Abstract: This invention relates to a method for fabricating a color solid-state image sensor which comprises, the steps of: forming an inorganic passivation layer over an array of photosensing elements and their associate bonding patterns; providing a color filter array over the passivation layer; forming a photoresist layer over the color filter array and other exposed areas; forming a pattern in the photoresist such that portions over the bonding pad areas are opened; and removing selective regions of the passivation layer to expose the bonding pads.

Abstract: A lift-off process for forming patterned films of particular use for films of metals that need to be deposited in a non-directional fashion. The process features a lift-off mask that includes a thin coating of Brewer Science ARC.RTM. PN-2 as an assisting layer under a photoresist layer.

Abstract: A method for producing high resolution patterned resist images having excellent etch resistance and superior thermal and dimensional stability comprises the steps of:(a) forming a planarizing layer resistant to silicon uptake on a substrate;(b) providing a positive-working photoresist composition containing --OH or --NH-- groups over the planarizing layer,(c) imagewise exposing the resist to activating radiation,(d) developing the exposed resist,(e) contacting the developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, the silicon-containing compound having the structural formula: ##STR1## wherein: X.sup.1 and X.sup.2 are individually chloro or ##STR2## wherein R.sup.3 and R.sup.4 are individually H or alkyl; andR.sup.1 and R.sup.2 are individually H or alkyl; and(f) contacting the planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.

Abstract: A photographic method for making a color filter element, and the resulting color filter element is disclosed.

Abstract: A device is disclosed comprising a non-planar semiconductor substrate and a planarizing layer thereon, the planarizing layer having a maximum thickness that is no greater than about 3.mu. and a planarization factor P.gtoreq.1.0. In a preferred embodiment, the layer comprises a polymer formed from a liquid monomer coated onto the substrate and thereafter polymerized.