Patents by Inventor William Gregory Flynn

William Gregory Flynn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photon tunneling light emitting diodes and methods
    Patent number: 8217399
    Abstract: Embodiments described herein include LEDs that promote photon tunneling. One embodiment of an LED device can have a quantum well layer adapted to generate light having a wavelength, a p-doped alloy layer on a first side of the quantum well layer and an n-doped alloy layer on the other side of the quantum well layer. The device can also include an electrode electrically connected to the p-doped alloy layer and an electrode electrically connected to the n-doped alloy layer. According to one embodiment the thickness of the n-doped alloy layer is less than the wavelength of light generated by the quantum well layer to allow light generated by the quantum well layer to tunnel to the medium (e.g., air). In another embodiment, the entire layer structure can have a thickness that is less than the wavelength.
    Type: Grant
    Filed: July 29, 2009
    Date of Patent: July 10, 2012
    Assignee: Illumitex, Inc.
    Inventors: Dung T. Duong, William Gregory Flynn
  • PHOTON TUNNELING LIGHT EMITTING DIODES AND METHODS
    Publication number: 20100025655
    Abstract: Embodiments described herein include LEDs that promote photon tunneling. One embodiment of an LED device can have a quantum well layer adapted to generate light having a wavelength, a p-doped alloy layer on a first side of the quantum well layer and an n-doped alloy layer on the other side of the quantum well layer. The device can also include an electrode electrically connected to the p-doped alloy layer and an electrode electrically connected to the n-doped alloy layer. According to one embodiment the thickness of the n-doped alloy layer is less than the wavelength of light generated by the quantum well layer to allow light generated by the quantum well layer to tunnel to the medium (e.g., air). In another embodiment, the entire layer structure can have a thickness that is less than the wavelength.
    Type: Application
    Filed: July 29, 2009
    Publication date: February 4, 2010
    Applicant: Illumitex, Inc.
    Inventors: Dung T. Duong, William Gregory Flynn