Abstract: A thermistor chip has an elongated ceramic thermistor body with an outside surface and opposite ends. A dielectric envelope excapsulates the outer surface of the body, and conductive terminal caps are formed on the end of the body. The material of the thermistor is Mn.sub.2 O.sub.3, NiO, Co.sub.3 O.sub.4, Al.sub.2 O.sub.3, CuO, or Fe.sub.2 O.sub.3.

Abstract: A method of making a thermistor comprising the steps of making a layer of thermistor ceramic material comprised substantially of Mn.sub.2 O.sub.3, NiO, Co.sub.3 O.sub.4, Al.sub.2 O.sub.3, CuO, or Fe.sub.2 O.sub.3, having upper and lower surfaces. A first dielectric material comprised of low K Al.sub.2 O.sub.3 or the like is placed on the upper and lower surfaces of the layer, and then is cut into a plurality of elongated strips. The layer is created by blading a slurrey of the ceramic material to create a plurality of uncured sheets; placing the sheets in superimposed position, and then making the monolithic layers from the sheets by applying heat and pressure thereto, and then firing the monolithic layer with heat of increased magnitude. The strips are encapsulated in an envelope of the dielectric material, and terminal connections comprised of silver, Ni, Sn and Pb are imposed thereon. A thermistor chip or strip comprising an elongated ceramic thermistor body with an outside surface and opposite ends.

Abstract: The present invention relates to an improved Schottky barrier device wherein the leakage current present in the reverse bias mode attributed to the presence of an electric field at the Schottky barrier (18) is significantly reduced by the inclusion of one or more field shields (22), P.sup.+ -type diffusions located under the metal anode (16) of the Schottky barrier device at the Schottky barrier (18). The P.sup.+ -type field shields, which are disposed in a pattern on the surface of the Schottky barrier, reduce the surface electric field present, thereby significantly reducing the leakage current related thereto.