Abstract: An electronic pedal apparatus includes a pad that rectilinearly moves and rotates along a pad guide while being kept in line contact with the pad guide including a shape of an arc when a driver operates the pad, an acceleration signal or a braking signal for a vehicle is generated by operation of the single pad, and a movement direction of the pad at the time of generating the acceleration signal is different from a movement direction of the pad at the time of generating the braking signal.

Abstract: An embodiment electronic pedal apparatus includes a pedal housing and an accelerator pedal assembly and a brake pedal assembly coupled to the pedal housing and configured to move along different movement trajectories when the accelerator pedal assembly and the brake pedal assembly are operated. In an embodiment, the accelerator pedal assembly is compressed and moved upward when the accelerator pedal assembly is operated, and the brake pedal assembly is compressed and moved downward when the brake pedal assembly is operated.

Abstract: A complementary metal oxide semiconductor image sensor and a method for fabricating the same are disclosed, wherein a width of a depletion area of a photodiode is varied by variably applying a back bias voltage to a semiconductor substrate without using any color filter, thereby preventing a back bias voltage from influencing a transistor formed on the outside of a photodiode in a CMOS image sensor sensing optical color sensitivity of light rays irradiated to the photodiode.

Abstract: A CMOS image sensor and a method for detecting color sensitivity of red, green and blue light without using a color filter layer is disclosed, which includes a semiconductor substrate having an active region; a photodiode formed in the active region of the semiconductor substrate, and generating an optical electric charge in accordance with irradiation of light; an insulating interlayer formed on an entire surface of the semiconductor substrate; and a micro lens formed on the insulating interlayer in perpendicular to the photodiode, wherein, a back-bias voltage is applied to the semiconductor substrate to vary a width of a depletion area of the photodiode.

Abstract: A complementary metal oxide semiconductor image sensor and a method for fabricating the same are disclosed, wherein a width of a depletion area of a photodiode is varied by variably applying a back bias voltage to a semiconductor substrate without using any color filter, thereby preventing a back bias voltage from influencing a transistor formed on the outside of a photodiode in a CMOS image sensor sensing optical color sensitivity of light rays irradiated to the photodiode.