Patents by Inventor William R. Roche

William R. Roche has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a gate electrode on a semiconductor device and a device incorporating same
    Patent number: 7087509
    Abstract: The present invention is directed to a semiconductor device having a gate electrode includes of a plurality of sidewalls, each having a recess formed therein. The present invention is also directed to a method of forming a semiconductor device. In one illustrative embodiment, the method comprises forming a layer of dopant material in a layer of polysilicon and etching the layer of polysilicon to define a gate electrode having a plurality of sidewalls, each of which have a recess formed therein.
    Type: Grant
    Filed: September 28, 2000
    Date of Patent: August 8, 2006
    Assignee: Advanced Micro Devices, Inc.
    Inventors: William R. Roche, David Donggang Wu, Massud Aminpur, Scott D. Luning
  • Method of reducing photoresist shadowing during angled implants
    Patent number: 6569606
    Abstract: The present invention is directed to a method of forming halo implants in a semiconductor device. In one illustrative embodiment, the method comprises forming a structure above a semiconducting substrate, forming a layer of photoresist above the structure and the substrate, and positioning the substrate in an exposure tool that has a light source and a focal plane. The method further comprises positioning the surface of the layer of photoresist in an exposure plane that is different from the focal plane of the exposure tool, exposing the photoresist to the light source of the exposure tool while the surface of the photoresist is in the exposure plane, and developing the layer of photoresist to define an opening in the layer of photoresist around the structure on the substrate.
    Type: Grant
    Filed: July 27, 2000
    Date of Patent: May 27, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: David Donggang Wu, William R. Roche, Massud Aminpur, Scott D. Luning, Karen L. E. Turnqest
  • Method for forming vertical profile of polysilicon gate electrodes
    Patent number: 6391751
    Abstract: The present invention is directed to a method of forming a semiconductor device. In one illustrative embodiment, the method comprises forming a layer of polysilicon, forming a masking layer above the layer of polysilicon, and patterning the masking layer to expose portions of the layer of polysilicon. The method further comprises implanting a dopant material into the exposed portions of the layer of polysilicon to convert the exposed portions of the layer of polysilicon to substantially amorphous silicon, and performing an etching process to remove the substantially amorphous silicon to define a gate electrode.
    Type: Grant
    Filed: July 27, 2000
    Date of Patent: May 21, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: David Donggang Wu, William R. Roche, Scott D. Luning, Karen L. E. Turnqest