Abstract: The invention provides a low mass and size thermal focusing device for a gas phase analytical device. The device has two or more plates bonded together. The device also has at least one channel with an entrance and exit is formed within allowing ingress and egress of a gas stream. The device also has a temperature reduction module in thermal contact with at least one plate of the device. Thermal focusing devices with additional plates and/or channels are also disclosed.

Abstract: A system and method for substantially continuous fraction collection includes a control device and a fluidic switch. The control device selects the state of the fluidic switch, and thereby determines which of a plurality of output ports effluent will exit.

Abstract: A seal forming a fluid tight connection between a gas chromatography column and a sample inlet assembly is disclosed. The seal is formed by a metal injection molding process. The seal has a first surface adapted for sealing with the sample inlet assembly and a second surface adapted for sealing with the column. The seal has an aperture extending between the first and second surfaces. A method of sealing a connection between a gas chromatography sample inlet assembly and a gas chromatography column is also disclosed. The method includes providing a seal as described above, compressing the first surface of the seal against an end of the inlet assembly, positioning the column in fluid communication with the aperture, and engaging the column with the second surface.

Abstract: A fluid coupling comprises a fitting body, and a chamber within the fitting body, the chamber having at least one fluid conduit receiver bore and a restricted portion, the fluid conduit receiver bore configured to minimize unswept volume in the chamber.

Abstract: A connector element for use with analytical devices is provided. The connector element includes a cavity for receiving a sealing member, and an access element for providing access to the sealing member when disposed in the cavity, e.g., for dislodging the sealing member from the connector element. Also provided are analytical devices that include the connector element, as well as methods of using the same.

Abstract: The invention provides a low mass and size thermal focusing device for a gas phase analytical device. The device has two or more plates bonded together. The device also has at least one channel with an entrance and exit is formed within allowing ingress and egress of a gas stream. The device also has a temperature reduction module in thermal contact with at least one plate of the device. Thermal focusing devices with additional plates and/or channels are also disclosed.

Abstract: The invention provides a low mass and size thermal focusing device for a gas phase analytical device. The device has two or more plates bonded together. The device also has at least one channel with an entrance and exit is formed within allowing ingress and egress of a gas stream. The device also has a temperature reduction module in thermal contact with at least one plate of the device. Thermal focusing devices with additional plates and/or channels are also disclosed.

Abstract: A fluid coupling comprises a fitting body feature, a compression nut configured to fit within the fitting body feature, and a ferrule configured to seal a tube against the fitting body feature, whereby an end of the tube extends beyond the ferrule into a volume formed by the fitting body feature and the ferrule so that the volume is swept by a flow through the tube.

Abstract: The invention provides a low mass and size thermal focusing device for a gas phase analytical device. The device has two or more plates bonded together. The device also has at least one channel with an entrance and exit is formed within allowing ingress and egress of a gas stream. The device also has a temperature reduction module in thermal contact with at least one plate of the device. Thermal focusing devices with additional plates and/or channels are also disclosed.

Abstract: The invention provides a low mass and size thermal focusing device for a gas phase analytical device. The device has two or more plates bonded together. The device also has at least one channel with an entrance and exit is formed within allowing ingress and egress of a gas stream. The device also has a temperature reduction module in thermal contact with at least one plate of the device. Thermal focusing devices with additional plates and/or channels are also disclosed.

Abstract: A method and corresponding system provide a tortuous path, which functions as restrictors or filters, in diffusion bonded plates for fluid handing. Fluid includes gases, liquids and all types of sample fluids. The method constructs various restrictive elements and etches the restrictive elements into one or more substrates. The substrates are then bonded together using diffusion bonding technology to form fluid flow channels with integrated tortuous paths (functioning as restrictors or filters). The method thus provides a restricting or filtering device that is monolithically integrated into a fluid handling system. The filtering device can also be used as a backup to an external filter to prevent contaminating particles from entering delicate mechanisms of the fluid handling system.

Abstract: An integrated injection logic circuit cell structure and its fabrication are simplified. A pattern of oxide isolation regions is used to define, at least partially, the introduction of two types of impurities in such a way as to reduce the number of masking steps. Certain of these oxide regions do not penetrate through the conventional epitaxial layer, leaving a lateral buried path to serve as the base of a lateral injection transistor. A pattern of polycrystalline silicon containing impurities is used both as a diffusion source and an interconnection.

Abstract: A method of making an oxide isolated integrated circuit structure is simplified by forming a first level metallization pattern without the conventional underlying insulating layer and without the need for restricting the size of the metallization to the size of the semiconductor regions to be contacted. Portions of the first level metallization pattern can extend on the oxide isolation region to contact two otherwise isolated semiconductor zones. Additionally, subsequent to the formation of the oxide isolation regions and the first level metallization, an intermediate dielectric masking pattern is formed so the combination of the first level metallization, the oxide isolation regions and the masking pattern defines zones for the introduction of impurities. Further, the masking pattern alone is used to provide contact holes for a subsequently formed second level metallization pattern.