Patents by Inventor Werner Irlbacher

Werner Irlbacher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR PRODUCING POLYSILICON RESISTORS
    Publication number: 20170194417
    Abstract: A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.
    Type: Application
    Filed: March 22, 2017
    Publication date: July 6, 2017
    Inventors: Hermann Gruber, Thomas Gross, Werner Irlbacher, Markus Zundel, Mathias von Borcke, Hans Joachim Schulze
  • Methods for producing polysilicon resistors
    Patent number: 9634081
    Abstract: A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: April 25, 2017
    Assignee: Infineon Technologies AG
    Inventors: Hermann Gruber, Thomas Gross, Werner Irlbacher, Markus Zundel, Mathias von Borcke, Hans Joachim Schulze
  • METHODS FOR PRODUCING POLYSILICON RESISTORS
    Publication number: 20150099341
    Abstract: A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.
    Type: Application
    Filed: October 8, 2013
    Publication date: April 9, 2015
    Applicant: Infineon Technologies AG
    Inventors: Hermann Gruber, Thomas Gross, Werner Irlbacher, Markus Zundel, Mathias von Borcke, Hans Joachim Schulze