Abstract: This disclosure relates to plasma processing for photovoltaic device manufacturing. Particularly to a plasma processing system that includes an electrode that allows gas to pass through into the process chamber that includes a substrate. A gas barrier component may be used to minimize parasitic plasma occurring at the edges of the electrode by preventing process gas reaching the edge of the chamber or from entering the process chamber by going around the electrode. The gas barrier component may be made of a non-conductive flexible material that forms a fluidic seal between the electrode and the chamber. In other embodiments, the gas barrier may also support isolation grids that are disposed opposite of the electrode and prevent the isolation grids from moving.

Abstract: A plasma reactor (1) for treating a substrate (40), comprises at least two electrodes (20, 30) arranged within the reactor (1) defining an internal process space (13) there between, whereas the two electrodes (20, 30) are located opposed to each other and parallel with respect to a first surface (20a) of the electrodes (20, 30). Further it comprises a gas inlet (11) and a gas outlet (12) for transporting gas in and out of the plasma reactor (1), a radiofrequency generator (21) connected to at least one of the electrodes (20, 30).

Abstract: This disclosure relates to a flexible triplate stripline that can operate in temperatures of 150 C-250 C, flexible to move up/down with the top of a plasma reactor, and prevent plasma generation near the power transmission line in the stripline. The transmission line may be exposed to ambient conditions. The risk of generating plasma near the transmission line may be minimized by optimizing the height and width of the air gap adjacent to the transmission line and decreasing the voltage in a portion of the stripline by widening the transmission line.

Abstract: A substrate processing system includes a vertically movable chamber section so that chamber sections are vertically separable to provide open and closed positions of a processing chamber or reactor, such as a plasma enhanced CVD chamber. In the open position, substrates are loaded and unloaded from the processing chamber, while in the closed position an enclosed processing volume is provided for processing substrates, particularly for processing large substrates (e.g., one square meter or larger) with a small gap (3-10 mm) between electrodes. Plural processing chambers can be provided and coupled to an actuator assembly for simultaneously vertically moving a chamber section or chamber portion of each processing chamber. Lift pins for receiving and positioning of substrates within the processing chambers can also be moved by the actuator assembly. A removable mounting arrangement is also provided for the lift pins.

Abstract: A vacuum treatment installation has a vacuum receptacle with a first planar metallic electrode face, a second dielectric electrode face facing the first planar metallic electrode face which forms a surface of a dielectric areal configuration, a metallic coupling face facing a backside of the areal configuration, electric connections on the coupling and on the first electrode face, a gas line system through the coupling face and an areal distributed pattern of apertures through the areal configuration and wherein the areal dielectric configuration is formed by several ceramic tiles.

Abstract: A plasma reactor (1) for treating a substrate (40), comprises at least two electrodes (20, 30) arranged within the reactor (1) defining an internal process space (13) there between, whereas the two electrodes (20, 30) are located opposed to each other and parallel with respect to a first surface (20a) of the electrodes (20, 30). Further it comprises a gas inlet (11) and a gas outlet (12) for transporting gas in and out of the plasma reactor (1), a radiofrequency generator (21) connected to at least one of the electrodes (20, 30).

Abstract: A vacuum treatment installation has a vacuum receptacle with a first planar metallic electrode face, a second dielectric electrode face facing the first planar metallic electrode face which forms a surface of a dielectric areal configuration, a metallic coupling face facing a backside of the areal configuration, electric connections on the coupling and on the first electrode face, a gas line system through the coupling face and an areal distributed pattern of apertures through the areal configuration and wherein the areal dielectric configuration is formed by several ceramic tiles.

Abstract: A method for producing a disk shaped workpiece with a dielectric substrate includes treatment in a plasma process volume between two electrode faces bounding a high-frequency plasma discharge. One electrode face is of dielectric material and is at a high-frequency potential with a varying distribution along the face. The other electrode face is metallic. Reactive gas is introduced into the process volume through an aperture pattern. The dielectric substrate, before treatment, is at least regionally coated with a layer material to whose specific resistance applies: 10?5 ?cm??10?1 ?cm, and to the resulting surface resistance RS of the layer applies: 0<RS?104 ?. Subsequently, the coated substrate is positioned on the metallic electrode face and is etched or coated reactively under plasma enhancement in the plasma process volume.

Abstract: A method for producing a disk shaped workpiece with a dielectric substrate includes treatment in a plasma process volume between two electrode faces bounding a high-frequency plasma discharge. One electrode face is of dielectric material and is at a high-frequency potential with a varying distribution along the face. The other electrode face is metallic. Reactive gas is introduced into the process volume through an aperture pattern. The dielectric substrate, before treatment, is at least regionally coated with a layer material to whose specific resistance applies: 10?5 ?cm??10?1 ?cm, and to the resulting surface resistance Rs of the layer applies: 0<Rs?104 ?. Subsequently, the coated substrate is positioned on the metallic electrode face and is etched or coated reactively under plasma enhancement in the plasma process volume.

Abstract: The electrochemical sensor for determination of an oxygen content of exhaust gases, includes a probe element including a tube made from a raw material mixture consisting essentially of an ionically conductive solid electrolyte; an outer electrode located on the outer surface of the tube; a substantially pore-free conductor strip layer located on the outer surface, connected to the outer electrode, and extending toward the open end, the conductor strip layer having a portion in close proximity to the tube open end; and a substantially pore-free cover layer hermetically covering at least the portion of the pore-free conductor strip layer in close proximity to the open end of the tube, the cover layer being made from a cover layer material including the ionically conductive solid electrolyte. The cover layer material advantageously a sintering activity which is at least equal to that of the raw material mixture from which the tube is made.

Abstract: An electrochemical measuring sensor is proposed for determining the oxygen content in exhaust gases which has a base body made of an ion-conducting solid electrolyte in the form of a tube closed at one end, an inner electrode, an outer electrode disposed on the external surface of the probe block and having a conductor track on the connection side which has a covering layer, a ceramic protective layer and a metallic sealing ring for sealing the reference space from the exhaust gas space and for making an electrical contact to the housing in which the measuring sensor is to be inserted. The electrochemical covering layer covering the conductor track is brought down on the reference side of the probe block to below the metallic sealing ring and the track is formed with uncovered lateral extensions making electrical contact with the ring. This makes it possible to significantly prolong the service life of the measuring sensor.

Abstract: A housing for circular piston combustion engines of trochoid type is produced with at least one annular shell having an inner peripheral wall in the shape of a multi-arcuate trochoid, an outer peripheral wall, and end walls parallel to each other and adjoined to the ends of the shell, end pieces parallel to each other having end walls parallel to each other and an inner and an outer peripheral wall. In the case of a multiple engine at least one end piece constitutes a middle piece between neighboring shells.

Abstract: A housing for circular piston combustion engines of trochoid type is produced with at least one annular shell having an inner peripheral wall in the shape of a multi-arcuate trochoid, an outer peripheral wall, and end walls parallel to each other and adjoined to the ends of the shell, end pieces parallel to each other having end walls parallel to each other and an inner and an outer peripheral wall. In the case of a multiple engine at least one end piece constitutes a middle piece between neighboring shells.