Patents by Inventor William James Taylor, III

William James Taylor, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming a dielectric cap layer on a metal gate structure
    Patent number: 8728908
    Abstract: Disclosed herein are various methods of forming metal-containing insulating material regions on a metal layer of a gate structure of a semiconductor device. In one example, the method includes forming a gate structure of a transistor, the gate structure comprising at least a first metal layer, and forming a first metal-containing insulating material region in the first metal layer by performing a gas cluster ion beam process using to implant gas molecules into the first metal layer.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: May 20, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Ruilong Xie, Chang Seo Park, William James Taylor, III, John Iacoponi