Abstract: Described herein are methods of treating a proliferative disease in a subject by administering a DNA-damaging agent and between about 8 and about 48 hours later administering to the subject a DNA-PK inhibitor. Exemplary DNA-PK inhibitors are represented by Formula (B-I): and by pharmaceutically acceptable salts thereof, wherein R1, Q, Ring A, and Ring B are as defined herein.

Abstract: A polymer composition comprises a polypropylene polymer and a salt of a branched alkyl phosphonic acid.

Abstract: Disclosed are systems, devices and methods for providing solar lighting and power to a customer by using pay-as-you-go (PAYG) technology. The PAYG technology allows a customer to make incremental payments for a solar energy system that includes a lighting unit. The payments can be made through a smartphone. A cable is used to connect an audio jack of the smartphone and a PV power jack of the lighting unit. Analog AC signals including data about activation, payment, usage and status are transmitted over the cable between the service provider and lighting unit, through a smartphone. The power jack of the lighting unit is also used to connect to a solar panel of a charging unit and a battery of the lighting unit.

Abstract: Disclosed are systems, devices and methods for providing solar lighting and power to a customer by using pay-as-you-go (PAYG) technology. The PAYG technology allows a customer to make incremental payments for a solar energy system that includes a lighting unit. The payments can be made through a smartphone. A cable is used to connect an audio jack of the smartphone and a PV power jack of the lighting unit. Analog AC signals including data about activation, payment, usage and status are transmitted over the cable between the service provider and lighting unit, through a smartphone. The power jack of the lighting unit is also used to connect to a solar panel of a charging unit and a battery of the lighting unit.

Abstract: Disclosed are systems, devices and methods for providing solar lighting and power to a customer by using pay-as-you-go (PAYG) technology. The PAYG technology allows a customer to make incremental payments for a solar energy system that includes a lighting unit. The payments can be made through a smartphone. A cable is used to connect an audio jack of the smartphone and a PV power jack of the lighting unit. Analog AC signals including data about activation, payment, usage and status are transmitted over the cable between the service provider and lighting unit, through a smartphone. The power jack of the lighting unit is also used to connect to a solar panel of a charging unit and a battery of the lighting unit.

Abstract: Disclosed are systems, devices and methods for providing solar lighting and power to a customer by using pay-as-you-go (PAYG) technology. The PAYG technology allows a customer to make incremental payments for a solar energy system that includes a lighting unit. The payments can be made through a smartphone. A cable is used to connect an audio jack of the smartphone and a PV power jack of the lighting unit. Analog AC signals including data about activation, payment, usage and status are transmitted over the cable between the service provider and lighting unit, through a smartphone. The power jack of the lighting unit is also used to connect to a solar panel of a charging unit and a battery of the lighting unit.

Abstract: A TFET includes a source region (110, 210), a drain region (120, 220), a channel region (130, 230) between the source region and the drain region, and a gate region (140, 240) adjacent to the channel region. The source region contains a first compound semiconductor including a first Group III material and a first Group V material, and the channel region contains a second compound semiconductor including a second Group III material and a second Group V material. The drain region may contain a third compound semiconductor including a third Group III material and a third Group V material.

Abstract: A microelectronic device includes a tunneling pocket within an asymmetrical semiconductive body including source- and drain wells. The tunneling pocket is formed by a self-aligned process by removing a dummy gate electrode from a gate spacer and by implanting the tunneling pocket into the semiconductive body or into an epitaxial film that is part of the semiconductive body.

Abstract: A process for forming defect-free source and drain extensions for a MOSFET built on a germanium based channel region deposits a first silicon germanium layer on a semiconductor substrate, deposits a gate dielectric layer on the silicon germanium layer, and deposits a gate electrode layer on the gate dielectric layer. A dry etch chemistry etches those layers to form a gate electrode, a gate dielectric, and a silicon germanium channel region on the semiconductor substrate. Next, an ion implantation process forms halo implant regions that consume portions of the silicon germanium channel region and the semiconductor substrate. Finally, an in-situ doped epitaxial deposition process grows a pair of silicon germanium layers having LDD regions. The silicon germanium layers are adjacent to the silicon germanium channel region and the halo implant regions do not damage any portion of the silicon germanium layers.

Abstract: A process for forming defect-free source and drain extensions for a MOSFET built on a germanium based channel region deposits a first silicon germanium layer on a semiconductor substrate, deposits a gate dielectric layer on the silicon germanium layer, and deposits a gate electrode layer on the gate dielectric layer. A dry etch chemistry etches those layers to form a gate electrode, a gate dielectric, and a silicon germanium channel region on the semiconductor substrate. Next, an ion implantation process forms halo implant regions that consume portions of the silicon germanium channel region and the semiconductor substrate. Finally, an in-situ doped epitaxial deposition process grows a pair of silicon germanium layers having LDD regions. The silicon germanium layers are adjacent to the silicon germanium channel region and the halo implant regions do not damage any portion of the silicon germanium layers.