Abstract: A cleaning method and apparatus using very dilute hydrofluoric acid (BF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.

Abstract: A method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity. The film thickness monitor comprises a spectrometer.

Abstract: An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

Abstract: A method and apparatus for rotating wafers in a scrubber, wherein both sides of a wafer are scrubbed without slipping or hesitating. A rotating roller imparts rotary motion to a semiconductor wafer during a cleaning process wherein both sides of a wafer are scrubbed. The rotating roller and wafer contact at their outer edges and the friction between their outer edges causes the wafer to rotate. The roller has an outer edge with a groove. The wafer edge is pinched inside the groove to create enough friction that when cleaning solutions are applied the wafer does not slip and continues to rotate. Also, the groove allows the roller to pinch the wafer just enough so that when the roller reaches the flat of the wafer, the roller may regain the radius of the wafer without hesitating.

Abstract: A cleaning method and apparatus using very dilute hydrofluoric acid (HF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.

Abstract: A method and apparatus for cleaning edges of substrates is described. The present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based on friction and/or a difference in tangential velocity at a point of contact between the wafer and the cleaning mechanism.

Abstract: A drip chemical delivery system used in semiconductor substrate cleaning processes. A drip chemical delivery system which uses small openings in a pipe (holes) and a low air pressure to saturate the brushes in a double sided brush system. This drip delivery system reduces the volumes of chemical solutions used in a scrubbing process and helps to maintain control of the pH profile of a substrate. This system is described and illustrated in the manner it is used in conjunction with a double sided scrubber.

Abstract: A method and apparatus for rotating wafers in a double sided scrubber without slipping or hesitating. A rotating roller imparts rotary motion to a semiconductor wafer during a double sided cleaning process. The rotating roller and wafer contact at their outer edges and the friction between their outer edges causes the wafer to rotate. The roller has an outer edge with a groove. The wafer edge is pinched inside the groove to create enough friction that when cleaning solutions are applied the wafer does not slip and continues to rotate. Also, the groove allows the roller to pinch the wafer just enough so that when the roller reaches the flat of the wafer, the roller may regain the radius of the wafer without hesitating.

Abstract: A method for achieving greater uniformity and control in vapor phase etching of silicon, silicon oxide layers and related materials associated with wafers used for semiconductor devices comprises the steps of first cleaning the wafer surface to remove organics, followed by vapor phase etching. An integrated apparatus for cleaning organic and, subsequently, vapor phase etching, is also described.In embodiments of the invention cooling steps are incorporated to increase throughput, an on-demand vaporizer is provided to repeatably supply vapor at other than azeotropic concentration, and a residue-free etch process is provided.

Abstract: A megasonic bath with horizontal wafer orientation that may be conveniently interfaced with brush scrub systems. The megasonic transducer creates a sonic energy flow in the direction of the wafers. The sonic energy causes cavitation which loosens and displaces particles from the surface of the wafers. Water jets produce a horizontal flow across the wafer surfaces. The horizontal flow created by the water jets keeps the wafer surfaces wet, exposes the surfaces to fresh chemicals, and removes the particles which have been displaced or loosened by the sonic energy.

Abstract: A drip chemical delivery system used in semiconductor substrate cleaning processes. A drip chemical delivery system which uses small openings in a pipe (holes) and a low air pressure to saturate the brushes in a double sided brush system. This drip delivery system reduces the volumes of chemical solutions used in a scrubbing process and helps to maintain control of the pH profile of a substrate. This system is described and illustrated in the manner it is used in conjunction with a double sided scrubber.

Abstract: A process for brush cleaning used in semiconductor wafer scrubbing systems. A process for brush cleaning that eliminates and/or reduces the load-up of brushes with contaminants. This brush cleaning process changes the pH level of a brush to repel contaminants that are on the brush. This process extends the useful life of the brush without significantly decreasing the throughput of the scrubbing system.

Abstract: A method for depositing silicon dioxide on the surface of a substrate or the like using a nitrogen-containing precursor is disclosed herein. In a preferred implementation the deposition is performed using an atmospheric pressure reactor, into which is directed toward the substrate surface a stream of source gas comprised of ozonated oxygen. A stream of a nitrogen-containing precursor such as, for example, hexamethyldisilazane (HMDS) is also directed into the reactor toward the substrate surface. In addition, a stream of a nitrogen-containing separator gas is directed into the reactor between the streams of precursor and source gases. The inventive deposition method has been shown to result in improved film nucleation on a variety of substrate surfaces.