Abstract: A system comprises a syringe pump and a special designed syringe. The syringe pump includes a housing with a flange holder for receiving a flange of the syringe barrel, an electrical motor disposed inside the housing, a plurality of gears driven by the electrical motor, a leadscrew connected to the plurality of gears, and a cage housing for housing the leadscrew and for holding at least partially the plunger. The flange of the plunger inserts into the flange holder, the leadscrew engages the plunger and moves the plunger in and out of the syringe.

Abstract: An ion implantation system provides ions to a workpiece positioned in a process environment of a process chamber on a sub-ambient temperature chuck. An intermediate chamber having an intermediate environment is in fluid communication with an external environment and has a cooling station and heating station for cooling and heating the workpiece. A load lock chamber is provided between the process chamber and intermediate chamber to isolate the process environment from the intermediate environment. A positive pressure source provides a dry gas within the intermediate chamber at dew point that is less than a dew point of the external environment to the intermediate chamber. The positive pressure source isolates the intermediate environment from the external environment via a flow of the dry gas from the intermediate chamber to the external environment.

Abstract: Aspects of the present invention relate to ion implantation systems that make use of a vapor compression cooling system. In one embodiment, a thermal controller in the vapor compression system sends refrigeration fluid though a compressor and a condenser according to an ideal vapor compression cycle to help limit or prevent undesired heating of a workpiece during implantation, or to actively cool the workpiece.

Abstract: A Johnsen-Rahbek (J-R) electrostatic clamp is provided for clamping a workpiece, wherein the J-R clamp has a dielectric layer having a clamping surface associated with the workpiece and a backside surface generally opposing the clamping surface. The dielectric layer has a plurality of regions, wherein each of the plurality of regions comprises one of a plurality of dielectric materials. Each of the plurality of dielectric materials has a baseline resistivity that is different from the remainder of the plurality of dielectric materials, and each of the plurality of regions of the dielectric layer has a baseline resistivity that is different from the remainder of the plurality of regions of the dielectric layer. A plurality of electrically conductive electrodes are associated with the backside surface of the dielectric layer, wherein each of the plurality of electrically conductive electrodes are associated with one or more of the plurality of regions of the dielectric layer.

Abstract: An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station.

Abstract: An apparatus and method are provided for selecting materials for forming an electrostatic clamp. The electrostatic clamp has a backing plate having a first coefficient of thermal expansion, wherein the backing plate provides structural support and rigidity to the electrostatic clamp. The electrostatic clamp further has a clamping plate having a clamping surface associated with contact with a workpiece, wherein the clamping plate has a second coefficient of thermal expansion associated therewith. The clamping plate is bonded, attached or grown to the backing plate, wherein minimal deflection of the clamping plate is evident across a predetermined temperature range. The first coefficient of thermal expansion and second coefficient of thermal expansion, for example, are substantially similar, and vary by no greater than a factor of three.

Abstract: A Johnsen-Rahbek (J-R) electrostatic clamp is provided for clamping a workpiece, wherein the J-R clamp has a dielectric layer having a clamping surface associated with the workpiece and a backside surface generally opposing the clamping surface. The dielectric layer has a plurality of regions, wherein each of the plurality of regions comprises one of a plurality of dielectric materials. Each of the plurality of dielectric materials has a baseline resistivity that is different from the remainder of the plurality of dielectric materials, and each of the plurality of regions of the dielectric layer has a baseline resistivity that is different from the remainder of the plurality of regions of the dielectric layer. A plurality of electrically conductive electrodes are associated with the backside surface of the dielectric layer, wherein each of the plurality of electrically conductive electrodes are associated with one or more of the plurality of regions of the dielectric layer.

Abstract: An electrostatic chuck and method for clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. A punch is operably coupled to the clamping plate and an electrical ground, wherein the punch comprises a trigger mechanism and a punch tip. The punch tip translates between extended and retracted positions, wherein a point of the punch tip is proud of the clamping surface when the punch tip is in the extended position. The punch tip is configured to translate toward the clamping surface upon clamping the workpiece to the clamping plate. Upon reaching the retracted position, the trigger mechanism imparts an impact force to the punch tip, forcing the punch tip into the workpiece and providing an electrical ground connection to the workpiece.

Abstract: A workpiece scanning system is provided having a scan arm that rotates about a first axis and a chilled end effector rotatably coupled to the scan arm about a second axis for selectively securing a workpiece. The chilled end effector has a clamping plate and one or more cooling mechanisms for cooling the clamping plate. A bearing is positioned along the second axis and rotatably couples the end effector to the scan arm, and a seal is positioned along the second axis to provide a pressure barrier between an external environment and an internal environment. One or more of the bearing and seal can have a ferrofluid associated therewith. A heater assembly is positioned proximate to the bearing and seal, wherein the heater assembly selectively provides a predetermined amount of heat to the bearing and seal, therein increasing a propensity of the end effector to rotate about the second axis.

Abstract: An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station.

Abstract: An ion implantation system provides ions to a workpiece positioned in a process environment of a process chamber on a sub-ambient temperature chuck. An intermediate chamber having an intermediate environment is in fluid communication with an external environment and has a cooling station and heating station for cooling and heating the workpiece. A load lock chamber is provided between the process chamber and intermediate chamber to isolate the process environment from the intermediate environment. A positive pressure source provides a dry gas within the intermediate chamber at dew point that is less than a dew point of the external environment to the intermediate chamber. The positive pressure source isolates the intermediate environment from the external environment via a flow of the dry gas from the intermediate chamber to the external environment.

Abstract: An ion source is disclosed that utilizes a capacitive discharge to produce ignition ions, which are subsequently used to ignite an inductively coupled plasma within a plasma chamber. In some embodiments, a capacitive discharge element is located along a gas feed line at a position that is upstream of a plasma chamber. The capacitive discharge element ignites a capacitive discharge within the gas feed line. The capacitive discharge contains ignition ions that are provided to a downstream plasma chamber. An inductively coupled plasma ignition element, in communication with the plasma chamber, ignites and sustains a high density inductively coupled plasma within the plasma chamber based upon ignition ions from the capacitive discharge. Due to the ignition ions, the inductively coupled plasma element can easily ignite the high density inductively coupled plasma, even at a low pressure.

Abstract: Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece.

Abstract: A cold trap filter and method is provided for filtering chemical species from a vacuum system of an ion implantation system. A canister is in fluid communication with an exhaust of a high vacuum pump and an intake of a roughing pump used for evacuating an ion source chamber. One or more paddles are positioned within the canister, wherein each paddle has a cooling line in fluid communication with a coolant source. The coolant source passes a coolant through the cooling line, thus cooling the one or more paddles to a predetermined temperature associated with a condensation or deposition point of the chemical species, therein condensing or depositing the chemical species on the paddles while not interfering with a vacuum capacity of the high vacuum and roughing pumps. The paddles can also be electrically biased to electrostatically attract the chemical species to the paddles in one or more biasing steps.

Abstract: An electrostatic clamp (ESC), system, and method for clamping a workpiece is provided. A clamping plate of the ESC has central disk and an annulus encircling the central disk, wherein the central disk is recessed from the annulus by a gap distance, therein defining a volume. Backside gas delivery apertures are positioned proximate to an interface between the annulus and the central disk. A first voltage to a first electrode of the annulus clamps a peripheral region of the workpiece to a first layer. A second voltage to a second electrode of the central disk generally compensates for a pressure of a backside gas within the volume. The ESC can be formed of J-R- or Coulombic-type materials. A cooling plate associated with the clamping plate further provides cooling by one or more cooling channels configured to route a cooling fluid therethrough.

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece. The ion implanter also includes an array of absorption and radiation elements arranged to absorb energy of the scanned ion beam and radiate at least some of the absorbed energy away from the propagation direction. A detection element (e.g., an infrared detector) is arranged to detect energy (e.g., in the form of heat) radiated by the array of absorption and radiation elements and to determine a beam profile of the scanned ion beam based on the detected energy.

Abstract: A cold trap filter and method is provided for filtering chemical species from a vacuum system of an ion implantation system. A canister is in fluid communication with an exhaust of a high vacuum pump and an intake of a roughing pump used for evacuating an ion source chamber. One or more paddles are positioned within the canister, wherein each paddle has a cooling line in fluid communication with a coolant source. The coolant source passes a coolant through the cooling line, thus cooling the one or more paddles to a predetermined temperature associated with a condensation or deposition point of the chemical species, therein condensing or depositing the chemical species on the paddles while not interfering with a vacuum capacity of the high vacuum and roughing pumps. The paddles can also be electrically biased to electrostatically attract the chemical species to the paddles in one or more biasing steps.

Abstract: One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.

Abstract: The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.

Abstract: Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece.