Abstract: A quadrature modulator and a method of calibrating same by applying a first test tone signal to an in-phase modulation branch input of the modulator and a ninety degree phase-shifted version of the first test tone signal to a quadrature modulation branch input of the modulator. The carrier leakage level in an output signal of the modulator is measured and in response base band dc offset voltages are adjusted to minimize the carrier leakage. A second test tone signal is applied to the in-phase modulation branch input and a ninety degree phase-shifted version of the second test tone signal to the quadrature modulation branch input. The level of an undesired upper sideband frequency component in the output signal is measured and in response base band gains the in-phase and quadrature modulation branches and a local oscillator phase error are adjusted to minimize the undesired sideband.

Abstract: A method of manufacturing a semiconductor device which starts with a semiconductor wafer (1) which is provided with a layer of semiconductor material (4) lying on an insulating layer (3) at a first side (2). Semiconductor elements (5) and conductor tracks (14) are formed on this first side (2) of the semiconductor wafer (1). Then the semiconductor wafer (1) is fastened with this first side (2) to a support wafer (15), and material (18) is removed from the semiconductor wafer (1) from its other, second side (17) until the insulating layer (3) has been exposed. The method starts with a semiconductor wafer (1) whose insulating layer (3) is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.

Abstract: A method of manufacturing a semiconductor device which starts with a semiconductor wafer which is provided with a layer of semiconductor material lying on an insulating layer at a first side. Semiconductor elements and conductor tracks are formed on this first side of the semiconductor wafer. Then the semiconductor wafer is fastened with this first side to a support wafer, and material is removed from the semiconductor wafer from its other, second side until the insulating layer has been exposed. The method starts with a semiconductor wafer whose insulating layer is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.