Patents by Inventor Wing Chong Tony CHAU
Wing Chong Tony CHAU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128129Abstract: A method of detecting atomic scale defects in semiconductors, comprising the steps of scanning the surface of the semiconductor with a field emission scanning electron microscope (SEM) to form an SEM image thereof; scanning the SEM image with a light detector and monochromator to obtain a cathodoluminescence (CL) spatial intensity map of the SEM image; determining the CL spectra, i.e.Type: ApplicationFiled: October 5, 2023Publication date: April 18, 2024Applicant: THE UNIVERSITY OF HONG KONGInventors: Chi Chung Francis Ling, Sihua Li, Lok Ping Ho, Wing Chong Tony Chau
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Publication number: 20220416093Abstract: One embodiment provides a semiconductor device. The device comprises a substrate having a first face and a second face, a well region, a source region disposed in the well region, a contact region contacting the well region and the source region, a Schottky region, and a source metal layer. A first part of the source metal layer contacts the Schottky region to form a Schottky diode. The Schottky region is surrounded by the contact region and the well region in a first plane perpendicular to a direction from the first face toward the second face.Type: ApplicationFiled: September 6, 2022Publication date: December 29, 2022Inventors: Wing Kit CHEUNG, Wai Tien CHAN, Wing Chong Tony CHAU, Ho Nam LEE, Qian SUN
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Patent number: 11476370Abstract: One embodiment provides a semiconductor device. The device comprises a substrate having a first face and a second face, a well region, a source region disposed in the well region, a contact region contacting the well region and the source region, a Schottky region, and a source metal layer. A first part of the source metal layer contacts the Schottky region to form a Schottky diode. The Schottky region is surrounded by the contact region and the well region in a first plane perpendicular to a direction from the first face toward the second face.Type: GrantFiled: August 6, 2020Date of Patent: October 18, 2022Assignee: Alpha Power Solutions LimitedInventors: Wing Kit Cheung, Wai Tien Chan, Wing Chong Tony Chau, Ho Nam Lee, Qian Sun
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Publication number: 20220085217Abstract: A Schottky device includes a silicon carbide (SiC) substrate of a first conductivity type, a drift layer of the first conductivity type, a trench, a barrier layer of a second conductivity type, an electrically conductive material that at least partially fills the trench and contacts the barrier layer, a first electrode, and a second electrode. The drift layer is formed of SiC and is situated onto the SiC substrate. The trench extends from the top surface of the drift layer towards the SiC substrate. The barrier layer contacts the drifting layer and covers a sidewall and a bottom wall of the trench. The first electrode forms a Schottky junction with the drift layer and forms a low resistivity contact with the barrier layer and the electrically conductive material. The second electrode forms an ohmic contact with the SiC substrate.Type: ApplicationFiled: November 29, 2021Publication date: March 17, 2022Applicant: Alpha Power Solutions LimitedInventors: Wing Chong Tony CHAU, Wing Kit CHEUNG, Wai Tien CHAN
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Publication number: 20220045223Abstract: One embodiment provides a semiconductor device. The device comprises a substrate having a first face and a second face, a well region, a source region disposed in the well region, a contact region contacting the well region and the source region, a Schottky region, and a source metal layer. A first part of the source metal layer contacts the Schottky region to form a Schottky diode. The Schottky region is surrounded by the contact region and the well region in a first plane perpendicular to a direction from the first face toward the second face.Type: ApplicationFiled: August 6, 2020Publication date: February 10, 2022Inventors: Wing Kit CHEUNG, Wai Tien CHAN, Wing Chong Tony CHAU, Ho Nam LEE, Qian SUN
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Patent number: 11217707Abstract: A Schottky device includes a silicon carbide (SiC) substrate of a first conductivity type, a drift layer of the first conductivity type, a trench, a barrier layer of a second conductivity type, an electrically conductive material that at least partially fills the trench and contacts the barrier layer, a first electrode, and a second electrode. The drift layer is formed of SiC and is situated onto the SiC substrate. The trench extends from the top surface of the drift layer towards the SiC substrate. The barrier layer contacts the drifting layer and covers a sidewall and a bottom wall of the trench. The first electrode forms a Schottky junction with the drift layer and forms a low resistivity contact with the barrier layer and the electrically conductive material. The second electrode forms an ohmic contact with the SiC substrate.Type: GrantFiled: January 10, 2020Date of Patent: January 4, 2022Inventors: Wing Chong Tony Chau, Wing Kit Cheung, Wai Tien Chan
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Patent number: 10818495Abstract: An exemplary method of making a semiconductor device includes providing a semiconductor layer of a first conductivity type, providing a first hard mask on a surface of the semiconductor layer, patterning the first hard mask to obtain a patterned first hard mask to obtain an exposed surface of the semiconductor layer, forming a body region in the semiconductor layer by using the patterned first hard mask as mask, the body region being of a second conductivity type different from the first conductivity type, providing a second hard mask on the patterned first hard mask and the exposed surface of the semiconductor layer, patterning the second hard mask to obtain a patterned second hard mask, and forming a contact region and a sinker region by using the patterned first hard mask and the patterned second hard mask as mask.Type: GrantFiled: June 11, 2019Date of Patent: October 27, 2020Assignee: Alpha Power Solutions LimitedInventors: Wai Tien Chan, Wing Chong Tony Chau, Wing Kit Cheung
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Publication number: 20200152806Abstract: A Schottky device includes a silicon carbide (SiC) substrate of a first conductivity type, a drift layer of the first conductivity type, a trench, a barrier layer of a second conductivity type, an electrically conductive material that at least partially fills the trench and contacts the barrier layer, a first electrode, and a second electrode. The drift layer is formed of SiC and is situated onto the SiC substrate. The trench extends from the top surface of the drift layer towards the SiC substrate. The barrier layer contacts the drifting layer and covers a sidewall and a bottom wall of the trench. The first electrode forms a Schottky junction with the drift layer and forms a low resistivity contact with the barrier layer and the electrically conductive material. The second electrode forms an ohmic contact with the SiC substrate.Type: ApplicationFiled: January 10, 2020Publication date: May 14, 2020Applicant: Alpha Power Solutions LimitedInventors: Wing Chong Tony CHAU, Wing Kit CHEUNG, Wai Tien CHAN
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Patent number: 10586876Abstract: A Schottky device includes a silicon carbide (SiC) substrate of a first conductivity type, a drift layer of the first conductivity type, a trench, a barrier layer of a second conductivity type, an electrically conductive material that at least partially fills the trench and contacts the barrier layer, a first electrode, and a second electrode. The drift layer is formed of SiC and is situated onto the SiC substrate. The trench extends from the top surface of the drift layer towards the SiC substrate. The barrier layer contacts the drifting layer and covers a sidewall and a bottom wall of the trench. The first electrode forms a Schottky junction with the drift layer and forms a low resistivity contact with the barrier layer and the electrically conductive material. The second electrode forms an ohmic contact with the SiC substrate.Type: GrantFiled: September 14, 2017Date of Patent: March 10, 2020Assignee: Alpha Power Solutions LimitedInventors: Wing Chong Tony Chau, Wing Kit Cheung, Wai Tien Chan
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Publication number: 20200020533Abstract: An exemplary method of making a semiconductor device includes providing a semiconductor layer of a first conductivity type, providing a first hard mask on a surface of the semiconductor layer, patterning the first hard mask to obtain a patterned first hard mask to obtain an exposed surface of the semiconductor layer, forming a body region in the semiconductor layer by using the patterned first hard mask as mask, the body region being of a second conductivity type different from the first conductivity type, providing a second hard mask on the patterned first hard mask and the exposed surface of the semiconductor layer, patterning the second hard mask to obtain a patterned second hard mask, and forming a contact region and a sinker region by using the patterned first hard mask and the patterned second hard mask as mask.Type: ApplicationFiled: June 11, 2019Publication date: January 16, 2020Applicant: Alpha Power Solutions LimitedInventors: Wai Tien CHAN, Wing Chong Tony CHAU, Wing Kit CHEUNG
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Publication number: 20190081184Abstract: A Schottky device includes a silicon carbide (SiC) substrate of a first conductivity type, a drift layer of the first conductivity type, a trench, a barrier layer of a second conductivity type, an electrically conductive material that at least partially fills the trench and contacts the barrier layer, a first electrode, and a second electrode. The drift layer is formed of SiC and is situated onto the SiC substrate. The trench extends from the top surface of the drift layer towards the SiC substrate. The barrier layer contacts the drifting layer and covers a sidewall and a bottom wall of the trench. The first electrode forms a Schottky junction with the drift layer and forms a low resistivity contact with the barrier layer and the electrically conductive material. The second electrode forms an ohmic contact with the SiC substrate.Type: ApplicationFiled: September 14, 2017Publication date: March 14, 2019Inventors: Wing Chong Tony CHAU, Wing Kit CHEUNG, Wai Tien CHAN