Abstract: Provided herein are systems and methods for development and use of a perfusion apparatus comprising a biological phantom created from an ex vivo placenta. In some embodiments, a system is provided for perfusing an ex vivo placenta to be imaged using a magnetic resonance imaging (MRI) device, the system comprising a chamber configured to house the ex vivo placenta therein, the chamber including a first partition separating the chamber into a first portion and a second portion, wherein the ex vivo placenta is housed at least partially in the first portion, and at least one first inlet disposed in the second portion for receiving at least one first tube, the at least one first tube being configured to couple at least one first pump to a fetal compartment of the ex vivo placenta when present in the chamber.

Abstract: The present embodiments disclose a handguard for a roller-delayed firearm. The handguard includes a rail extending between a first end and a second end defining a length of a handguard and a tubular portion extending at least partially along the length of the roller delayed firearm. The tubular portion is configured to releasably engage with a male mating portion of a roller-delayed firearm. A clamp selectively secures the female mating portion of the tubular portion to the male mating portion of the receiver.

Abstract: The present application discloses systems and methods for managing assets. In one exemplary embodiment, a system for monitoring an asset is disclosed. The system comprises at least one asset monitoring device, at least one fuel control device, and a central server. The asset monitoring device is configured for use with the asset to collect asset data about the asset. The fuel control device is configured for use with a fuel source to collect fueling data about fueling of the asset. The fuel control device is configured to communicate with the asset monitoring device to receive the asset data from the asset monitoring device. The central server is configured to communicate with the fuel control device to receive the asset data and the fueling data from the fuel control device.

Abstract: The present application discloses systems and methods for managing assets. In one exemplary embodiment, a system for monitoring an asset is disclosed. The system comprises at least one asset monitoring device, at least one fuel control device, and a central server. The asset monitoring device is configured for use with the asset to collect asset data about the asset. The fuel control device is configured for use with a fuel source to collect fueling data about fueling of the asset. The fuel control device is configured to communicate with the asset monitoring device to receive the asset data from the asset monitoring device. The central server is configured to communicate with the fuel control device to receive the asset data and the fueling data from the fuel control device.

Abstract: The present application discloses systems and methods for managing assets. In one exemplary embodiment, a system for monitoring an asset is disclosed. The system comprises at least one asset monitoring device, at least one fuel control device, and a central server. The asset monitoring device is configured for use with the asset to collect asset data about the asset. The fuel control device is configured for use with a fuel source to collect fueling data about fueling of the asset. The fuel control device is configured to communicate with the asset monitoring device to receive the asset data from the asset monitoring device. The central server is configured to communicate with the fuel control device to receive the asset data and the fueling data from the fuel control device.

Abstract: Nanotube memory cells are formed on a semiconductor substrate. Lower and upper memory cell chambers are formed by forming a first trench overlying the first and second contacts in a nitride layer, forming a second trench overlying the first and second contacts in a dielectric layer, depositing a nitride layer on the combined lower and upper chambers, and patterning the nitride layer to form an access hole to the nanotube layer and a second access hole to the second contact. A conductive layer is then deposited and patterned to form a top electrode contact and a nanotube layer contact. The conductive material closes the aperture created by the access hole.

Abstract: A metal layer formed on a semiconductor wafer is planarized by applying sequentially a deplating step, a plating step, and a relaxation step in a removal cycle. A series of cycles are performed sequentially in one embodiment to comprise a pass. The removal cycle is repeated in sequence until the pass is completed. The respective deplating and plating rates are adjusted so that the ratios of deplating rates to plating rates progressively decrease from an initial pass to a final pass. Organic additives are added to the electrolytic plating solution to control the plating portion of the cycle in a topography dependant fashion.

Abstract: A dual damascene interconnect structure is formed by patterning a first dielectric to form a metal line. A second dielectric is disposed on the first dielectric and patterned to form a via. The first metal line is patterned in a configuration relative to a via landing so that a cavity is formed when the via etch into the second dielectric is extended into the first dielectric. The cavity is filled with a conductive metal in an integral manner with the formation of the via to form a via projection for improved electrical contact between the via and the metal line.

Abstract: A process for forming copper metal interconnects and copper-filled vias in a dielectric layer on an integrated circuit structure wherein the impurity level of the copper-filled metal lines and copper-filled vias is lowered, resulting in an increase in the average grain size of the copper, a reduction of the resistivity, and more homogeneous distribution of the stresses related to the formation of the copper metal lines and copper-filled vias throughout the deposited copper. The process comprises: depositing a partial layer of copper metal in trenches and via openings previously formed in one or more dielectric layers, then annealing the deposited copper layer at an elevated temperature for a predetermined period of time; and then repeating both the deposit step and the step of annealing the deposited layer of copper one or more additional times until the desired final thickness is reached.

Abstract: An integrated circuit device which includes a surface alloy layer, where the alloy layer forms a protective and adherent thin layer which improves electromigration performance. A method includes steps of forming one or more trench and/or via structures, depositing a thin TaN/Ta barrier layer stack and then a Copper seed layer, depositing and filling the via/trench with a thick Copper layer, removing the metal layers over in the field area, depositing, for example, a layer of Aluminum over the structure, annealing the devices in a protective atmosphere to allow Aluminum to react with Copper to form a thin Copper-Aluminum alloy, and removing the Aluminum metal layers over the field area, forming a thin layer of Al2O3, AlN or Al3C4 over the Copper-Aluminum for protection. During subsequent deposition of barrier and seed, the top surface layer of the Al2O3, AlN or Al3C4 is preferably removed to ensure the integrity of metal contact.

Abstract: A device for applying a mat of aggregate material having an entrained liquid additive as the device is moved along a path. The device includes a hopper for receiving the aggregate material, a spreader for spreading the aggregate material generally transversely relative to the path, a compacting screed for compacting the aggregate material into the mat, and a mixing conveyor arranged to convey the aggregate material from the hopper to the spreader and to mix the aggregate material along the length of the conveyor. A conduit in flow communication with an additive supply source is mounted within and spans a portion of the hopper. The conduit thus communicates the liquid additive from the additive source to the aggregate material as the aggregate material is being mixed and conveyed.