Abstract: A microelectronic package and method for forming such a package. In one embodiment, the package can include a microelectronic substrate having first connection sites, and a support member having second connection sites and third connection sites, with the third connection sites accessible for electrical coupling to other electrical structures. A plurality of electrically conductive couplers are connected between the first connection sites and the second connection sites, with neighboring conductive couplers being spaced apart to define at least one flow channel. The at least one flow channel is in fluid communication with a region external to the microelectronic substrate. The generally non-conductive material can be spaced apart from the support member to allow the microelectronic substrate to be separated from the support member.

Abstract: A microelectronic package and method for forming such a package. In one embodiment, the package can include a microelectronic substrate having first connection sites, and a support member having second connection sites and third connection sites, with the third connection sites accessible for electrical coupling to other electrical structures. A plurality of electrically conductive couplers are connected between the first connection sites and the second connection sites, with neighboring conductive couplers being spaced apart to define at least one flow channel. The at least one flow channel is in fluid communication with a region external to the microelectronic substrate. The generally non-conductive material can be spaced apart from the support member to allow the microelectronic substrate to be separated from the support member.

Abstract: A system for monitoring ion implantation processing on a semiconductor wafer (10), comprising a plurality of Faraday cups (12-28, 32) for collecting charge that is not deposited on the wafer (10) during ion implantation processing, means (40) for determining Faraday cups (12-28, 32) that are collecting charge in a particular position of an ion beam (30) relative to the wafer (10) and means (40) for determining the particular ion beam position relative to the wafer (10) on the basis of the Faraday cups (12-28, 32) collecting charge. The present invention further relates to a method of monitoring ion implantation processing.

Abstract: A microelectronic package and method for forming such a package. In one embodiment, the package can include a microelectronic substrate having first connection sites, and a support member having second connection sites and third connection sites, with the third connection sites accessible for electrical coupling to other electrical structures. A plurality of electrically conductive couplers are connected between the first connection sites and the second connection sites, with neighboring conductive couplers being spaced apart to define at least one flow channel. The at least one flow channel is in fluid communication with a region external to the microelectronic substrate. The generally non-conductive material can be spaced apart from the support member to allow the microelectronic substrate to be separated from the support member.

Abstract: A microelectronic package and method for forming such a package. In one embodiment, the package can include a microelectronic substrate having first connection sites, and a support member having second connection sites and third connection sites, with the third connection sites accessible for electrical coupling to other electrical structures. A plurality of electrically conductive couplers are connected between the first connection sites and the second connection sites, with neighboring conductive couplers being spaced apart to define at least one flow channel. The at least one flow channel is in fluid communication with a region external to the microelectronic substrate. The generally non-conductive material can be spaced apart from the support member to allow the microelectronic substrate to be separated from the support member.

Abstract: A processing tool bay within a semiconductor fabrication site, including a plurality of semiconductor processing tools for processing wafers being arranged in two opposite rows. An intrabay transport system for transporting wafer carriers around the process tool bay at least in a vertical plane in front of one of said two rows of semiconductor process tools comprises at least one vehicle for receiving and delivering a wafer carrier to and from any one semiconductor process tool of said plurality of semiconductor process tools, and a vehicle guiding mechanism. The vehicle comprises a circular compartment structure including a plurality of compartments for buffering said wafer carrier between receiving it at a first location and delivering it at a second location. Each compartment is arranged for accommodating one wafer carrier. The compartment structure is rotatable around a symmetry axis of itself for an alignment.

Abstract: The present invention relates to a method of cleaning a wafer chuck (10) by an automated system that supplies a solvent to a chuck surface (12), washes the chuck surface (12), and dries the chuck surface (12) by spinning the chuck (10), in one embodiment. In another embodiment, the chuck surface (12) is dried by pulling a vacuum on the chuck surface (12) or flowing a gas on the chuck surface (12). Additionally, a brush can be used to wash the chuck surface (12).

Abstract: The present disclosure is a method for in situ monitoring of backside contamination on a semiconductor wafer (120) between processing steps which are performed in a multi-chamber tool (500). In a first form, a laser source (220) and a detector (210) are mounted on a robotic arm (110, 111), or within a semiconductor processing tool (500). The laser (220) and detector (210) move along with the robotic arm (110) as the robotic arm (110) shuffles the wafer (120) between processing carriers (610-650) and chambers (510-540). While in transit the backside of the semiconductor wafer (120) is scanned by a laser beam (221), whereby contamination is detected by a detector (210). The laser (220) and detector (210) then scan the backside of the wafer (120) while the robotic arm (110) is in transit and/or while the robotic arm (110) is stationary in the processing sequence.