Patents by Inventor William Charles Niehaus

William Charles Niehaus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system
    Patent number: 4106959
    Abstract: The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.
    Type: Grant
    Filed: July 6, 1976
    Date of Patent: August 15, 1978
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: James Vincent DiLorenzo, William Charles Niehaus, Lawrence John Varnerin, Jr.
  • High efficiency gallium arsenide impatt diodes
    Patent number: 3986192
    Abstract: The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.
    Type: Grant
    Filed: January 2, 1975
    Date of Patent: October 12, 1976
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: James Vincent DiLorenzo, William Charles Niehaus, Lawrence John Varnerin, Jr.