Patents by Inventor William J. Slattery

William J. Slattery has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5151559
    Abstract: This is a semiconductor chip in which the conductive path between the chip and the lead frame via wires can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point. This is accomplished by placing an insulating layer on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires.
    Type: Grant
    Filed: December 11, 1991
    Date of Patent: September 29, 1992
    Assignee: International Business Machines Corporation
    Inventors: H. Ward Conru, Gary H. Irish, Francis J. Pakulski, William J. Slattery, Stephen G. Starr, William C. Ward
  • Patent number: 5086018
    Abstract: A method of making a semiconductor chip in which the conductive path between the chip and the lead frame via wires can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point. This is accomplished by placing an insulating layer on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires.
    Type: Grant
    Filed: May 2, 1991
    Date of Patent: February 4, 1992
    Assignee: International Business Machines Corporation
    Inventors: H. Ward Conru, Gary H. Irish, Francis J. Pakulski, William J. Slattery, Stephen G. Starr, William C. Ward
  • Patent number: 4761332
    Abstract: A method of planarizing or smoothing the surface of a ceramic substrate by deposition of a silicon nitride layer. The silicon nitride in addition to planarizing the surface forms an alpha particle barrier. The substrates suitable for planarization with silicon nitride in accordance with the method of the present invention are sintered oxide particles which are bonded with a silicon bonding phase. The silicon content of the silicon bonding phase is greater than the silicon content of the aggregate of the oxide particles. The silicon nitride is preferably deposited by plasma enhanced chemical vapor deposition, and the silicon bonding phase is preferably a glass.
    Type: Grant
    Filed: February 24, 1987
    Date of Patent: August 2, 1988
    Assignee: International Business Machines Corporation
    Inventors: Kenneth L. Elias, Stuart R. Martin, William J. Slattery
  • Patent number: 4659585
    Abstract: A method of planarizing or smoothing the surface of a ceramic substrate by deposition of a silicon nitride layer. The silicon nitride in addition to planarizing the surface forms an alpha particle barrier. The substrates suitable for planarization with silicon nitride in accordance with the method of the present invention are sintered oxide particles which are bonded with a silicon bonding phase. The silicon content of the silicon bonding phase is greater than the silicon content of the aggregate of the oxide particles. The silicon nitride is preferably deposited by plasma enhanced chemical vapor deposition, and the silicon bonding phase is preferably a glass.
    Type: Grant
    Filed: June 24, 1985
    Date of Patent: April 21, 1987
    Assignee: International Business Machines Corporation
    Inventors: Kenneth L. Elias, Stuart R. Martin, William J. Slattery