Patents by Inventor Wim De Boer

Wim De Boer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7582875
    Abstract: A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.
    Type: Grant
    Filed: May 5, 2005
    Date of Patent: September 1, 2009
    Assignees: Universitaet Karlsruhe., Akademia Gomiczo-Hutnicza, Université Louis Pasteur, Centre National de la Recherche Scientifique, Institute of Electron Technology, Fondazione per Adroterapia Oncologica - Tera, Universite' de Geneve, Instytut Fizyki Jadrowej Im H Niewodniczanskiego
    Inventors: Massimo Caccia, Leopoldo Conte, Mario Alemi, Chiara Cappellini, Antonello Luigi Airoldi, Carla Bianchi, Raffaele Novario, Wim De Boer, Eugene Grigoriev, Halina Niemiec, Wojciech Kucewicz, Francesco Cannillo, Gilles Clauss, Claude Colledani, Grzegorz Deptuch, Wojciech Dulinski, Piotr Grabiec, Jacek Marczewski, Krzysztof Domanski, Bohdan Jaroszewicz, Krzysztof Kucharski, Laura Badano, Omella Ferrando, Georg Popowski, Agnieszka Zalewska, Adam Czermak
  • Patent number: 7274025
    Abstract: The invention relates to a detector, and to a method for the production thereof, for detecting a high-energy and high-intensity particle beam (2), which comprises a crystalline semi-conductor plate (3) having a metal coating (4) and which is arranged on a substrate (5), the semi-conductor plate (3) being a diamond plate (6), which is coated on both faces with metal structures (7, 8). The metal structures (7, 8) comprise aluminium and/or an aluminium alloy and form electrodes, which are arranged to be connected to various electrical potentials by way of conductor tracks (10) on the substrate (5), the substrate (5) being a ceramic plate (11) having a central orifice (24), which is covered by the diamond plate (6).
    Type: Grant
    Filed: January 23, 2003
    Date of Patent: September 25, 2007
    Assignee: Gesellschaft fuer Schwerionenforschung mbH
    Inventors: Elèni Berdermann, Wim De Boer
  • Publication number: 20060043313
    Abstract: A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.
    Type: Application
    Filed: May 5, 2005
    Publication date: March 2, 2006
    Inventors: Massimo Caccia, Leopoldo Conte, Mario Alemi, Chiara Cappellini, Antonello Airoldi, Carla Bianchi, Raffaele Novario, Wim De Boer, Eugene Grigoriev, Halina Niemiec, Wojciech Kucewicz, Francesco Cannillo, Gilles Clauss, Claude Colledani, Grzegorz Deptuch, Wojciech Dulinski, Piotr Grabiec, Jacek Marczewski, Krzysztof Domanski, Bohdan Jaroszewicz, Krzysztof Kucharski, Laura Badano, Omella Ferrando, Georg Popowski, Agnieszka Zalewska, Adam Czermak
  • Publication number: 20050116174
    Abstract: The invention relates to a detector, and to a method for the production thereof, for detecting a high-energy and high-intensity particle beam (2), which comprises a crystalline semi-conductor plate (3) having a metal coating (4) and which is arranged on a substrate (5), the semi-conductor plate (3) being a diamond plate (6), which is coated on both faces with metal structures (7, 8). The metal structures (7, 8) comprise aluminium and/or an aluminium alloy and form electrodes, which are arranged to be connected to various electrical potentials by way of conductor tracks (10) on the substrate (5), the substrate (5) being a ceramic plate (11) having a central orifice (24), which is covered by the diamond plate (6).
    Type: Application
    Filed: January 23, 2003
    Publication date: June 2, 2005
    Applicant: Gesellschaft fuer Schwerionenforschung mbH
    Inventors: Eleni Berdermann, Wim De Boer