Abstract: N+ or P+ diffusions are formed in a lightly doped P type or N type starting wafer. Individual planar and spaced cells or tubs are then formed by etching an array of intersecting trenches between the P+ (or N+) diffusions. The trenches extend through the thin device layer to a predefined depth and are filled with a dielectric and with polysilicon to dielectrically insulate each of the tubs. At least one diffusion of each cell is connected to a diffusion of an adjacent cell to connect each of a predetermined number of the cells. The N+ or (P+) diffusions may be each enclosed by a ring shaped P+ or N+ contact diffusion. An MOS-gated device may be integrated into the same chip and may be a lateral or vertical MOSFET or a lateral or vertical IGBT.

Abstract: N+ or P+ diffusions are formed in a lightly doped P type or N type starting wafer. Individual planar and spaced cells or tubs are then formed by etching an array of intersecting trenches between the P+ (or N+) diffusions. The trenches extend through the thin device layer to a predefined depth and are filled with a dielectric and with polysilicon to dielectrically insulate each of the tubs. At least one diffusion of each cell is connected to a diffusion of an adjacent cell to connect each of a predetermined number of the cells. The N+ or (P+) diffusions may be each enclosed by a ring shaped P+ or N+ contact diffusion. An MOS-gated device may be integrated into the same chip and may be a lateral or vertical MOSFET or a lateral or vertical IGBT.

Abstract: A photovoltaic generator device for producing an output sufficient to turn on a MOS-gated device consists of a plurality of planar photogenerator cells connected in series. Each of the photovoltaic generator cells is contained on its own respective insulated tub. The insulated tubs are formed by wafer bonding a device wafer to a handle wafer with a dielectric isolation layer between them. Prior to joining the two wafers, a reflective layer is deposited on the surface of the device wafer to maximize absorption of incident light by the photogenerator cell. The individual tubs are isolated by trenches which enclose each tub and which extend through the reflective and to the dielectric layers between the device and handle wafers. Each tub is formed of an N.sup.- body having a shallow P.sup.+ diffusion. N.sup.+ contact regions are formed in the N.sup.- body and contact strips connect the devices of each of the tubs in series by connecting the P.sup.+ diffusions of one tub to the N.sup.+ contact of an adjacent tub.

Abstract: A photovoltaic generator device for producing an output sufficient to turn on a MOS-gated device consists of a plurality of planar photogenerators connected in series. Each of the photovoltaic generators is contained on its own respective insulated tub. The insulated tubs are formed by wafer bonding a junction-containing wafer to a handle wafer with a dielectric isolation layer between them. The individual tubs are formed at their sides by isolation trenches which enclose each tub and which extend to the dielectric layer between the junction-containing and handle wafers. Each tub is formed of an N.sup.- body having a shallow P.sup.+ diffusion. N.sup.+ contact regions are formed in the N.sup.- body and contact strips connect the devices of each of the tubs in series by connecting the P.sup.+ diffusions of one tub to the N.sup.+ contact of an adjacent tub.