Patents by Inventor Witold J. Malkowski

Witold J. Malkowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080128913
    Abstract: In one embodiment, the disclosure relates to a method for forming a semiconductor power device by depositing a first layer of TiW on a gate region and a source region, depositing a second layer of refractory metal over the first layer of TiW at the gate region, depositing a dielectric stack over the second layer of refractory metal and a portion of the first layer of TiW, depositing an etch stop layer over a portion of the dielectric stack, depositing an interconnect layer over the etch stop layer and the dielectric stack and depositing an etch mask over the interconnect layer.
    Type: Application
    Filed: October 25, 2007
    Publication date: June 5, 2008
    Applicant: Northrop Grumman Systems Corporation
    Inventors: Li-Shu Chen, Philip C. Smith, Steven M. Buchoff, Joel Frederick Rosenbaum, Joel Barry Schneider, Witold J. Malkowski