Abstract: A first implant is performed into a substrate to form a well in which a plurality of transistors will be formed. Each transistor of a first subset of the plurality of transistors to be formed has a width that satisfies a predetermined width constraint and each transistor of a second subset has a width that does not satisfy the constraint. A second implant is performed at locations in the well in which transistors of the first subset will be formed and not at locations in the well in which transistors of the second subset will be formed. The transistors are formed, wherein a channel region of each transistor of the first subset is formed in a portion of the substrate which received the second implant and a channel region of each transistor of the second subset is formed in a portion of the substrate which did not receive the second implant.

Abstract: A first implant is performed into a substrate to form a well in which a plurality of transistors will be formed. Each transistor of a first subset of the plurality of transistors to be formed has a width that satisfies a predetermined width constraint and each transistor of a second subset has a width that does not satisfy the constraint. A second implant is performed at locations in the well in which transistors of the first subset will be formed and not at locations in the well in which transistors of the second subset will be formed. The transistors are formed, wherein a channel region of each transistor of the first subset is formed in a portion of the substrate which received the second implant and a channel region of each transistor of the second subset is formed in a portion of the substrate which did not receive the second implant.

Abstract: A first implant is performed into a substrate to form a well in which a plurality of transistors will be formed. Each transistor of a first subset of the plurality of transistors to be formed has a width that satisfies a predetermined width constraint and each transistor of a second subset has a width that does not satisfy the constraint. A second implant is performed at locations in the well in which transistors of the first subset will be formed and not at locations in the well in which transistors of the second subset will be formed. The transistors are formed, wherein a channel region of each transistor of the first subset is formed in a portion of the substrate which received the second implant and a channel region of each transistor of the second subset is formed in a portion of the substrate which did not receive the second implant.

Abstract: A first implant is performed into a substrate to form a well in which a plurality of transistors will be formed. Each transistor of a first subset of the plurality of transistors to be formed has a width that satisfies a predetermined width constraint and each transistor of a second subset has a width that does not satisfy the constraint. A second implant is performed at locations in the well in which transistors of the first subset will be formed and not at locations in the well in which transistors of the second subset will be formed. The transistors are formed, wherein a channel region of each transistor of the first subset is formed in a portion of the substrate which received the second implant and a channel region of each transistor of the second subset is formed in a portion of the substrate which did not receive the second implant.

Abstract: A delay matching circuit has a first node (48), a second node (50), a first loading circuit (54, 56), a second loading circuit (58, 60), a third loading circuit (64) and a buffer circuit (62). The first loading circuit couples a first logic state to the first node responsive to a first state of a control signal. The second loading circuit couples a second logic state to the first node responsive to a second state of the control signal. The buffer circuit electrically couples the first and second nodes. The first loading circuit, second loading circuit and buffer circuit are characterized by a first, a second and a third predetermined electrical impedance, respectively. The third loading circuit is coupled to the second node and is characterized by a fourth predetermined electrical impedance. The disclosed delay matching circuit propagates a clock signal input with a delay equal to the Clock-to-Q delay associated with a flip-flop constructed with similar circuit elements.

Abstract: A decimating memory includes a memory having addressable memory locations. The memory forms a plurality of registers, each of the registers including at least one addressable memory location. The plurality of registers form a forward shifting data section and a reverse shifting data section. A first decoder operates the registers in the forward shifting data section and all but a first of the registers in the reverse shifting data section as FIFO registers via read and write addressing of the addressable memory locations to input and output data samples. The read and write addressing of the addressable memory locations is offset with respect to one another to provide a decimation factor. A paintbrush decoder operates the first register in the reverse shifting data section as a LIFO register for reverse sequencing data samples within blocks of data samples received from the forward shifting data section. Each of the registers in the forward shifting and reverse shifting data sections provide an output.

Abstract: Decimation circuitry having a forward shifting data section receiving data samples in order including a plurality of forward decimation registers coupled in-line and providing a forward register output. Each forward decimation register operates as a first-in-first-out (FIFO) register having a decimation depth. A backward shifting data section includes a plurality of backward decimation registers having a decimation depth coupled in-line and providing a backward register output. One of the backward decimation registers which receives data samples in sequence from one of the forward decimation registers can function as both a last-in-first-out (LIFO) and a FIFO register, when a LIFO register, it operates to reverse blocks of data samples wherein the size of each block corresponds to the decimation rate. Each reversed block is then shifted through the backward shifting data section. Each of the other backward decimation registers operates as FIFO register.

Abstract: A decimating memory includes a memory having addressable memory locations. The memory forms a plurality of registers, each of the registers including at least one addressable memory location. The plurality of registers form a forward shifting data section and a reverse shifting data section. A first decoder operates the registers in the forward shifting data section and all but a first of the registers in the reverse shifting data section as first in first out registers via read and write addressing of the addressable memory locations to input and output data samples. The read and write addressing of the addressable memory locations is offset with respect to one another to provide a decimation factor. A paintbrush decoder operates the first register in the reverse shifting data section as a last in first out register for reverse sequencing data samples within blocks of data samples received from the forward shifting data section.

Abstract: Each cross-point includes a first and second storage device with the next cycle information being stored in the first storage device and transferred to the second storage device which has the present cycle information. The output of the second storage means is used in combination with a second controlling input to control the switch or logic at a cross-point. In one embodiment, the cross-point state is stored in the storage devices and is combined with the input data to provide an output on the data output line. In another embodiment, input data is stored in the storage devices and is combined with input state selects to provide an output on the data output line.