Patents by Inventor Will Schlosser

Will Schlosser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTEGRATED SHOWERHEAD WITH THERMAL CONTROL FOR DELIVERING RADICAL AND PRECURSOR GAS TO A DOWNSTREAM CHAMBER TO ENABLE REMOTE PLASMA FILM DEPOSITION
    Publication number: 20230175134
    Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
    Type: Application
    Filed: February 2, 2023
    Publication date: June 8, 2023
    Inventors: Rachel E. BATZER, Huatan QIU, Bhadri N. VARADARAJAN, Patrick Girard BREILING, Bo GONG, Will SCHLOSSER, Zhe GUI, Taide TAN, Geoffrey HOHN
  • Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
    Patent number: 11608559
    Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
    Type: Grant
    Filed: August 12, 2021
    Date of Patent: March 21, 2023
    Assignee: Lam Research Corporation
    Inventors: Rachel Batzer, Huatan Qiu, Bhadri Varadarajan, Patrick Girard Breiling, Bo Gong, Will Schlosser, Zhe Gui, Taide Tan, Geoffrey Hohn
  • INTEGRATED SHOWERHEAD WITH THERMAL CONTROL FOR DELIVERING RADICAL AND PRECURSOR GAS TO A DOWNSTREAM CHAMBER TO ENABLE REMOTE PLASMA FILM DEPOSITION
    Publication number: 20210371982
    Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
    Type: Application
    Filed: August 12, 2021
    Publication date: December 2, 2021
    Inventors: Rachel BATZER, Huatan Qiu, Bhadri Varadarajan, Patrick Girard Breiling, Bo Gong, Will Schlosser, Zhe Gui, Taide Tan, Geoffrey Hohn
  • Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
    Patent number: 11101164
    Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: August 24, 2021
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Rachel Batzer, Huatan Qiu, Bhadri Varadarajan, Patrick Girard Breiling, Bo Gong, Will Schlosser, Zhe Gui, Taide Tan, Geoffrey Hohn
  • Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
    Patent number: 10604841
    Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: March 31, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Rachel Batzer, Huatan Qiu, Bhadri Varadarajan, Patrick Girard Breiling, Bo Gong, Will Schlosser, Zhe Gui, Taide Tan, Geoffrey Hohn
  • INTEGRATED SHOWERHEAD WITH THERMAL CONTROL FOR DELIVERING RADICAL AND PRECURSOR GAS TO A DOWNSTREAM CHAMBER TO ENABLE REMOTE PLASMA FILM DEPOSITION
    Publication number: 20180163305
    Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
    Type: Application
    Filed: December 14, 2016
    Publication date: June 14, 2018
    Inventors: Rachel Batzer, Huatan Qiu, Bhadri Varadarajan, Patrick Girard Breiling, Bo Gong, Will Schlosser, Zhe Gui, Taide Tan, Geoffrey Hohn