Patents by Inventor William G. Einthoven

William G. Einthoven has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of growing a semiconductor material by epilaxy
    Patent number: 5342805
    Abstract: This invention concerns itself with an improved method of producing sharply defined misfit dislocations; (MD) with a new, inexpensive method of doping these misfit dislocations with Au; with invention that a combination of Au and Pt doping in misfit dislocations is superior to any amount of Au and to some specific placements of the misfit dislocations in the device structure.
    Type: Grant
    Filed: July 1, 1993
    Date of Patent: August 30, 1994
    Assignee: G.I. Corporation
    Inventors: Joseph Y. Chan, Larry Laterza, Dennis Garbis, William G. Einthoven
  • Method of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the material
    Patent number: 5298457
    Abstract: The all epitaxial process starts with a high resistivity silicon substrate. Alternating layers of silicon and silicon-germanium are epitaxially grown on the substrate under conditions which create a region with misfit dislocations. A low resistivity silicon layer is then grown over the region. The material is inverted such that the high resistivity layer can be used to form the base of the device. The thickness of the high resistivity layer is adjusted to equal the width of the base of the semiconductor device to be fabricated.
    Type: Grant
    Filed: July 1, 1993
    Date of Patent: March 29, 1994
    Assignee: G. I. Corporation
    Inventors: William G. Einthoven, Joseph Y. Chan, Dennis Garbis