Patents by Inventor Werner Bergbauer
Werner Bergbauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11888083Abstract: In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 1019 cm?3.Type: GrantFiled: July 11, 2022Date of Patent: January 30, 2024Assignee: OSRAM Opto Semiconductors GmbHInventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Patent number: 11677045Abstract: A light-emitting diode includes a semiconductor body and electrical connection points for contacting the semiconductor body, the semiconductor body including an active region including a quantum well that generates electromagnetic radiation, a first region and a second region that impede passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, the first region and the second region contain aluminum, and the active region emits electromagnetic radiation having a peak wavelength of less than 480 nm.Type: GrantFiled: May 7, 2021Date of Patent: June 13, 2023Assignee: OSRAM OLED GmbHInventors: Werner Bergbauer, Joachim Hertkorn, Alexander Walter
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Patent number: 11616164Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.Type: GrantFiled: January 17, 2019Date of Patent: March 28, 2023Assignee: OSRAM OLED GMBHInventors: Philipp Drechsel, Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Publication number: 20220344532Abstract: In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 1019 cm?3.Type: ApplicationFiled: July 11, 2022Publication date: October 27, 2022Inventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Patent number: 11430907Abstract: In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.Type: GrantFiled: March 19, 2021Date of Patent: August 30, 2022Assignee: OSRAM OLED GMBHInventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Publication number: 20220013990Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0?x?1, 0?y<1 and x+y?1, wherein at least one layer of the layer system includes an aluminum portion x?0.05 or an indium portion y?0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.Type: ApplicationFiled: November 12, 2019Publication date: January 13, 2022Inventors: Jan Wagner, Werner Bergbauer, Christoph Eichler, Alfred Lell, Georg Brüderl, Matthias Peter
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Patent number: 11114584Abstract: An optoelectronic component includes an active layer having a multiple quantum well structure, wherein the multiple quantum well structure includes quantum well layers, including Alx1Iny1Ga1-x1-y1N with 0?x1<0.03, 0?y1?0.1 and x1+y1?1, and barrier layers including Alx2Iny2Ga1-x2-y2N with 0?x2?1, 0?y2?0.02 and x2+y2?1, wherein the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max?0.05, and a minimum value of the aluminium content in the barrier layers is x2,min<0.05.Type: GrantFiled: August 28, 2017Date of Patent: September 7, 2021Assignee: OSRAM OLED GmbHInventors: Werner Bergbauer, Joachim Hertkorn
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Publication number: 20210265531Abstract: A light-emitting diode includes a semiconductor body and electrical connection points for contacting the semiconductor body, the semiconductor body including an active region including a quantum well that generates electromagnetic radiation, a first region and a second region that impede passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, the first region and the second region contain aluminum, and the active region emits electromagnetic radiation having a peak wavelength of less than 480 nm.Type: ApplicationFiled: May 7, 2021Publication date: August 26, 2021Inventors: Werner Bergbauer, Joachim Hertkorn, Alexander Walter
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Publication number: 20210210651Abstract: In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.Type: ApplicationFiled: March 19, 2021Publication date: July 8, 2021Inventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Patent number: 11018281Abstract: An optoelectronic semiconductor body includes an active region including a quantum well that generates electromagnetic radiation, a first region that impedes passage of charge carriers from the active region, and a second region that impedes passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, and the first region and the second region contain aluminum.Type: GrantFiled: June 26, 2017Date of Patent: May 25, 2021Assignee: OSRAM OLED GmbHInventors: Werner Bergbauer, Joachim Hertkorn, Alexander Walter
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Patent number: 11018277Abstract: A semiconductor layer sequence and a method for producing a semiconductor layer sequence are disclosed. In an embodiment a semiconductor layer sequence includes a first nitridic compound semiconductor layer, an intermediate layer, a second nitridic compound semiconductor layer and an active layer, wherein the intermediate layer comprises an AlGaN layer with an Al content of at least 5%, wherein the second nitridic compound semiconductor layer has a lower proportion of Al than the AlGaN layer such that relaxed lattice constants of the AlGaN layer of the intermediate layer and of the second nitridic compound semiconductor layer differ, wherein the second nitridic compound semiconductor layer and the active layer are grown on the intermediate layer in a lattice-matched manner, wherein the active layer comprises one or more layers of AlInGaN, and wherein an In content in each of the layers of AlInGaN is at most 12%.Type: GrantFiled: October 24, 2017Date of Patent: May 25, 2021Assignee: OSRAM OLED GMBHInventors: Werner Bergbauer, Lise Lahourcade, Jürgen Off
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Patent number: 11005003Abstract: A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region, a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface and a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.Type: GrantFiled: April 15, 2019Date of Patent: May 11, 2021Assignee: OSRAM OLED GMBHInventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Patent number: 10950752Abstract: A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.Type: GrantFiled: February 22, 2017Date of Patent: March 16, 2021Assignee: OSRAM OLED GmbHInventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Lise Lahourcade, Philipp Drechsel
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Patent number: 10862003Abstract: A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.Type: GrantFiled: May 18, 2017Date of Patent: December 8, 2020Assignee: OSRAM OLD GMBHInventors: Thomas Lehnhardt, Werner Bergbauer, Jürgen Off, Lise Lahourcade, Philipp Drechsel
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Patent number: 10840411Abstract: A semiconductor layer sequence is disclosed. In an embodiment the semiconductor layer sequence includes an n-conducting n-region, a p-conducting p-region and an active zone having at least one quantum well located between the n-region and the p-region, wherein the semiconductor layer sequence includes AlInGaN, wherein the n-region comprises a superlattice, wherein the superlattice has a structural unit which repeats at least three times, wherein the structural unit comprises at least one AlGaN layer, at least one GaN layer and at least one InGaN layer, wherein an intermediate layer is disposed between the active zone and the superlattice, wherein the intermediate layer comprises either n-doped GaN or n-doped GaN together with n-doped InGaN so that the intermediate layer is free of aluminum, and wherein the intermediate layer directly adjoins the active zone and the superlattice.Type: GrantFiled: July 5, 2017Date of Patent: November 17, 2020Assignee: OSRAM OLED GmbHInventor: Werner Bergbauer
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Publication number: 20200335658Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.Type: ApplicationFiled: January 17, 2019Publication date: October 22, 2020Applicant: OSRAM OLED GmbHInventors: Philipp Drechsel, Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Joachim Hertkorn
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Publication number: 20200243716Abstract: A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.Type: ApplicationFiled: February 22, 2017Publication date: July 30, 2020Inventors: Werner Bergbauer, Thomas Lehnhardt, Jürgen Off, Lise Lahourcade, Philipp Drechsel
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Patent number: 10720549Abstract: In an embodiment a semiconductor layer sequence includes a pre-barrier layer including AlGaN, a pre-quantum well including InGaN having a first band gap, a multi-quantum well structure including a plurality of alternating main quantum wells of InGaN having a second band gap and main barrier layers of AlGaN or AlInGaN, wherein the second band gap is smaller than the first band gap and the main quantum wells are configured to generate a radiation having a wavelength of maximum intensity between 365 nm and 490 nm inclusive, a post-quantum well with a third band gap which is larger than the second band gap, a post-barrier layer including AlGaN or AlInGaN and an electron-blocking layer including AlGaN.Type: GrantFiled: September 4, 2017Date of Patent: July 21, 2020Assignee: OSRAM OLED GmbHInventors: Werner Bergbauer, Joachim Hertkorn
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Publication number: 20200119228Abstract: A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.Type: ApplicationFiled: May 18, 2017Publication date: April 16, 2020Applicant: OSRAM Opto Semiconductors GmbHInventors: Thomas Lehnhardt, Werner Bergbauer, Jürgen Off, Lise Lahourcade, Philipp Drechsel
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Publication number: 20200119227Abstract: A semiconductor layer sequence and a method for producing a semiconductor layer sequence are disclosed. In an embodiment a semiconductor layer sequence includes a first nitridic compound semiconductor layer, an intermediate layer, a second nitridic compound semiconductor layer and an active layer, wherein the intermediate layer comprises an AlGaN layer with an Al content of at least 5%, wherein the second nitridic compound semiconductor layer has a lower proportion of Al than the AlGaN layer such that relaxed lattice constants of the AlGaN layer of the intermediate layer and of the second nitridic compound semiconductor layer differ, wherein the second nitridic compound semiconductor layer and the active layer are grown on the intermediate layer in a lattice-matched manner, wherein the active layer comprises one or more layers of AlInGaN, and wherein an In content in each of the layers of AlInGaN is at most 12%.Type: ApplicationFiled: October 24, 2017Publication date: April 16, 2020Applicant: OSRAM Opto Semiconductors GmbHInventors: Werner BERGBAUER, Lise LAHOURCADE, Jürgen OFF