Abstract: A method of patterning an X-ray master mask (21) is described by using reduction projection. An X-ray mask (21) is provided with a photoactive material coating a plating base layer (24). The X-ray mask (21) is positioned under the reduction projection tool. The photoactive material on the X-ray mask (21) is exposed from a pattern (13) in the reduction projection tool.

Abstract: A method for performing multiple field parallel processing in x-ray lithography uses a coupled mirror assembly (30) and a coupled mask assembly (22) to define and print multiple fields (54 & 54') in one step. The coupled mirror assembly (30) has multiple mirrored surfaces (34). The coupled mask assembly (22) has as many masks (44) as there are mirrored surfaces (34). The number of masks in the mask assembly define the number image fields that can be printed in parallel during a single exposure step. Thus, the overall cycle time for lithographically exposing an entire semiconductor wafer surface is inversely proportional to the number of parallel image fields.

Abstract: An x-ray interface (40) provides increased x-ray collection efficiency for use in x-ray photolithography. The interface (40) comprises a housing (44) having a plurality of mirrored funnels (46) for collecting the x-rays. The mirrored funnels (46) are shaped to partially collimate and focus the x-rays. The interface (40) collects a greater percentage of the available x-rays from an x-ray source, and the interface (40) also permits a greater number of beamlines to be coupled to the x-ray source.

Abstract: A method for alignment in photolithographic processes includes providing a target (31) comprising features having a characteristic spatial period (P). An optical image of the target is captured, and components (33) of the image lacking the characteristic spatial period (P) are filtered out. The filtered image is integrated in the direction of the characteristic period (P) thereby creating an alignment signal (40). The alignment signal (40) is a symmetric signal which correlates to the symmetric target (31). A linear centroid (41) of the alignment signal is located, and corresponds to the precise linear center of the target (31). Consequently, the linear location of an object (10) upon which the target (31) is printed, can be accurately located. The process is performed in two perpendicular dimensions (x,y) so that the object (10) can be precisely located and positioned in two dimensions (x,y).

Abstract: An alignment signal is analyzed asymmetrically using any means of artificial intelligence or similar logic to apply empirical or theoretical offsets to signal position calculations based on the unique signal shapes of the different signals collected. A database of signal shapes and correlated offsets is used to improve subsequent alignment steps. For example, a case-based reasoning method can be used.

Abstract: A method of actinic aligning semiconductor wafers which are coated with a contrast enhancement material is provided, wherein an alignment target formed on a semiconductor substrate which is coated with photoresist and contrast enhancement material is exposed to actinic wavelength light, while protecting active device areas from exposure. The contrast enhancement material over the alignment target is thus bleached so that the underlying alignment target becomes visible to actinic wavelength light. A pattern comprising an alignment pattern and an active device pattern is projected onto the wafer. The now visible alignment target is aligned to the projected alignment pattern with sub-exposure energy actinic light using conventional techniques and an actinic alignment tool, and the active device pattern subsequently exposed at an exposure energy of the actinic wavelength once the alignment is completed.

Abstract: The contrast of a photoresist layer used in a lithographic process for a given light source is optimized by determining the nonlinear relationship of the photoresist contrast with regard to the thickness thereof and then placing over a substrate a thickness of photoresist corresponding to a desired value of contrast indicated by the nonlinear relationship of contrast with photoresist thickness. The nonlinear contrast with regard to photoresist thickness function is a damped, sinusoidal like function with the difference between maxima and minima contrast values decreasing as the photoresist thickness increases and with higher absolute maxima values for contrast as photoresist thickness decreases.