Patents by Inventor William So

William So has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12003223
    Abstract: Systems and apparatuses are disclosed that include an RF generator configured to generate RF signals having a wavelength. Amplifiers are configured to receive and amplify the RF signals from the RF generator and are separated from each other by a separation distance in a range between about 0.2 times the wavelength and about 10.0 times the wavelength. A power management system is configured to control one or more of the amplifiers based on information received that is associated with the RF signals.
    Type: Grant
    Filed: June 22, 2021
    Date of Patent: June 4, 2024
    Assignee: Epirus, Inc.
    Inventors: Denpol Kultran, Yiu Man So, Albert Montemuro, Jacob Zinn Echoff, Michelle Marasigan, Michael John Hiatt, Jason Reis Chaves, Michael Alex Borisov, Jar Jueh Lee, Harry Bourne Marr, Jr., Scott William Buetow
  • Publication number: 20150008465
    Abstract: The present invention describes a buried reflective electrode with vias and mesh current spreader isolated by a reflective stack of dielectric layers (BREVMIRS). The BREVMIRS includes a reflective stack of dielectric layers, a conducting mesh, a transparent conducting layer and a first electrode layer with vias going through the stack of reflective dielectric layers, the conducting mesh and the transparent conducting layer. There is at least one via going through the conductive reflective mesh and transparent conducting electrode. The BREVMIRS may be integrated into semiconductor light emitting diode devices to improve the device efficiency and light output power.
    Type: Application
    Filed: July 3, 2014
    Publication date: January 8, 2015
    Inventors: MARIO FERNANDO SAENGER NAYVER, WILLIAM SO, JR.
  • Publication number: 20140203287
    Abstract: A nitride light emitting device comprises a current blocking Schottky junction zone formed below the p-electrode and above the active region so that current injection from the p-electrode to the area of the active region that is vertically shaded by the p-electrode is blocked by the Schottky junction zone. A method for fabricating the same is also provided.
    Type: Application
    Filed: July 21, 2012
    Publication date: July 24, 2014
    Applicant: INVENLUX LIMITED
    Inventors: JIANPING ZHANG, MARIO SAENGER, WILLIAM SO, FANGHAI ZHAO, CHUNHUI YAN
  • Patent number: 8324652
    Abstract: A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: December 4, 2012
    Assignee: Bridgelux, Inc.
    Inventors: Steven D. Lester, Frank Shum, Chao-Kun Lin, William So, Qingwei Mo
  • Patent number: 7935979
    Abstract: A light emitting apparatus includes a semiconductor layer having an electrode with two traces physically separated from one another. The light emitting apparatus further includes a wire bond electrically connecting the two traces.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: May 3, 2011
    Assignee: Bridgelux, Inc.
    Inventors: Frank Shum, William So
  • Patent number: 7622746
    Abstract: A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.
    Type: Grant
    Filed: March 17, 2006
    Date of Patent: November 24, 2009
    Assignee: Bridgelux, Inc.
    Inventors: Steven D. Lester, Frank Shum, Chao-Kun Lin, William So, Qingwei Mo
  • Publication number: 20090273001
    Abstract: A light emitting apparatus includes a semiconductor layer having an electrode with two traces physically separated from one another. The light emitting apparatus further includes a wire bond electrically connecting the two traces.
    Type: Application
    Filed: September 19, 2008
    Publication date: November 5, 2009
    Inventors: Frank Shum, William So
  • Publication number: 20070145380
    Abstract: An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.
    Type: Application
    Filed: May 19, 2006
    Publication date: June 28, 2007
    Inventors: Frank Shum, William So, Steven Lester
  • Publication number: 20050236637
    Abstract: A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of legs extending in one direction, and the second electrode has a number of legs extending in the opposite direction. At least portions of the legs of the first electrode are interspersed with and spaced apart from portions of the legs of the second electrode. This provides a configuration that enhances current spreading along the length of the legs of both electrodes.
    Type: Application
    Filed: June 13, 2005
    Publication date: October 27, 2005
    Applicant: Lumei Optoelectronics Corporation
    Inventors: Yongsheng Zhao, William So, Kevin Ma, Chyi Chern, Heng Liu, Eugene Ruddy
  • Publication number: 20050224823
    Abstract: A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of legs extending in one direction, and the second electrode has a number of legs extending in the opposite direction. At least portions of the legs of the first electrode are interspersed with and spaced apart from portions of the legs of the second electrode. This provides a configuration that enhances current spreading along the length of the legs of both electrodes.
    Type: Application
    Filed: January 28, 2005
    Publication date: October 13, 2005
    Inventors: Yongsheng Zhao, William So, Kevin Ma, Chyi Chern, Heng Liu, Eugene Ruddy