Abstract: An architecture for a serial multi-chip package digital controller including a controller oriented processor die and a separate non-volatile memory die. The architecture provides for a low pin count on the package, minimal electrical connections on and between the dice, and a minimal number of registers by making use of significant multiplexing to allow many of the registers and signal lines to serve multiple functions responsive to the mode of operation and other control signals.The processor includes an in-system programming mode including first and second memory interface control registers on the processor die and the memory die, respectively, for receiving control bits from the processor core for controlling multiplexers on the dies. The various bit output lines of the first memory interface control register are coupled to the control inputs of the multiplexers.

Abstract: An architecture for a serial multi-chip package digital controller including a controller oriented processor die and a separate non-volatile memory die. The architecture provides for a low pin count on the package, minimal electrical connections on and between the dice, and a minimal number of registers by making use of significant multiplexing to allow many of the registers and signal lines to serve multiple functions responsive to the mode of operation and other control signals.The processor can be programmed internally or externally. In the in-system programming mode, the processor program counter is used to fetch running instructions out of an on-board ROM instruction memory on the processor die. The processor core outputs an address into which data is to be programmed on its output data bus. The processor core then receives from an external device the data which is to be programmed into the selected address and outputs it serially onto the data bus and therefrom to the memory die.

Abstract: A combination anode and cathode for an electrorefiner which includes a hollow cathode and an anode positioned inside the hollow cathode such that a portion of the anode is near the cathode. A retaining member is positioned at the bottom of the cathode. Mechanism is included for providing relative movement between the anode and the cathode during deposition of metal on the inside surface of the cathode during operation of the electrorefiner to refine spent nuclear fuel. A method is also disclosed which includes electrical power means selectively connectable to the anode and the hollow cathode for providing electrical power to the cell components, electrically transferring uranium values and plutonium values from the anode to the electrolyte, and electrolytically depositing substantially pure uranium on the hollow cathode. Uranium and plutonium are deposited at a liquid cathode together after the PuCl.sub.3 to UCl.sub.3 ratio is greater than 2:1.

Abstract: The present invention relates to a molding apparatus having a first mold half with a core portion and a second mold half with a cavity portion wherein the core portion moves relative to the cavity portion between mold open and mold closed positions. The molding apparatus further includes a carrier plate for receiving molded articles and holding inserts to be incorporated into the molded article. The present invention also relates to transferring the inserts to the mold cores prior to molding.

Abstract: An apparatus capable of functioning as a solid cathode and for removing crystalline structure from the upper surface of a liquid cathode, includes a metallic support vertically disposed with respect to an electrically insulating container capable of holding a liquid metal cathode. A piston of electrically insulating material mounted on the drive tube, surrounding the current lead, for vertical and rotational movement with respect thereto including a downwardly extending collar portion surrounding the metallic current lead. At least one portion of the piston remote from the metallic current lead being removed. Mechanism for lowering the piston to the surface of the liquid cathode and raising the piston from the surface along with mechanism for rotating the piston around its longitudinal axis.

Abstract: ROM cell programmed ON has N+ source implant spaced a given distance from the gate with LDD bridging the gap between the N+ source and the N channel. ROM cell programmed OFF has P+ implanted into this gap so as to completely override the LDD in this gap. The P+ prevents the N channel from forming ohmic connection to the N+ source.

Abstract: A process for converting PuO.sub.2 and UO.sub.2 present in an electrorefiner to the chlorides, by contacting the PuO.sub.2 and UO.sub.2 with Li metal in the presence of an alkali metal chloride salt substantially free of rare earth and actinide chlorides for a time and at a temperature sufficient to convert the UO.sub.2 and PuO.sub.2 to metals while converting Li metal to Li.sub.2 O. Li.sub.2 O is removed either by reducing with rare earth metals or by providing an oxygen electrode for transporting O.sub.2 out of the electrorefiner and a cathode, and thereafter applying an emf to the electrorefiner electrodes sufficient to cause the Li.sub.2 O to disassociate to O.sub.2 and Li metal but insufficient to decompose the alkali metal chloride salt. The U and Pu and excess lithium are then converted to chlorides by reaction with CdCl.sub.2.

Abstract: A new electrolytic process and apparatus are provided using sodium, cerium or a similar metal in alloy or within a sodium beta or beta"-alumina sodium ion conductor to electrolytically displace each of the spent fuel metals except for cesium and strontium on a selective basis from the electrolyte to an inert metal cathode. Each of the metals can be deposited separately. An electrolytic transfer of spent fuel into the electrolyte includes a sodium or cerium salt in the electrolyte with sodium or cerium alloy being deposited on the cathode during the transfer of the metals from the spent fuel. The cathode with the deposit of sodium or cerium alloy is then chanted to an anode and the reverse transfer is carried out on a selective basis with each metal being deposited separately at the cathode. The result is that the sodium or cerium needed for the process is regenerated in the first step and no additional source of these reactants is required.

Abstract: An electrostatic discharge ("ESD") protection circuit for use in CMOS I.C. devices provides a low voltage path to and from each input and output ("I/O") pad and power pad by using the wide, low resistance metal VCC and Vss rings and parasitic bipolar transistors configured as three terminal devices at each I/O and power pad. The present invention also provides a clamp, between the VCC and VSS rings, capable of being rapidly switched into the conducting state during an ESD event so as to shunt excess bias current that could otherwise damage reverse biased junctions during an ESD event.

Abstract: An electrochemical process and electrochemical cell for reducing a metal oxide are provided. First the oxide is separated as oxygen gas using, for example, a ZrO.sub.2 oxygen ion conductor anode and the metal ions from the reduction salt are reduced and deposited on an ion conductor cathode, for example, sodium ion reduced on a .beta.-alumina sodium ion conductor cathode. The generation of and separation of oxygen gas avoids the problem with chemical back reaction of oxygen with active metals in the cell. The method also is characterized by a sequence of two steps where an inert cathode electrode is inserted into the electrochemical cell in the second step and the metallic component in the ion conductor is then used as the anode to cause electrochemical reduction of the metal ions formed in the first step from the metal oxide where oxygen gas formed at the anode. The use of ion conductors serves to isolate the active components from chemically reacting with certain chemicals in the cell.

Abstract: A switching element is connected to an integrated circuit for shunting an ESD pulse away from the integrated circuit features. A plurality of detection circuits responsive to typical ESD waveform characteristics provide logical control of the switching means. In the preferred embodiment, a NAND gate drives the switching element. The first input to the NAND gate is a first RC network having a first time constant that exceeds the characteristic rise time of the typical ESD pulse, but not the characteristic duration of the typical ESD pulse. The second input to the NAND gate is a feedback loop from the NAND gate output. The feedback loop includes a second RC network having a second time constant that exceeds the duration of a noise pulse, a third RC network having a third time constant that approximates the characteristic duration of the typical ESD pulse, and an inverter between the second and third RC networks.

Abstract: ROM cell programmed ON has N+ source implant spaced a given distance from the gate with LDD bridging the gap between the N+ source and the N channel. ROM cell programmed OFF has P+ implanted into this gap so as to completely override the LDD in this gap. The P+ prevents the N channel from forming ohmic connection to the N+ source.

Abstract: A process of separating transuranium actinide values from uranium values present in spent nuclear oxide fuels which contain rare earth and noble metal fission products. The oxide fuel is reduced with Ca metal in the presence of CaCl.sub.2 and a Cu--Mg alloy containing not less than about 25% by weight Mg at a temperature in the range of from about 750.degree. C. to about 850.degree. C. to precipitate uranium metal and some of the noble metal fission products leaving the Cu--Mg alloy having transuranium actinide metals and rare earth fission product metals and some of the noble metal fission products dissolved therein. The CaCl.sub.2 having CaO and fission products of alkali metals and the alkali earth metals and iodine dissolved therein is separated and electrolytically treated with a carbon electrode to reduce the CaO to Ca metal while converting the carbon electrode to CO and CO.sub.2. The Ca metal and CaCl.sub.2 is recycled to reduce additional oxide fuel.

Abstract: A process of separating transuranium actinide values from uranium values present in spent nuclear oxide fuels which contain rare earth and noble metal fission products. The oxide fuel is reduced with Ca metal in the presence of CaCl.sub.2 and a U-Fe alloy containing not less than about 84% by weight uranium at a temperature in the range of from about 800.degree. C. to about 850.degree. C. to produce additional uranium metal which dissolves in the U-Fe alloy raising the uranium concentration and having transuranium actinide metals and rare earth fission product metals and the noble metal fission products dissolved therein. The CaCl.sub.2 having CaO and fission products of alkali metals and the alkali earth metals and iodine dissolved therein is separated and electrolytically treated with a carbon electrode to reduce the CaO to Ca metal while converting the carbon electrode to CO and CO.sub.2. The Ca metal and CaCl.sub.2 is recycled to reduce additional oxide fuel.

Abstract: A process of separating transuranium actinide values from uranium values present in spent nuclear oxide fuels containing rare earth and noble metal fission products as well as other fission products is disclosed. The oxide fuel is reduced with Ca metal in the presence of Ca chloride and a U-Fe alloy which is liquid at about 800.degree. C. to dissolve uranium metal and the noble metal fission product metals and transuranium actinide metals and rare earth fission product metals leaving Ca chloride having CaO and fission products of alkali metals and the alkali earth metals and iodine dissolved therein. The Ca chloride and CaO and the fission products contained therein are separated from the U-Fe alloy and the metal values dissolved therein.

Abstract: A sample in a wind tunnel is radiated from a thermal energy source exteriorly of the wind tunnel. A thermal imager system, also located exteriorly of the wind tunnel, reads surface radiations from the sample as a function of time. The produced thermal images are characteristic of the heat transferred from the sample to the flow across the sample. In turn, the measured rates of heat loss of the sample are characteristic of the flow and the sample.

Abstract: A single resistance permits a CMOS driver to have output devices that controllably transition "fast off-slow on" and which are not simultaneously on while the driver switches states. The driver's output and supply currents contain reduced harmonics. The resistance is coupled to the gates of the output stage PMOS-NMOS devices, and forms an RC circuit with the intrinsic capacitance at the gates, extending the turn-on transition of the gate drive voltages. Each output device then turns on relatively slowly, but turns off normally. The output current transition times are essentially determined by the resistance and intrinsic capacitances. The resistance is implemented using polysilicon or diffusion, and preferably has a magnitude ten times the on-channel resistance of the input PMOS and NMOS devices driving the output stage.

Abstract: Method for late programming of MOS integrated circuit devices. A second or third level conductive layer is used as a device selection mask for transporting dopant from a doped gate (formed from a first level conductive layer) into the channel region of selected field effect transistors.

Abstract: A sample in a wind tunnel is radiated from a thermal energy source exteriorly of the wind tunnel. A thermal imager system, also located exteriorly of the wind tunnel, reads surface radiations from the sample as a function of time. The produced thermal images are characteristic of the heat transferred from the sample to the flow across the sample. In turn, the measured rates of heat loss of the sample are characteristic of the flow and the sample.