Abstract: Disclosed is apparatus for atomic layer deposition including a frame, an injector head with longitudinal slots supplying gases to deposition spaces confined by the longitudinal slots and a substrate. The slots are transverse to a movement in a first direction of the substrate, a subframe suspending the injector head; a movable carrier supporting the substrate for movement in the first direction; and gas pads at the subframe outside the injector head between the subframe and the moveable carrier, bearing the subframe on the carrier for the movement in the first direction. Actuators suspend the injector head from the subframe, and a control device connected to the actuators controls the actuators to adjust a working distance between a reference plane of the injector head and the surface of the substrate corresponding to a predetermined distance and to adjust an orientation of the injector head corresponding to an orientation of the substrate.

Abstract: A device for heating a substrate according to a predetermined temperature profile for crystallizing a material on the substrate includes: a housing, at least a process chamber situated inside the housing and provided with a first and second opening for passing through a substrate, an inlet for introducing a process gas which includes the material in vapor phase into the chamber, at least two transport rollers attached to the housing for transporting the substrate into the chamber. The device further includes passage spaces for preventing the escape of process gas from the chamber to a space between the chamber and housing, which are situated near respective ends of the transport rollers in the chamber, the respective passage spaces having a first passage opening on an inner wall of the chamber, a second passage opening on an outer wall of the chamber and a first flange fixed around the transport roller.

Abstract: Disclosed is apparatus for atomic layer deposition including a frame, an injector head with longitudinal slots supplying gases to deposition spaces confined by the longitudinal slots and a substrate. The slots are transverse to a movement in a first direction of the substrate, a subframe suspending the injector head; a movable carrier supporting the substrate for movement in the first direction; and gas pads at the subframe outside the injector head between the subframe and the moveable carrier, bearing the subframe on the carrier for the movement in the first direction. Actuators suspend the injector head from the subframe, and a control device connected to the actuators controls the actuators to adjust a working distance between a reference plane of the injector head and the surface of the substrate corresponding to a predetermined distance and to adjust an orientation of the injector head corresponding to an orientation of the substrate.

Abstract: A device for heating a substrate according to a predetermined temperature profile for crystallizing a material on the substrate includes: a housing, at least a process chamber situated inside the housing and provided with a first and second opening for passing through a substrate, an inlet for introducing a process gas which includes the material in vapour phase into the chamber, at least two transport rollers attached to the housing for transporting the substrate into the chamber. The device further includes passage spaces for preventing the escape of process gas from the chamber to a space between the chamber and housing, which are situated near respective ends of the transport rollers in the chamber, the respective passage spaces having a first passage opening on an inner wall of the chamber, a second passage opening on an outer wall of the chamber and a first flange fixed around the transport roller.