Abstract: A description is given of a method of metallizing an electrically insulating plate, for example, of glass having a large number of holes. Said holes are internally provided with a metal layer and the plate is provided with metal tracks. The metal used is mainly aluminum. The aluminum is coated with a thin protective layer of chromium, cobalt, nickel, zirconium or titanium. Said protective layer makes it possible to use a photosensitve, cataphoretic lacquer for providing the metal layer with a structure. The method can very suitably be used for the manufacture of selection plates for thin electron displays.

Abstract: A method of metallizing an electrically insulating plate, for example, of glass having a large number of holes. Said relatively small holes are internally provided with a metal layer and the plate is provided with metal tracks. The metal used is mainly aluminum. The aluminum is coated with a thin protective layer of chromium, cobalt, nickel, zirconium or titanium. Said protective layer makes it possible to use a photosensitive, cataphoretic lacquer to mask the metal layer in patterning and etching thereof. The method can very suitably be used for the manufacture of selection plates for thin electron displays.

Abstract: Method of photolithographically metallizing at least the inside of holes arranged in accordance with a pattern in a plate of an electrically insulating material.A method of metallizing an electrically insulating plate, for example, of glass, having a large number of holes. Said holes are internally provided with a metal layer and the plate is provided with metal tracks. The metal used is mainly aluminium. The aluminium is coated with a thin protective layer of chromium, cobalt, nickel, zirconium or titanium. Said protective layer makes it possible to use a photosensitive, electrophoretic lacquer for providing the metal layer with a structure. The method can very suitably be used for the manufacture of selection plates for thin electron displays.

Abstract: A low-power cathode can be obtained by arranging it on a substrate (1), preferably of silicon, which is entirely or partly removed at the location of the emissive structure (11) by means of, for example, anisotropic etching. Because of its low power, the cathode is particularly suitable for multi-beam applications.

Abstract: A low-power cathode can be obtained by arranging it on a substrate (1), preferably of silicon, which is entirely or partly removed at the location of the emissive structure (11) by means of, for example, anisotropic etching. Because of its low power, the cathode is particularly suitable for multi-beam applications.