Abstract: The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a working surface. The main metal layer has at least one pair of current path regions. Each of the current path region pairs is formed in generally a regular polygonal shape that is generally symmetric about a plane of symmetry that is perpendicular to the working surface of the substrate. The shield is patterned into segments that are generally symmetric about the plane of symmetry. Medial portions of at least some segments of the shield are formed generally perpendicular to the plane of symmetry as the medial portions cross the plane of symmetry.

Abstract: The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a working surface. The main metal layer has at least one pair of current path regions. Each of the current path region pairs is formed in generally a regular polygonal shape that is generally symmetric about a plane of symmetry that is perpendicular to the working surface of the substrate. The shield is patterned into segments that are generally symmetric about the plane of symmetry. Medial portions of at least some segments of the shield are formed generally perpendicular to the plane of symmetry as the medial portions cross the plane of symmetry.

Abstract: The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a working surface. The main metal layer has at least one pair of current path regions. Each of the current path region pairs is formed in generally a regular polygonal shape that is generally symmetric about a plane of symmetry that is perpendicular to the working surface of the substrate. The shield is patterned into segments that are generally symmetric about the plane of symmetry. Medial portions of at least some segments of the shield are formed generally perpendicular to the plane of symmetry as the medial portions cross the plane of symmetry.

Abstract: An electrostatic discharge protection circuit for an integrated circuit that reduces unwanted transient currents during normal operations. In one embodiment, the electrostatic discharge protection circuit includes one or more electrostatic bus lines, a plurality of signal bonding pads and charge pumps. The one or more electrostatic bus lines are used to direct electrostatic discharge around internal circuitry. The plurality of signal bonding pads are used to receive external voltage signals. Each signal bonding pad is coupled to an associated electrostatic bus line via an unidirectional conducting device. A charge pump is used on each electrostatic bus line to precharge its associated electrostatic bus line to an associated predetermined voltage level.

Abstract: The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a working surface. The main metal layer has at least one pair of current path regions. Each of the current path region pairs is formed in generally a regular polygonal shape that is generally symmetric about a plane of symmetry that is perpendicular to the working surface of the substrate. The shield is patterned into segments that are generally symmetric about the plane of symmetry. Medial portions of at least some segments of the shield are formed generally perpendicular to the plane of symmetry as the medial portions cross the plane of symmetry.

Abstract: The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a working surface. The main metal layer has at least one pair of current path regions. Each of the current path region pairs is formed in generally a regular polygonal shape that is generally symmetric about a plane of symmetry that is perpendicular to the working surface of the substrate. The shield is patterned into segments that are generally symmetric about the plane of symmetry. Medial portions of at least some segments of the shield are formed generally perpendicular to the plane of symmetry as the medial portions cross the plane of symmetry.

Abstract: The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a working surface. The main metal layer has at least one pair of current path regions. Each of the current path region pairs is formed in generally a regular polygonal shape that is generally symmetric about a plane of symmetry that is perpendicular to the working surface of the substrate. The shield is patterned into segments that are generally symmetric about the plane of symmetry. Medial portions of at least some segments of the shield are formed generally perpendicular to the plane of symmetry as the medial portions cross the plane of symmetry.

Abstract: An electrostatic discharge protection circuit for an integrated circuit that reduces unwanted transient currents during normal operations. In one embodiment, the electrostatic discharge protection circuit includes one or more electrostatic bus lines, a plurality of signal bonding pads and charge pumps. The one or more electrostatic bus lines are used to direct electrostatic discharge around internal circuitry. The plurality of signal bonding pads are used to receive external voltage signals. Each signal bonding pad is coupled to an associated electrostatic bus line via an unidirectional conducting device. A charge pump is used on each electrostatic bus line to precharge its associated electrostatic bus line to an associated predetermined voltage level.

Abstract: The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a working surface. The main metal layer has at least one pair of current path regions. Each of the current path region pairs is formed in generally a regular polygonal shape that is generally symmetric about a plane of symmetry that is perpendicular to the working surface of the substrate. The shield is patterned into segments that are generally symmetric about the plane of symmetry. Medial portions of at least some segments of the shield are formed generally perpendicular to the plane of symmetry as the medial portions cross the plane of symmetry.

Abstract: A reference current/voltage gnereator is insensitive to variations in power supply voltage and temperature. The operational parameters of matched current mirror transistors of the generator are effectively equalized by an auxiliary bias amplifier, whose transistors are matched with and connected to the current mirror transistors of the generator in such a manner as to maintain the same electrical parameters in each of the current mirror legs of the current generator, irrespective of variations in supply voltage. Temperature insensitivity is achieved by making the output current mirror a current that is the sum of two currents whose current paths complementary temperature coefficients.

Abstract: A reference current/voltage gnereator is insensitive to variations in power supply voltage and temperature. The operational parameters of matched current mirror transistors of the generator are effectively equalized by an auxiliary bias amplifier, whose transistors are matched with and connected to the current mirror transistors of the generator in such a manner as to maintain the same electrical parameters in each of the current mirror legs of the current generator, irrespective of variations in supply voltage. Temperature insensitivity is achieved by making the output current mirror a current that is the sum of two currents whose current paths complementary temperature coefficients.

Abstract: Airbridge structures and processes for making air bridge structures and integrated circuits are disclosed. One airbridge structure has metal conductors 24 encased in a sheath of dielectric material 249. The conductors extend across a cavity 244 and a semiconductor substrate 238. In one embodiment, the conductors traversing the cavity 244 are supported by posts 248 that extend from the substrate. In another embodiment, oxide posts 258 extend from the substrate to support the conductors. In another embodiment, trenches 101 are made in a device substrate 110 bonded to a handle substrate 100. The trenches are filled with a dielectric and a conductor pattern is formed over the filled trenches. The substrate material between the conductors is then removed to leave a pattern of posts 116, 114, 112 that included dielectrically encased conductors 106. In another bonded wafer embodiment, conductors 204 are encased in a dielectric above a sacrificial device region.

Abstract: In one embodiment a substrate 14 is patterned to have high and low conductive areas 110, 112, respectively. Metal lines 104, 108 in dielectric layer 16 pass transversely over the areas 110, 112. The areas 112 interrupt parasitic inductive current induced in the substrate 14.

Abstract: Conductive elements which provide interconnections (air bridges between circuits) and components such as capacitors and inductors may be incorporated in the devices in a manner to reduce parasitic effects in the operation of the devices while providing close spacing which enhances the performance of the devices at high frequency. Separate substrates are provided respectively having the integrated circuits formed therein and covering, preferably sealing the integrated circuits. The air bridge conductive components (interconnections, capacitors or inductors) are formed separately in the covering substrate which is assembled with the substrate having the integrated circuit as a lid which seals and packages the circuits and the conductive element or component contained in the lid. The conductive component may be separated by cavities formed in the lid substrate or in the substrate having the integrated circuit device already formed therein.

Abstract: Load-monitoring feedback is used to maintain the slew rate of a line driver circuit at a prescribed rate that is independent of the effective load of the line being driven. This load-monitoring feedback control makes it possible to drive the line with an amplified output signal that faithfully tracks the input signal and conforms with prescribed slew rate and rise/fall time specifications, irrespective of characteristics of the signal line, which may vary over a specified range of component values. In a first embodiment, slew rate control is effected by increasing or decreasing the amount of charge on a reference capacitor and thereby the drive current to an output driver FET, in accordance with the change in state of the output of an output terminal-monitoring voltage threshold comparator relative to termination of a prescribed (one-shot established) time window.

Abstract: Semiconductor devices 340 are formed in semiconductor wafer 300. Contact pads 332 are formed in each die 330. An interconnect connects the contact pads 332 to die surface contact regions 210, 212. Scribe trenches 348 are formed in device wafer 300; corresponding trenches 358 are formed in cover wafer 360. The cover wafer 360 is thinned to open scribe trenches 348. Conductive vias 310-313 connect the contact pads 210, 212 to external surface bump contacts 333.

Abstract: A constant slew rate amplifier has a precision internal slew rate control reference, that generates respective positive-going and negative-going voltages, associated with corresponding excursions in the input signal. These slew rate-defining voltages are decoupled from the line, making it possible to drive the line with an amplified output signal that faithfully follows the input signal and conforms with prescribed slew rate and rise/fall time specifications, irrespective of the capacitance of the line. In addition, the constant slew rate amplifier of the present invention is configured to minimize power dissipation during non-transitional signal conditions, while providing substantial current to rapidly drive the line from one state to another in accordance with the input signal.

Abstract: A Schmitt trigger-configured overvoltage protection circuit has a hysteresis turn-on, turn-off characteristic that minimizes its sensitivity to noise, and is effective to protect an integrated circuit against a DC overvoltage condition, and electrostatic discharge-based transients, while allowing `hot` insertion of a device containing the clamping circuit into an already powered-up system. The protection circuit employs a reference device, such as a Zener diode, that enables the clamping circuit trigger threshold to be set at a value that is independent of the power supply voltage.

Abstract: Semiconductor devices 340 are formed in semiconductor wafer 300. Contact pads 332 are formed in each die 330. An interconnect connects the contact pads 332 to die surface contact regions 210, 212. Scribe trenches 348 are formed in device wafer 300; corresponding trenches 358 are formed in cover wafer 360. The cover wafer 360 is thinned to open scribe trenches 348. Conductive vias 310-313 connect the contact pads 210, 212 to external surface bump contacts 333.

Abstract: A sine/cosine generator with coarse and fine angles having compressed sine and cosine read only memories (ROMS) by use of symmetry of coarse angles about .pi./4 and, optionally, symmetry of fine angles about 0. The output of the ROMs directly feed multiplexers for utilization of the compressed storage. Addressing of complementary coarse angles is with one's complementing of the address and of complementary fine angles is with two's commplementing of the address. Fine sines and cosines are stored in recoded version for direct use in multipliers for computations using the sum of angles formulas.