Patents by Inventor William F. Keenan

William F. Keenan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5367167
    Abstract: A bolometer for detecting radiation in a spectral range is described herein. The bolometer includes an integrated circuit substrate 122 and a pixel body 120 spaced from the substrate 122 by at least one pillar 124. The pixel body 120 comprises an absorber material 132, such as titanium for example, for absorbing radiation in the spectral range, which may be 7 to 12 microns for example. The absorber material 132 heats the pixel body 120 to a temperature which is proportional to the absorbed radiation. An insulating material 134 is formed over the absorber material 132. In addition, a variable resistor material 136, possible amorphous silicon for example, with an electrical resistance corresponding to the temperature of the pixel body 120 is formed over said insulating layer 134. A current flows through the variable resistor material 136 substantially parallel to the integrated circuit substrate 122 for detection. Other systems and methods are also disclosed.
    Type: Grant
    Filed: August 16, 1993
    Date of Patent: November 22, 1994
    Assignee: Texas Instruments Incorporated
    Inventor: William F. Keenan
  • Patent number: 5288649
    Abstract: A bolometer for detecting radiation in a spectral range is described herein. The bolometer includes an integrated circuit substrate 122 and a pixel body 120 spaced from the substrate 122 by at least one pillar 124. The pixel body 120 comprises an absorber material 132, such as titanium for example, for absorbing radiation in the spectral range, which may be 7 to 12 microns for example. The absorber material 132 heats the pixel body 120 to a temperature which is proportional to the absorbed radiation. An insulating material 134 is formed over the absorber material 132. In addition, a variable resistor material 136, possible amorphous silicon for example, with an electrical resistance corresponding to the temperature of the pixel body 120 is formed over said insulating layer 134. A current flows through the variable resistor material 136 substantially parallel to the integrated circuit substrate 122 for detection. Other systems and methods are also disclosed.
    Type: Grant
    Filed: September 25, 1992
    Date of Patent: February 22, 1994
    Assignee: Texas Instruments Incorporated
    Inventor: William F. Keenan
  • Patent number: 5196703
    Abstract: A method of detecting the intensity of radiation emanating from an object 116 relative to a background level at a pixel detector 120 is disclosed herein. A resistive element 122 with a resistance dependent upon the intensity of radiation impinging the detector 120 and having first and second terminals is provided along with an integration element 124 coupled to the first terminal of the resistive element. The first terminal is set to a reference voltage. The radiation is then defocused such that the radiation impinging the detector 120 is proportional to the background radiation level and a first voltage is applied to the second terminal of the resistive element 122 such that the integration element 124 discharges to a background voltage level.
    Type: Grant
    Filed: September 27, 1991
    Date of Patent: March 23, 1993
    Assignee: Texas Instruments Incorporated
    Inventor: William F. Keenan