Abstract: Systems and methods are provided for ranking electronic information based on determined similarities. In one aspect a set of unique features are determined from a collection of electronic objects. A graph is constructed in which electronic object are represented as object nodes and determined features are represented as feature nodes. The object nodes are interconnected by a weighted edge to at least one feature node. Scores for the object nodes and the feature nodes are computed using a determined set of anchor nodes and a determined weighted adjacency matrix. The object nodes and the feature nodes of the graph are ranked and displayed based on the computed scores. In one aspect, the scores and the ranks for the object nodes and the feature nodes are dynamically updated and displayed based on user preferences.

Abstract: A first circuit representation of a given function is obtained at a first processing device. The given function comprises at least two computer programming switch statement clauses. A second circuit representation is generated at the first processing device from the first circuit representation wherein the at least two computer programming switch statement clauses are respectively represented by at least two tree circuits that are embedded in the second circuit representation such that the second circuit representation is characterized by a given cost (e.g., a minimum cost). The second circuit representation is encrypted at the first processing device, and sent to a second processing device for secure evaluation of the given function by the second processing device.

Abstract: A first circuit representation of a given function is obtained at a first processing device. The given function comprises at least two computer programming switch statement clauses. A second circuit representation is generated at the first processing device from the first circuit representation wherein the at least two computer programming switch statement clauses are respectively represented by at least two tree circuits that are embedded in the second circuit representation such that the second circuit representation is characterized by a given cost (e.g., a minimum cost). The second circuit representation is encrypted at the first processing device, and sent to a second processing device for secure evaluation of the given function by the second processing device.

Abstract: Systems and methods are provided for organizing and processing information in a graph having a number of nodes interconnected by a number of edges. An array E lists neighboring nodes for nodes of the graph that have at least one neighboring node in a determined order of the nodes. Positions in array E of a last neighboring node listed in array E for respective nodes are listed as corresponding entries in an array V based on the determined order of the nodes. In various aspects, array E and array V are used to determine information for the graph, including degrees or neighboring nodes of one or more given nodes of the graph. The system and methods disclosed herein are applicable for determining relative ranks for the nodes of the graph.

Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations.

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

Abstract: In one example embodiment, a method of determining a hierarchical community decomposition of a plurality of nodes includes determining one or more subsets of the plurality of nodes at at least one level of the hierarchical community decomposition, the determined one or more subsets being non-detachable and non-linkable. The method further includes forming the at least one level of the hierarchical community decomposition based on the determined one or more subsets.

Abstract: Systems and methods are provided for constructing a collection of one or more tree sub-graph representations of a graph including multiple interconnected nodes, where the one or more tree sub-graph representations of the graph are used to estimate the shortest distance between any two nodes of a graph. One of the features of the systems and methods disclosed herein is a methodology for the selection or designation of root nodes for constructing the collection of the one or more tree sub-graph representations. Another feature of the present disclosure is a methodology of expanding the parent nodes in a given level of the tree sub-graph representations into one or more child nodes in a successive level of the tree-graph representations based on a descending order of degree of the parent nodes.

Abstract: A system and method for preserving privacy includes selecting a plurality of lexicons and executing a plurality of random operations through at least one web application using the plurality of lexicons. The system and method models the plurality of random operations based on typical usage to mask actual operations or searches executed by a user.

Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.

Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.

Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations.

Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.

Abstract: An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

Abstract: A showerhead electrode assembly of a plasma processing apparatus includes a thermal control plate attached to a showerhead electrode, and a top plate attached to the thermal control plate. At least one thermal bridge is provided between opposed surfaces of the thermal control plate and the top plate to allow electrical and thermal conduction between the thermal control plate and top plate. A lubricating material between the thermal bridge and the top plate minimizes galling of opposed metal surfaces due to differential thermal expansion between the top plate and thermal control plate. A heater supported by the thermal control plate cooperates with the temperature controlled top plate to maintain the showerhead electrode at a desired temperature.

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

Abstract: An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

Abstract: An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.