Abstract: This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E-O— or an E-S— bond where E is the group IV element (e.g. Si, Ge, etc.). The procedure has been successfully used on both P- and n-type group IV element surfaces. The assemblies are stable under ambient conditions and can be exposed to repeated electrochemical cycling.

Abstract: This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

Abstract: Embodiments of the present invention provide methods of treating a surface of a substrate. In one particular aspect, embodiments of the present invention provide methods of treating a surface of a substrate that promote binding of one or more metal elements to the surface. According to some embodiments of the invention, films are formed on any conducting, semiconductive or non-conductive surface, by thermal reaction of molecules containing reactive groups in an organic solvent or in aqueous solution. The thermal reaction may be produced under a variety of conditions. In another aspect, the present invention provides a printed circuit board, comprising: at least one substrate; a layer of organic molecules attached to the at least one substrate; and a metal layer atop said layer of organic molecules.

Abstract: The present invention generally relates to methods of treating a surface of a substrate, and to the use of the method and resulting films, coatings and devices formed therefrom in various applications including but not limited to electronics manufacturing, printed circuit board manufacturing, metal electroplating, the protection of surfaces against chemical attack, the manufacture of localized conductive coatings, the manufacture of chemical sensors, for example in the fields of chemistry and molecular biology, the manufacture of biomedical equipment, and the like. In another aspect, the present invention provides a printed circuit board, a printed circuit board, comprising: at least one metal layer; a layer of organic molecules attached to the at least one metal layer; and an epoxy layer atop said layer of organic molecules.

Abstract: Molecular memories, i.e., memories that incorporate molecules for charge storage, are disclosed. Molecular memory cells, molecular memory arrays, and electronic devices including molecular memory are also disclosed, as are processing systems and methods for manufacturing molecular memories. Methods of manufacturing molecular memories that enable semiconductor devices and interconnections to be manufactured monolithically with molecular memory are also disclosed.

Abstract: This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E-O— or an E-S— bond where E is the group IV element (e.g. Si, Ge, etc.). The procedure has been successfully used on both P- and n-type group IV element surfaces. The assemblies are stable under ambient conditions and can be exposed to repeated electrochemical cycling.

Abstract: This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a method is provided that involves contacting a surface/electrode with a compound of formula: R-L2-M-L1-Z1 where Z1 is a surface attachment group; L1 and L2 are independently linker or covalent bonds; M is an information storage molecule; and R is a protected or unprotected reactive site or group; where the contacting results in attachment of the redox-active moiety to the surface via the surface attachment group; and ii) contacting the surface-attached information storage molecule with an electrolyte having the formula: J-Q where J is a charged moiety (e.g., an electrolyte); and Q is a reactive group that is reactive with the reactive group (R) and attaches J to the information storage molecule thereby patterning the electrolyte on the surface.

Abstract: A molecular memory element comprising a switching device; at least a first bit line and a first word line coupled to said switching device; and an array of storage locations, each coupled to a bit line and a word line, said elements comprising a first electrode with storage molecules comprising redox active molecules, and said array comprising a second electrode.

Abstract: This invention provides a new design and fabrication for a three-dimensional crossbar architecture embedding a sub-micron or nanometer sized hole (called a molehole) in each cross-region. Each molehole is an electrochemical cell consisting of two or more sectional surfaces separated by a non-conductor (e.g. a dialectric layer and solid electrolyte). When used in electrochemical molecular memory device (EMMD), the architecture provides unique features such as a nano-scale electroactive surface, no interaction between memory elements, and easier miniaturization and integration.

Abstract: This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

Abstract: This invention provides novel high density memory devices (FIG. 3) that are electrically addressable permitting effective reading and writing, that provide a high memory density (102), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices arc intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

Abstract: This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode. The storage medium typically comprises a storage molecule that is a triple-decker sandwich heterodimer. Such dimers can provide 8 or more oxidation states and permit the storage of at least 3 bits per molecule.

Abstract: A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.

Abstract: This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

Abstract: This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode. The storage medium typically comprises a storage molecule that is a triple-decker sandwich heterodimer. Such dimers can provide 8 or more oxidation states and permit the storage of at least 3 bits per molecule.

Abstract: A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.

Abstract: This invention provides novel approach to the specific detection of redox-active moieties (e.g.) in a population of redox-active moieties. In particular this invention provides a “phase-nulling” technique that can be used in the electrochemical detection of redox-active tags. The signal for each tag is selectively eliminated while the other tag's response remains virtually unchanged. This novel analysis scheme allows for the simple identification of a tag of interest in a complex matrix and is demonstrated with both flow injection analysis and capillary gel electrophoresis.

Abstract: This invention provides a new design and fabrication for a three-dimensional crossbar architecture embedding a sub-micron or nanometer sized hole (called a molehole) in each cross-region. Each molehole is an electrochemical cell consisting of two or more sectional surfaces separated by a non-conductor (e.g. a dialectric layer and solid electrolyte). When used in electrochemical molecular memory device (EMMD), the architecture provides unique features such as a nano-scale electroactive surface, no interaction between memory elements, and easier miniaturization and integration.

Abstract: This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E—O— or an E—S— bond where E is the group IV element (e.g. Si, Ge, etc.). The procedure has been successfully used on both P- and n-type group IV element surfaces. The assemblies are stable under ambient conditions and can be exposed to repeated electrochemical cycling.

Abstract: This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.