Abstract: The present invention relates to an improved, efficient, scalable process to prepare intermediate compounds, such as compound 5M, having the structure useful for the synthesis of compounds that target KRAS G12C mutations, such as

Abstract: The present invention relates to an improved, efficient, scalable process to prepare intermediate compounds, such as compound 5M, having the structure useful for the synthesis of compounds that target KRAS G12C mutations, such as

Abstract: The present invention relates to an improved, efficient, scalable process to prepare intermediate compounds, such as compound 5M, having the structure useful for the synthesis of compounds that target KRAS G12C mutations, such as

Abstract: A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially through the buffer layer. The active and cap layers a laterally etched and a semi-insullating material is overlayed the sidewalls. A further etching leaves a thin wall of the semi-insulating material surrounding the active layer. 1.3 .mu.m InGaAsP lasers with 3 dB bandwidths of 24 GHz and intrinsic resonance frequencies in excess of 22 GHz have been successfully fabricated. This is the highest bandwidth ever reported for a semiconductor laser, and the highest resonance frequency for InGaAsP lasers. Excellent modulation efficiencies are observed to high frequencies.

Abstract: An optical preamplifier includes a semiconductor optical amplifier monolithically integrated with an optical detector and electrically isolated from the detector by an isolation region. The isolation region consists of a low-loss, preferably transparent, insulating material whose index of refraction is matched to at least the refractive index of the amplifier, leading to reduced facet reflectivity at the amplifier output facet. Alternative device structures may include a waveguiding layer in the isolation region, a grating integrated with or following the optical amplifier, and a tuning region positioned between the amplifier and isolation region for filtering spontaneous emission.

Abstract: A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically etched through the cap, cladding and active layers and partially through the buffer layer. The active and cap layers a laterally etched and a semi-insulating material is overlaid the sidewalls. A further etching leaves a thin wall of the semi-insulating material surrounding the active layer. 1.3 .mu.m InGaAsP lasers with 3 dB bandwidths of 24 GHz and intrinsic resonance frequencies in excess of 22 GHz have been successfully fabricated. This is the highest bandwidth ever reported for a semiconductor laser, and the highest resonance frequency for InGaAsP lasers. Excellent modulation efficiencies are observed to high frequencies.

Abstract: A monolithically integrated optical preamplifier comprises an amplifying region, an optical detection region for detecting amplified light, and an optically transparent and electrically insulating isolation region interposed between the amplifying and optical detection regions. The amplifying region achieves reduced facet reflectivity by being designed to have a large spot size, single-traverse mode waveguide amplifier oriented at an angle with respect to a crystal plane through the preamplifier. The isolation region is preferably an air gap.

Abstract: Thin film epitaxial layers of mixed oxide compounds, or of solid solutions of two mixed oxides, are deposited on a suitable single crystal substrate. Growth is achieved by introducing the substrate into a crucible containing a saturated solution of the oxide(s) in a molten alkali metal halide having additional undissolved oxide(s) present in the crucible. Evaporation of the alkali metal halide solvent produces and/or maintains the supersaturated condition, which is relieved by epitaxial deposition of the oxide(s) onto the substrate. When two mixed oxides are dissolved in the solvent, the composition of the film is determined and fixed by the temperature of growth. To produce a thin film of a constant composition, growth is conducted isothermally. To produce a thin film with a graded composition throughout its thickness, growth is conducted by slowly cooling the temperature of the solution.