Abstract: A page mode/nibble mode dynamic random access memory (DRAM) comprising row and column decoders, the column decoder further comprising a column address buffer and a column address buffer counter. The page mode/nibble mode DRAM also comprises a buffer controller means adapted to receive a write enable signal and to determine whether the DRAM should be placed in a page mode or a nibble mode to facilitate the particular memory access requested by a memory controller. An asserted write enable signal, may indicate, for example, a write operation, thereby calling for the page mode/nibble mode DRAM to move into a page mode to effectuate the write operation. The page mode/nibble mode DRAM also utilizes the write enable signal in the conventional manner, to indicate the initiation of a particular type of memory access, namely a write operation or a read operation.