequentially connected along a circumferential direction of the lower edges of trapezoid surfaces, and being perpendicular to the top surface; and an absorbing material, disposed on the top surface, the trapezoid surfaces and the rectangular surf

Abstract: An anechoic chamber and a construction method thereof are provided, the anechoic chamber includes a top surface, being a polygon; trapezoid surfaces, corresponding to edges of top surface, upper edge lengths of trapezoid surface being equal to edge lengths of top surface, trapezoid surfaces being connected to edges of top surface through the upper edges, the trapezoid surfaces being sequentially connected along a circumferential direction of top surface, and being at angle to the top surface; rectangular surfaces, corresponding to the trapezoid surfaces, upper edge lengths of rectangular surface being equal to lower edge lengths of trapezoid surface, rectangular surfaces being connected to the trapezoid surfaces through the upper edges, the rectangular surfaces being sequentially connected along a circumferential direction of the lower edges of trapezoid surfaces, and being perpendicular to the top surface; and an absorbing material, disposed on the top surface, the trapezoid surfaces and the rectangular surf