Abstract: A lithographic apparatus comprising a support structure configured to be moved by a first scan distance during a single scanning operation when supporting a patterning device having a first extent in the scanning direction and to be moved by a second scan distance during a single scanning operation when supporting a patterning device having a second extent in the scanning N direction, and a substrate table configured to be moved by a third scan distance during a single scanning operation when the support structure supports a patterning device having the first extent in the scanning direction and to be moved by a fourth scan distance during a single scanning operation when the support structure supports a patterning device having the second extent in the scanning direction.

Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Abstract: A measurement method including using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: A lithographic apparatus comprising a support structure configured to be moved by a first scan distance during a single scanning operation when supporting a patterning device having a first extent in the scanning direction and to be moved by a second scan distance during a single scanning operation when supporting a patterning device having a second extent in the scanning N direction, and a substrate table configured to be moved by a third scan distance during a single scanning operation when the support structure supports a patterning device having the first extent in the scanning direction and to be moved by a fourth scan distance during a single scanning operation when the support structure supports a patterning device having the second extent in the scanning direction.

Abstract: A measurement method including using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Abstract: A lithographic apparatus includes an illumination system, support constructed to support patterning device, a projection system, an interferometric sensor and a detector. The interferometric sensor is designed to measure one or more wavefronts of a radiation beam projected by the projection system from an adjustable polarizer. The interferometric sensor includes a diffractive element disposed at a level of a substrate in the lithographic apparatus and a detector spaced apart from the diffractive element, the diffractive element being arranged to provide shearing interferometry between at least two wavefronts mutually displaced in a direction of shear. The detector is designed to determine, from the wavefront measurements, information on polarization affecting properties of the projection system.

Abstract: A projection system (PS) is provided which includes, in an embodiment, two frames. The optical elements of the projection system are mounted on a first frame (200). The position of the optical elements is measured relative to a second frame (300) using a first measurement system (910). A second measurement system (920) is used to measure a parameter associated with a deformation of the second frame. The measurement made by the second measurement system can be used to compensate for any errors in the position of the optical elements as measured by the first measurement system resulting from deformations of the second frame. Typically, deformations of the frames are due to resonant oscillation and thermal expansion. Having two frames enables the optical elements of the projection system to be positioned with a high degree of accuracy.

Abstract: A radiation system is configured to generate a radiation beam. The radiation system comprising a chamber that includes a radiation source configured to generate radiation, a radiation beam emission aperture, and a radiation collector configured to collect radiation generated by the source, and to transmit the collected radiation to the radiation beam emission aperture. The radiation collector includes a spectral purity filter configured to enhance a spectral purity of the radiation to be emitted via the aperture.

Abstract: A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

Abstract: A lithographic apparatus includes an illuminator configured to provide a projection beam of radiation and a polarization controller configured to control an intensity of a preferred state of polarization of the projection beam. The lithographic apparatus further includes a support configured to hold a patterning device. The patterning device configured to pattern the projection beam according to a desired pattern. The apparatus also includes a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam onto a target portion of the substrate to form a patterned image on the substrate.

Abstract: A radiation beam modification apparatus for controlling a property of a beam of radiation in a lithographic apparatus includes a flexible sheet provided with a plurality of apertures, and a positioning apparatus comprising a first rotatable member and a second rotatable member, wherein a first end portion of the flexible sheet is coupled to the first rotatable member, a second end portion of the flexible sheet is coupled to the second rotatable member and a central portion of the flexible sheet extends between the first rotatable member and the second rotatable member. The apertures may be used to control the numerical aperture of a projection system of a lithographic apparatus.

Abstract: An illumination system includes a field-facet mirror-device and a pupil mirror configured to condition a beam of radiation incident on the field-facet mirror-device. The field-facet mirror-device includes reflective field facets movable between first and second orientations relative to the incident beam. The field facets in their first orientations are effective to reflect the incident radiation towards respective reflective pupil facets so as to form part of a conditioned beam reflected from the pupil-facet mirror-device. The field facets in their second orientations are effective to reflect the incident radiation onto respective areas of the pupil-facet mirror-device designated as beam dump areas. The areas are arranged to prevent radiation incident on the areas from forming part of the conditioned beam and are arranged between the limits of an annular area on the pupil-facet mirror-device effective to define the inner and outer regions of the conditioned beam reflected from the pupil-facet mirror-device.

Abstract: A radiation system is configured to generate a radiation beam. The radiation system comprising a chamber that includes a radiation source configured to generate radiation, a radiation beam emission aperture, and a radiation collector configured to collect radiation generated by the source, and to transmit the collected radiation to the radiation beam emission aperture. The radiation collector includes a spectral purity filter configured to enhance a spectral purity of the radiation to be emitted via the aperture.

Abstract: A projection system (PS) is provided which includes, in an embodiment, two frames. The optical elements of the projection system are mounted on a first frame (200). The position of the optical elements is measured relative to a second frame (300) using a first measurement system (910). A second measurement system (920) is used to measure a parameter associated with a deformation of the second frame. The measurement made by the second measurement system can be used to compensate for any errors in the position of the optical elements as measured by the first measurement system resulting from deformations of the second frame. Typically, deformations of the frames are due to resonant oscillation and thermal expansion. Having two frames enables the optical elements of the projection system to be positioned with a high degree of accuracy.

Abstract: A lithographic apparatus uses polarized light to improve the imaging properties such as exposure latitude, while maintaining and extending the lifetime of an illumination system in a lithographic apparatus.

Abstract: A multiple-die mask pattern is arranged with dies having the same pattern in mutually opposite orientations. The method for arranging the dies includes analyzing the pattern of a single die to identify a pattern characteristic property which is non uniformly distributed over the area of the die. If the distribution is found to be asymmetric, a line separating the die area into two half-die areas is defined with respect to which the asymmetry is apparent. Half-die areas of different dies with the same pattern characteristic property are grouped together in the mask pattern. The resulting enhanced symmetry of the distribution of the pattern characteristic property over the mask area increases lithographic processability and thereby improves die yield.

Abstract: A radiation beam modification apparatus for controlling a property of a beam of radiation in a lithographic apparatus includes a flexible sheet provided with a plurality of apertures, and a positioning apparatus comprising a first rotatable member and a second rotatable member, wherein a first end portion of the flexible sheet is coupled to the first rotatable member, a second end portion of the flexible sheet is coupled to the second rotatable member and a central portion of the flexible sheet extends between the first rotatable member and the second rotatable member. The apertures may be used to control the numerical aperture of a projection system of a lithographic apparatus.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a polarization sensor configured at least in part to couple to a reticle stage, wherein components of the reticle polarization sensor can be loaded and unloaded in the lithographic apparatus in the manner used for conventional reticles. In one configuration an active reticle tool includes a rotatable retarder configured to vary the retardation applied to polarized light received from a field point in the illumination system. In another configuration, a passive reticle tool is configured as an array of polarization sensor modules, where the amount of retardation applied to received light by fixed retarders varies according to position of the polarization sensor module. Accordingly, a plurality of retardation conditions for light received at a given field point can be measured, wherein a complete determination of a polarization state of the light at the given field point can be determined.