Abstract: In one embodiment a method for manufacturing a semiconductor device comprises arranging a wafer on a carrier, the wafer comprising singulated chips; bonding the singulated chips to a support wafer, and removing the carrier.

Abstract: In one embodiment a method for manufacturing a semiconductor device comprises arranging a wafer on a carrier, the wafer comprising singulated chips; bonding the singulated chips to a support wafer, and removing the carrier.

Abstract: A semiconductor module includes components in a plastic casing. The semiconductor module includes a plastic package molding compound and a semiconductor chip. Also provided in the module are a first principal surface including an upper side of the plastic package molding compound and at least one active upper side of the semiconductor chip, a second principal surface including a back side of the plastic package molding compound, and a multilayered conductor track structure disposed on the first principal surface and a second metal layer disposed on the second principal surface.

Abstract: A semiconductor module (1) has components (6) for microwave engineering in a plastic casing (7). The semiconductor module (1) has a principal surface (8) with an upper side (9) of a plastic package molding compound (10) and at least one active upper side (11) of a semiconductor chip (12). Disposed on the principal surface (8) is a multilayered conductor track structure (13) which alternately comprises structured metal layers (14, 15) and structured insulation layers (16, 17), where at least one of the insulation layers (16, 17) and/or the plastic package molding compound (10) has at least one microwave insulation region.

Abstract: A power amplifier comprises a control signal generator providing a first and a second signal, a first amplifier comprising a first transistor and a first cascode transistor for the amplification of the first signal, a second amplifier comprising a second transistor and a second cascode transistor for the amplification of the second signal, and an output coupler which couples an output of the first amplifier and an output of the second amplifier to an output terminal of the amplifier arrangement.

Abstract: A semiconductor module includes components in a plastic casing. The semiconductor module includes a plastic package molding compound and a semiconductor chip. Also provided in the module are a first principal surface including an upper side of the plastic package molding compound and at least one active upper side of the semiconductor chip, a second principle surface including a back side of the plastic package molding compound, and a multilayered conductor track structure disposed on the first principal surface and a second metal layer disposed on the second principle surface.

Abstract: A power amplifier comprises a control signal generator providing a first and a second signal, a first amplifier comprising a first transistor and a first cascode transistor for the amplification of the first signal, a second amplifier comprising a second transistor and a second cascode transistor for the amplification of the second signal, and an output coupler which couples an output of the first amplifier and an output of the second amplifier to an output terminal of the amplifier arrangement.

Abstract: A multiplicity of nanotubes are applied to at least one external chip metal contact of an electronic chip in order to make contact between the electronic chip and a further electronic chip.

Abstract: A semiconductor module (1) has components (6) for microwave engineering in a plastic casing (7). The semiconductor module (1) has a principal surface (8) with an upper side (9) of a plastic package molding compound (10) and at least one active upper side (11) of a semiconductor chip (12). Disposed on the principal surface (8) is a multilayered conductor track structure (13) which alternately comprises structured metal layers (14, 15) and structured insulation layers (16, 17), where at least one of the insulation layers (16, 17) and/or the plastic package molding compound (10) has at least one microwave insulation region.

Abstract: A monolithic integrated transformer, especially for high frequency application in for example GSM-mobile components wherein a coupling factor is attained by using slotted windings and components introduced therein from another winding. The transformer can be produced according to standard silicon bipolar technology with three metallic layers. The production of the transformer do not involve any additional expenditures.