Abstract: A photovoltaic cell includes a silicon substrate having two opposite main surfaces. A first main surface of the two main surfaces is covered with a passivation layer stack, including a POx- and Al-including-layer covering the first main surface, and a capping layer which covers the POx- and Al-including-layer. A method for manufacturing a photovoltaic cell is also disclosed.

Abstract: A photovoltaic cell is disclosed comprising a silicon substrate having two opposite main surfaces, wherein a first main surface of the two main surfaces is covered with a passivation layer stack, comprising a POx- and Al-comprising-layer covering the first main surface, and a capping layer which covers the POx- and Al-comprising-layer. Also disclosed is a method for manufacturing a photovoltaic cell.

Abstract: A solar cell includes a semiconductor layer, a collecting layer for collecting free charge carriers from the semiconductor layer and a buffer layer which is arranged between the semiconductor layer and the collecting layer. The buffer layer is designed as a tunnel contact between the semiconductor layer and the collecting layer. The buffer layer essentially includes a material with a surface charge density of at least 1012 cm?2, preferably of at least 5×1012 cm?2, and more preferably of at least 1013 cm?2.

Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminium oxide, aluminium nitride or aluminium oxynitride and at least one further element.

Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

Abstract: The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

Abstract: A method of forming an Al2O3/SiO2 stack comprising injecting into the reaction chamber, through an ALD process, at least one silicon containing compound selected from the group consisting of: BDEAS Bis(diethylamino)silane SiH2(NEt2)2, BDMAS Bis(dimethylamino)silane SiH2(NMe2)2, BEMAS Bis(ethylmethylamino)silane SiH2(NEtMe)2, DIPAS (Di-isopropylamido)silane SiH3(NiPr2), DTBAS (Di tert-butylamido)silane SiH3(NtBu2); injecting into the reaction chamber an oxygen source selected in the list: oxygen, ozone, oxygen plasma, water, CO2 plasma, N2O plasma; and injecting on said silicon oxide film, through an ALD process, at least one aluminum containing compound selected in the list: Al(Me)3, Al(Et)3, Al(Me)2(OiPr), Al(Me)2(NMe)2 or Al(Me)2(NEt)2.

Abstract: The invention relates to a method for forming microscopic structures. By scanning a focused particle beam over a substrate in the presence of a precursor fluid, a patterned seed layer is formed. By now growing this layer with Atomic Layer Deposition or Chemical Vapor Deposition, a high quality layer can be grown. An advantage of this method is that forming the seed layer takes relatively little time, as only a very thin layer needs to be deposited.

Abstract: The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

Abstract: A solar cell includes a semiconductor layer, a collecting layer for collecting free charge carriers from the semiconductor layer and a buffer layer which is arranged between the semiconductor layer and the collecting layer. The buffer layer is designed as a tunnel contact between the semiconductor layer and the collecting layer. The buffer layer essentially includes a material with a surface charge density of at least 1012 cm?2, preferably of at least 5×1012 cm?2, and more preferably of at least 1013 cm?2.

Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminium oxide, aluminium nitride or aluminium oxynitride and at least one further element.

Abstract: A solar cell includes a semiconductor layer with first doping, an inducing layer arranged on the semiconductor layer and an inversion layer or accumulation layer which due to the inducing layer is induced underneath the inducing layer in the semiconductor layer. The inducing layer includes a material with a surface charge density of at least 1012 cm?2, preferably of at least 5×1012 cm?2, more preferably of at least 1013 cm?2.

Abstract: The invention relates to a method for forming microscopic structures. By scanning a focused particle beam over a substrate in the presence of a precursor fluid, a patterned seed layer is formed. By now growing this layer with Atomic Layer Deposition or Chemical Vapour Deposition, a high quality layer can be grown. An advantage of this method is that forming the seed layer takes relatively little time, as only a very thin layer needs to be deposited.

Abstract: In a method and device for etching a substrate by a plasma, the plasma is generated and accelerated at substantially sub-atmospheric pressure between a cathode and an anode of a plasma source (1) in a channel of system of at least one conductive cascaded plate between the cathode and anode. The plasma is released from the plasma source to a treatment chamber (2) in which the substrate (9) is exposed to the plasma. The treatment chamber is sustained at a reduced, near vacuum pressure during operation.

Abstract: Apparatus and method for atomic layer deposition on a surface of a substrate (6) in a treatment space. A gas supply device (15, 16) is present for providing various gas mixtures to the treatment space. The gas supply device (15, 16) is arranged to provide a gas mixture with a precursor material to the treatment space for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules attached via the reactive sites to the surface of the substrate. Subsequently, a gas mixture comprising a reactive agent capable to convert the attached precursor molecules to active precursor sites is provided. A plasma generator (10) is present for generating an atmospheric pressure plasma in the gas mixture comprising the reactive agent.

Abstract: A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one SiOx layer is realized on said part of the substrate surface by: —placing the substrate (1) in a process chamber (5); —maintaining the pressure in the process chamber (5) at a relatively low value; —maintaining the substrate (1) at a specific substrate treatment temperature; —generating a plasma (P) by means of at least one plasma source (3) mounted on the process chamber (5) at a specific distance (L) from the substrate surface; —contacting at least a part of the plasma (P) generated by each source (3) with the said part of the substrate surface; and —supplying at least one precursor suitable for SiOx realization to the said part of the plasma (P); wherein at least the at least one layer realized on the substrate (1) in subjected to a temperature treatment in a gas environment.

Abstract: A method for the passivation of a semiconductor substrate, wherein a SiNx:H layer is deposited on the surface of the substrate (1) by means of a PECVD process comprising the following steps: the substrate (1) is placed in a processing chamber (5) which has specific internal processing chamber dimensions; the pressure in the processing chamber is maintained at a relatively low value; the substrate (1) is maintained at a specific treatment temperature; a plasma (P) is generated by at least one plasma cascade source (3) mounted on the processing chamber (5) at a specific distance (L) from the substrate surface; at least a part of the plasma (P) generated by each source (3) is brought into contact with the substrate surface; and flows of silane and ammonia are supplied to said part of the plasma (P).

Abstract: A method for the passivation of a semiconductor substrate, wherein a SiNx:H layer is deposited on the surface of the substrate (1) by means of a PECVD process comprising the following steps: