Abstract: A method for applying an extremely thin layer of an adherent material to a substrate at a controllable rate. The disclosed embodiment provides a method for depositing a thin layer of titanium, typically much less than 100 Angstroms, on a silicon dioxide substrate layer in order to provide the necessary adhesion for a metallic film. A silicon wafer having a layer of silicon dioxide is placed on a titanium precoated carrier in an evacuated chamber. The wafer and carrier are then sputter etched using argon as a sputter etchant while titanium is deposited onto the wafer. The ratio of deposition rate to etching rate is controlled to provide a very low effective deposition rate. Thus, while the surface is being atomically cleaned, the adhesive layer is simultaneously deposited. A film of a noble metal, typically platinum, may then be deposited onto the adhesive layer. In an alternative embodiment, the titanium is sputter deposited from a target while the substrate is simultaneously sputter etched.

Abstract: A connector protected against current pulses resulting from secondary emission from connector pins by a conductive layer surrounding each pin set. The conductive layer is intimately bonded to the connector insulation and is connected to the connector pin set. The connector is formed in a housing block of a liquid crystal thermoplastic that retains the crystal structure at elevated temperatures preventing deformation during high temperature soldering. The connector back and sides are patterned with plated conductors that provide interconnection between selected pins directly on the connector outer surfaces. The back surface of the connector is sealed by a heat setting acrylic that prevents contaminants from the environment at the back of the connector getting into the pin recesses.