Abstract: The disclosure relates to apparatus for the deposition of epitaxial (semiconductor) layers by the vapor phase epitaxial growth technique wherein the carrousel for carrying substrate (semiconductor) slices onto which epitaxial deposition is to take place is arranged whereby, in accordance with the first embodiment, the slices are placed in compartments in the carrousel, the gases passing over the substrates in each of the compartments without then passing onto other compartments to prevent contamination between substrates and from the effluent gases provided after deposition on one of the substrates. This provides a decrease in cross-contamination and an increase in the packing density of substrates onto which epitaxial deposition is to take place.

Abstract: The disclosure relates to methods of producing light-emitting (LED) device quality gallium arsenide phosphide on germanium or silicon substrate wafers. In accordance with one embodiment of this disclosure, a germanium substrate is coated with silicon nitride (Si.sub.3 N.sub.4), boron nitride or silicon dioxide deposited by RF plasma which removes the pinholes which are found in silicon dioxide coatings deposited by standard techniques. The coatings should be of sufficient thickness, with few pinholes and high enough density to prevent passage of HCL gas therethrough and formation of germanium chloride (GeCl.sub.4) gas. The silicon nitride is removed from one surface of the substrate and 10 micron layer of gallium arsenide is deposited thereon. A layer of graded gallium arsenide phosphide is then deposited on the gallium arsenide phosphide as in the previous embodiments to provide the completed wafer having a germanium substrate.